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Register a new userHysteretic magnetoresistance in nanowire devices due to stray fields induced by micromagnets
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We study hysteretic magnetoresistance in InSb nanowires due to stray magnetic fields from CoFe micromagnets. Devices without any ferromagnetic components show that the magnetoresistance of InSb nanowires commonly exhibits either a local maximum or local minimum at zero magnetic field. Switching of microstrip magnetizations then results in positive or negative hysteretic dependence as conductance maxima or minima shift with respect to the global external field. Stray fields are found to be in the range of tens of millitesla, comparable to the scale over which the nanowire magnetoresistance develops. We observe that the stray field signal is similar to that obtained in devices with ferromagnetic contacts (spin valves). We perform micromagnetic simulations which are in reasonable agreement with the experiment. The use of locally varying magnetic fields may bring new ideas for Majorana circuits in which nanowire networks require control over field orientation at the nanoscale.
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We report the observation of sharp suppression of superconductivity-induced zero-bias conductance peaks at low magnetic fields in InSb nanowire Josephson quantum dot devices. With multiple gates, the quantum dot devices can be tuned to the Kondo-superconductivity interplaying regime, in which Kondo-enhanced superconductivity manifests as a zero-bias conductance peak. In weak magnetic fields, the zero-bias conductance peak is found to exhibit an unusual negative magnetoresistance when the Kondo temperature is comparable to the superconductor gap. The observation could not be explained by magnetic field induced 0-$pi$ phase transition, topological phase transition, or other known mechanisms, but may arise from correlation induced interference when Cooper pairs cotunnel through the quantum dots.
We find that stray infrared light from the 4 K stage in a cryostat can cause significant loss in superconducting resonators and qubits. For devices shielded in only a metal box, we measured resonators with quality factors Q = 10^5 and qubits with energy relaxation times T_1=120 ns, consistent with a stray light-induced quasiparticle density of 170-230 mu m^{-3}. By adding a second black shield at the sample temperature, we found about an order of magnitude improvement in performance and no sensitivity to the 4 K radiation. We also tested various shielding methods, implying a lower limit of Q = 10^8 due to stray light in the light-tight configuration.
Majorana modes are zero-energy excitations of a topological superconductor that exhibit non-Abelian statistics. Following proposals for their detection in a semiconductor nanowire coupled to an s-wave superconductor, several tunneling experiments reported characteristic Majorana signatures. Reducing disorder has been a prime challenge for these experiments because disorder can mimic the zero-energy signatures of Majoranas, and renders the topological properties inaccessible. Here, we show characteristic Majorana signatures in InSb nanowire devices exhibiting clear ballistic transport properties. Application of a magnetic field and spatial control of carrier density using local gates generates a zero bias peak that is rigid over a large region in the parameter space of chemical potential, Zeeman energy, and tunnel barrier potential. The reduction of disorder allows us to resolve separate regions in the parameter space with and without a zero bias peak, indicating topologically distinct phases. These observations are consistent with the Majorana theory in a ballistic system, and exclude for the first time the known alternative explanations that invoke disorder or a nonuniform chemical potential.
We investigate the influence of gauge fields induced by strain on the supercurrent passing through the graphene-based Josephson junctions. We show in the presence of a constant pseudomagnetic field ${bf B}_S$ originated from an arc-shape elastic deformation, the Josephson current is monotonically enhanced. This is in contrast with the oscillatory behavior of supercurrent (known as Fraunhofer pattern) caused by real magnetic fields passing through the junction. The absence of oscillatory supercurrent originates from the fact that strain-induced gauge fields have opposite directions at the two valleys due to the time-reversal symmetry. Subsequently there is no net Aharonov-Bohm effect due to ${bf B}_S$ in the current carried by the bound states composed of electrons and holes from different valleys. On the other hand, when both magnetic and pseudomagnetic fields are present, Fraunhofer-like oscillations as function of the real magnetic field flux are found. We find that the Fraunhofer pattern and in particular its period slightly change by varying the strain-induced gauge field as well as the geometric aspect ratio of the junction. Intriguingly, the combination of two kinds of gauge fields results in two special fingerprint in the local current density profile: (i) strong localization of the Josephson current density with more intense maximum amplitudes; (ii) appearance of the inflated vortex cores - finite regions with almost diminishing Josephson currents - which their sizes increases by increasing ${bf B}_S$. These findings reveal unexpected interference signatures of strain-induced gauge fields in graphene SNS junctions and provide unique tools for sensitive probing of the pseudomagnetic fields.
We demonstrate the existence of Giant proximity magnetoresistance (PMR) effect in a graphene spin valve where spin polarization is induced by a nearby magnetic insulator. PMR calculations were performed for yttrium iron garnet (YIG), cobalt ferrite (CFO), and two europium chalcogenides EuO and EuS. We find a significant PMR (up to 100%) values defined as a relative change of graphene conductance with respect to parallel and antiparallel alignment of two proximity induced magnetic regions within graphene. Namely, for high Curie temperature (Tc) CFO and YIG insulators which are particularly important for applications, we obtain 22% and 77% at room temperature, respectively. For low Tc chalcogenides, EuO and EuS, the PMR is 100% in both cases. Furthermore, the PMR is robust with respect to system dimensions and edge type termination. Our findings show that it is possible to induce spin polarized currents in graphene with no direct injection through magnetic materials.
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