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Register a new userDensity of States Analysis of Electrostatic Confinement in Gapped Graphene
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We investigate the electrostatic confinement of charge carriers in a gapped graphene quantum dot in the presence of a magnetic flux. The circular quantum dot is defined by an electrostatic gate potential delimited in an infinite graphene sheet which is then connected to a two terminal setup. Considering different regions composing our system, we explicitly determine the solutions of the energy spectrum in terms of Hankel functions. Using the scattering matrix together with the asymptotic behavior of the Hankel functions for large arguments, we calculate the density of states and show that it has an oscillatory behavior with the appearance of resonant peaks. It is found that the energy gap can controls the amplitude and width of these resonances and affect their location in the density of states profile.
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We study a gapped graphene monolayer in a combination of uniform magnetic field and strain-induced uniform pseudomagnetic field. The presence of two fields completely removes the valley degeneracy. The resulting density of states shows a complicated behaviour that can be tuned by adjusting the strength of the fields. We analyze how these features can be observed in the sublattice, valley and full density of states. The analytical expression for the valley DOS is derived.
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We consider confinement of Dirac fermions in $AB$-stacked bilayer graphene by inhomogeneous on-site interactions, (pseudo-)magnetic field or inter-layer interaction. Working within the framework of four-band approximation, we focus on the systems where the stationary equation is reducible into two stationary equations with $2times2$ Dirac-type Hamiltonians and auxiliary interactions. We show that it is possible to find localized states by solving an effective Schrodinger equation with energy-dependent potential. We consider several scenarios where bilayer graphene is subject to inhomogneous (pseudo-)magnetic field, on-site interactions or inter-layer coupling. In explicit examples, we provide analytical solutions for the states localized by local fluctuations or periodicity defects of the interactions.
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