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We consider magic-angle twisted bilayer graphene (TBG) at filling $ u=+3$, where experiments have observed a robust quantized anomalous Hall effect. This has been attributed to the formation of a valley- and spin-polarized Chern insulating ground state that spontaneously breaks time-reversal symmetry, and is stabilized by a hexagonal boron nitride (hBN) substrate. We identify three different types of domain wall, and study their properties and energetic selection mechanisms via theoretical arguments and Hartree-Fock calculations adapted to deal with inhomogeneous moire systems. We comment on the implications of these results for transport and scanning probe experiments.
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The recently observed superconductivity in twisted bilayer graphene emerges from insulating states believed to arise from electronic correlations. While there have been many proposals to explain the insulating behaviour, the commensurability at which these states appear suggests that they are Mott insulators. Here we focus on the insulating states with $pm 2$ electrons or holes with respect to the charge neutrality point. We show that the theoretical expectations for the Mott insulating states are not compatible with the experimentally observed dependence on temperature and magnetic field if, as frequently assumed, only the correlations between electrons on the same site are included. We argue that the inclusion of non-local (inter-site) correlations in the treatment of the Hubbard model can bring the predictions for the magnetic and temperature dependencies of the Mott transition to an agreement with experiments and have consequences for the critical interactions, the size of the gap, and possible pseudogap physics. The importance of the inter-site correlations to explain the experimental observations indicates that the observed insulating gap is not the one between the Hubbard bands and that antiferromagnetic-like correlations play a key role in the Mott transition.
Magic-angle twisted bilayer graphene (MATBG) exhibits a range of correlated phenomena that originate from strong electron-electron interactions. These interactions make the Fermi surface highly susceptible to reconstruction when $ pm 1, pm 2, pm 3$ electrons occupy each moir e unit cell and lead to the formation of correlated insulating, superconducting and ferromagnetic phases. While some phases have been shown to carry a non-zero Chern number, the local microscopic properties and topological character of many other phases remain elusive. Here we introduce a set of novel techniques hinging on scanning tunneling microscopy (STM) to map out topological phases in MATBG that emerge in finite magnetic field. By following the evolution of the local density of states (LDOS) at the Fermi level with electrostatic doping and magnetic field, we visualize a local Landau fan diagram that enables us to directly assign Chern numbers to all observed phases. We uncover the existence of six topological phases emanating from integer fillings in finite fields and whose origin relates to a cascade of symmetry-breaking transitions driven by correlations. The spatially resolved and electron-density-tuned LDOS maps further reveal that these topological phases can form only in a small range of twist angles around the magic-angle value. Both the microscopic origin and extreme sensitivity to twist angle differentiate these topological phases from the Landau levels observed near charge neutrality. Moreover, we observe that even the charge-neutrality Landau spectrum taken at low fields is considerably modified by interactions and exhibits an unexpected splitting between zero Landau levels that can be as large as ${sim },3-5$ meV. Our results show how strong electronic interactions affect the band structure of MATBG and lead to the formation of correlation-enabled topological phases.
The experimentally observed correlated insulating states and quantum anomalous Hall (QAH) effect in twisted bilayer graphene (TBG) have drawn significant attention. However, up to date, the specific mechanisms of these intriguing phenomena are still open questions. Using a fully unrestricted Hartree-Fock variational method, we have explained the correlated insulating states and QAH effects at various integer fillings of the flat bands in TBG. Our results indicate that states breaking flavor (valley and spin) symmetries are energetically favored at all integer fillings. In particular, the correlated insulating states at $pm 1/2$ filling and at the charge neutrality point are all valley polarized sates which break $C_{2z}$ and time-reversal ($mathcal{T}$) symmetries, but preserves $C_{2z}mathcal{T}$ symmetry. Such valley polarized states exhibit moire orbital antiferromagnetic ordering on an emergent honeycomb lattice with compensating circulating current pattern in the moire supercell. Within the same theoretical framework, our calculations indicate that the $C!=!mp 1$ QAH states at $pm 3/4$ fillings of the magic-angle TBG are spin and orbital ferromagnetic states, which emerge when a staggered sublattice potential is present. We find that the nonlocalness of the exchange interactions tend to enhance the bandwidth of the low-energy bands due to the exchange-hole effect, which reduces the gaps of the correlated insulator phases. The nonlocal exchange interactions also dramatically enhance the spin polarization of the system, which significantly stabilize the orbital and spin ferromagnetic QAH state at $3/4$ filling of TBG aligned with hexagonal boron nitride (hBN). We also predict that, by virtue of the orbital ferromagnetic nature, the QAH effects at electron and hole fillings of hBN-aligned TBG would exhibit hysteresis loops with opposite chiralities.
Twisting two layers into a magic angle (MA) of ~1.1{deg} is found essential to create low energy flat bands and the resulting correlated insulating, superconducting, and magnetic phases in twisted bilayer graphene (TBG). While most of previous works focus on revealing these emergent states in MA-TBG, a study of the twist angle dependence, which helps to map an evolution of these phases, is yet less explored. Here, we report a magneto-transport study on one non-magic angle TBG device, whose twist angle {theta} changes from 1.25{deg} at one end to 1.43{deg} at the other. For {theta}=1.25{deg}, we observe an emergence of topological insulating states at hole side with a sequence of Chern number |C|=4-|v|, where v is the number of electrons (holes) in moire unite cell. When {theta}>1.25{deg}, the Chern insulator from flat band disappears and evolves into fractal Hofstadter butterfly quantum Hall insulator where magnetic flux in one moire unite cell matters. Our observations will stimulate further theoretical and experimental investigations on the relationship between electron interactions and non-trivial band topology.
Recently twisted bilayer graphene (t-BLG) emerges as a new strongly correlated physical platform near a magic twist angle, which hosts many exciting phenomena such as the Mott-like insulating phases, unconventional superconducting behavior and emergent ferromagnetism. Besides the apparent significance of band flatness, band topology may be another critical element in determining strongly correlated twistronics yet receives much less attention. Here we report compelling evidence for nontrivial noninteracting band topology of t-BLG moire Dirac bands through a systematic nonlocal transport study, in conjunction with an examination rooted in $K$-theory. The moire band topology of t-BLG manifests itself as two pronounced nonlocal responses in the electron and hole superlattice gaps. We further show that the nonlocal responses are robust to the interlayer electric field, twist angle, and edge termination, exhibiting a universal scaling law. While an unusual symmetry of t-BLG trivializes Berry curvature, we elucidate that two $Z_2$ invariants characterize the topology of the moire Dirac bands, validating the topological edge origin of the observed nonlocal responses. Our findings not only provide a new perspective for understanding the emerging strongly correlated phenomena in twisted van der Waals heterostructures, but also suggest a potential strategy to achieve topologically nontrivial metamaterials from topologically trivial quantum materials based on twist engineering.
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