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Register a new userInverse Layer Dependence of Friction on Chemically Doped MoS_{2}
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We present the results of atomic-force-microscopy-based friction measurements on Re-doped molybdenum disulfide (MoS2). In stark contrast to the seemingly universal observation of decreasing friction with increasing number of layers on two-dimensional (2D) materials, friction on Re-doped MoS2 exhibits an anomalous, i.e. inverse dependency on the number of layers. Raman spectroscopy measurements revealed signatures of Re intercalation, leading to a decoupling between neighboring MoS2 layers and enhanced electron-phonon interactions, thus resulting in increasing friction with increasing number of layers: a new paradigm in the mechanics of 2D materials.
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Advances in synthesis techniques and materials understanding have given rise to oxide heterostructures with intriguing physical phenomena that cannot be found in their constituents. In these structures, precise control of interface quality, including oxygen stoichiometry, is critical for unambiguous tailoring of the interfacial properties, with deposition of the first monolayer being the most important step in shaping a well-defined functional interface. Here, we studied interface formation and strain evolution during the initial growth of LaAlO3 on SrTiO3 by pulsed laser deposition, in search of a means for controlling the atomic-sharpness of the interfaces. Our experimental results show that growth of LaAlO3 at a high oxygen pressure dramatically enhances interface abruptness. As a consequence, the critical thickness for strain relaxation was increased, facilitating coherent epitaxy of perovskite oxides. This provides a clear understanding of the role of oxygen pressure during the interface formation, and enables the synthesis of oxide heterostructures with chemically-sharper interfaces.
In this work, we demonstrate scaled back-end-of-line (BEOL) compatible indium oxide (In2O3) transistors by atomic layer deposition (ALD) with channel thickness (Tch) of 1.0-1.5 nm, channel length (Lch) down to 40 nm, and equivalent oxide thickness (EOT) of 2.1 nm, with record high drain current of 2.0 A/mm at VDS of 0.7 V among all oxide semiconductors. Enhancement-mode In2O3 transistors with ID over 1.0 A/mm at VDS of 1 V are also achieved by controlling the channel thickness down to 1.0 nm at atomic layer scale. Such high current density in a relatively low mobility amorphous oxide semiconductor is understood by the formation of high density 2D channel beyond 4E13 /cm2 at HfO2/In2O3 oxide/oxide interface.
Strong light-matter interactions in layered transition metal dichalcogenides (TMDs) open up vivid possibilities for novel exciton-based devices. The optical properties of TMDs are dominated mostly by the tightly bound excitons and more complex quasiparticles, the biexcitons. Instead of physically exfoliated monolayers, the solvent-mediated chemical exfoliation of these 2D crystals is a cost-effective, large-scale production method suitable for real device applications. We explore the ultrafast excitonic processes in WS$_{2}$ dispersion using broadband femtosecond pump-probe spectroscopy at room temperature. We detect the biexcitons experimentally and calculate their binding energies, in excellent agreement with earlier theoretical predictions. Using many-body physics, we show that the excitons act like Weiner-Mott excitons and explain the origin of excitons via first-principles calculations. Our detailed time-resolved investigation provides ultrafast radiative and non-radiative lifetimes of excitons and biexcitons in WS$_{2}$. Indeed, our results demonstrate the potential for excitonic quasiparticle-controlled TMDs-based devices operating at room temperature.
We present a transient absorption setup combining broadband detection over the visible-UV range with high temporal resolution ($sim$20fs) which is ideally suited to trigger and detect vibrational coherences in different classes of materials. We generate and detect coherent phonons (CPs) in single layer (1L) MoS$_2$, as a representative semiconducting 1L-transition metal dichalcogenide (TMD), where the confined dynamical interaction between excitons and phonons is unexplored. The coherent oscillatory motion of the out-of-plane $A_{1}$ phonons, triggered by the ultrashort laser pulses, dynamically modulates the excitonic resonances on a timescale of few tens fs. We observe an enhancement by almost two orders of magnitude of the CP amplitude when detected in resonance with the C exciton peak, combined with a resonant enhancement of CP generation efficiency. Ab initio calculations of the change in 1L-MoS$_2$ band structure induced by the $A_{1}$ phonon displacement confirm a strong coupling with the C exciton. The resonant behavior of the CP amplitude follows the same spectral profile of the calculated Raman susceptibility tensor. This demonstrates that CP excitation in 1L-MoS$_2$ can be described as a Raman-like scattering process. These results explain the CP generation process in 1L-TMDs, paving the way for coherent all-optical control of excitons in layered materials in the THz frequency range.
Chemically and mechanically exfoliated MoS$_2$ single-layer samples have substantially different properties. While mechanically exfoliated single-layers are mono-phase (1H polytype with Mo in trigonal prismatic coordination), the chemically exfoliated samples show coexistence of three different phases, 1H, 1T (Mo in octahedral coordination) and 1T$^{}$ (a distorted $2times 1$ 1T-superstructure). By using first-principles calculations, we investigate the energetics and the dynamical stability of the three phases. We show that the 1H phase is the most stable one, while the metallic 1T phase, strongly unstable, undergoes a phase transition towards a metastable and insulating 1T$^{}$ structure composed of separated zig-zag chains. We calculate electronic structure, phonon dispersion, Raman frequencies and intensities for the 1T$^{}$ structure. We provide a microscopical description of the J$_1$, J$_2$ and J$_3$ Raman features first detected more then $20$ years ago, but unexplained up to now. Finally, we show that H adsorbates, that are naturally present at the end of the chemical exfoliation process, stabilize the 1T$^{prime}$ over the 1H one.
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