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Register a new userBroadband pump-probe study of biexcitons in chemically exfoliated layered WS$_{2}$
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Strong light-matter interactions in layered transition metal dichalcogenides (TMDs) open up vivid possibilities for novel exciton-based devices. The optical properties of TMDs are dominated mostly by the tightly bound excitons and more complex quasiparticles, the biexcitons. Instead of physically exfoliated monolayers, the solvent-mediated chemical exfoliation of these 2D crystals is a cost-effective, large-scale production method suitable for real device applications. We explore the ultrafast excitonic processes in WS$_{2}$ dispersion using broadband femtosecond pump-probe spectroscopy at room temperature. We detect the biexcitons experimentally and calculate their binding energies, in excellent agreement with earlier theoretical predictions. Using many-body physics, we show that the excitons act like Weiner-Mott excitons and explain the origin of excitons via first-principles calculations. Our detailed time-resolved investigation provides ultrafast radiative and non-radiative lifetimes of excitons and biexcitons in WS$_{2}$. Indeed, our results demonstrate the potential for excitonic quasiparticle-controlled TMDs-based devices operating at room temperature.
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Behaving like atomically-precise two-dimensional quantum wells with non-negligible dielectric contrast, the layered HOIPs have strong electronic interactions leading to tightly bound excitons with binding energies on the order of 500 meV. These strong interactions suggest the possibility of larger excitonic complexes like trions and biexcitons, which are hard to study numerically due to the complexity of the layered HOIPs. Here, we propose and parameterize a model Hamiltonian for excitonic complexes in layered HOIPs and we study the correlated eigenfunctions of trions and biexcitons using a combination of diffusion Monte Carlo and very large variational calculations with explicitly correlated Gaussian basis functions. Binding energies and spatial structures of these complexes are presented as a function of the layer thickness. The trion and biexciton of the thinnest layered HOIP have binding energies of 35 meV and 44 meV, respectively, whereas a single exfoliated layer is predicted to have trions and biexcitons with equal binding enegies of 48 meV. We compare our findings to available experimental data and to that of other quasi-two-dimensional materials.
Chemically and mechanically exfoliated MoS$_2$ single-layer samples have substantially different properties. While mechanically exfoliated single-layers are mono-phase (1H polytype with Mo in trigonal prismatic coordination), the chemically exfoliated samples show coexistence of three different phases, 1H, 1T (Mo in octahedral coordination) and 1T$^{}$ (a distorted $2times 1$ 1T-superstructure). By using first-principles calculations, we investigate the energetics and the dynamical stability of the three phases. We show that the 1H phase is the most stable one, while the metallic 1T phase, strongly unstable, undergoes a phase transition towards a metastable and insulating 1T$^{}$ structure composed of separated zig-zag chains. We calculate electronic structure, phonon dispersion, Raman frequencies and intensities for the 1T$^{}$ structure. We provide a microscopical description of the J$_1$, J$_2$ and J$_3$ Raman features first detected more then $20$ years ago, but unexplained up to now. Finally, we show that H adsorbates, that are naturally present at the end of the chemical exfoliation process, stabilize the 1T$^{prime}$ over the 1H one.
Van der Waals heterostructures consisting of graphene and transition metal dichalcogenides (TMDCs) have recently shown great promise for high-performance optoelectronic applications. However, an in-depth understanding of the critical processes for device operation, namely interfacial charge transfer (CT) and recombination, has so far remained elusive. Here, we investigate these processes in graphene-WS$_2$ heterostructures, by complementarily probing the ultrafast terahertz photoconductivity in graphene and the transient absorption dynamics in WS$_2$ following photoexcitation. We find that CT across graphene-WS$_2$ interfaces occurs via photo-thermionic emission for sub-A-exciton excitation, and direct hole transfer from WS$_2$ to the valence band of graphene for above-A-exciton excitation. Remarkably, we observe that separated charges in the heterostructure following CT live extremely long: beyond 1 ns, in contrast to ~1 ps charge separation reported in previous studies. This leads to efficient photogating of graphene. These findings provide relevant insights to optimize further the performance of optoelectronic devices, in particular photodetection.
Single layers of transition metal dichalcogenides (TMDs) are direct gap semiconductors with nondegenerate valley indices. An intriguing possibility for these materials is the use of their valley index as an alternate state variable. Several limitations to such a utility include strong, phonon-enabled intervalley scattering, as well as multiparticle interactions leading to multiple emission channels. We prepare single-layer WS$_{2}$ such that the photoluminescence is from either the neutral or charged exciton (trion). After excitation with circularly polarized light, the neutral exciton emission has zero polarization, however, the trion emission has a large polarization (28%) at room temperature. The trion emission also has a unique, non-monotonic temperature dependence that we show is a consequence of the multiparticle nature of the trion. This temperature dependence enables us to determine that coulomb assisted intervalley scattering, electron-hole radiative recombination, and a 3-particle Auger process are the dominant mechanisms at work in this system. Because this dependence involves trion systems, one can use gate voltages to modulate the polarization (or intensity) emitted from TMD structures.
We present the results of atomic-force-microscopy-based friction measurements on Re-doped molybdenum disulfide (MoS2). In stark contrast to the seemingly universal observation of decreasing friction with increasing number of layers on two-dimensional (2D) materials, friction on Re-doped MoS2 exhibits an anomalous, i.e. inverse dependency on the number of layers. Raman spectroscopy measurements revealed signatures of Re intercalation, leading to a decoupling between neighboring MoS2 layers and enhanced electron-phonon interactions, thus resulting in increasing friction with increasing number of layers: a new paradigm in the mechanics of 2D materials.
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