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Register a new userQuantum paraelectric varactors for radio-frequency measurements at mK temperatures
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Radio-frequency reflectometry allows for fast and sensitive electrical readout of charge and spin qubits hosted in quantum dot devices coupled to resonant circuits. Optimizing readout, however, requires frequency tuning of the resonators and impedance matching. This is difficult to achieve using conventional semiconductor or ferroelectric-based varactors in the detection circuit as their performance degrades significantly in the mK temperature range relevant for solid-state quantum devices. Here we explore a different type of material, strontium titanate, a quantum paraelectric with exceptionally large field-tunable permittivity at low temperatures. Using strontium titanate varactors we demonstrate perfect impedance matching and resonator frequency tuning at 6 mK and characterize the varactors at this temperature in terms of their capacitance tunability, dissipative losses and magnetic field sensitivity. We show that this allows us to optimize the radio-frequency readout signal-to-noise ratio of carbon nanotube quantum dot devices to achieve a charge sensitivity of 4.8 $mu$e/Hz$^{1/2}$ and capacitance sensitivity of 0.04 aF/Hz$^{1/2}$.
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Unwanted fluctuations over time, in short, noise, are detrimental to device performance, especially for quantum coherent circuits. Recent efforts have demonstrated routes to utilizing magnon systems for quantum technologies, which are based on interfacing single magnons to superconducting qubits. However, the coupling of several components often introduces additional noise to the system, degrading its coherence. Researching the temporal behavior can help to identify the underlying noise sources, which is a vital step in increasing coherence times and the hybrid device performance. Yet, the frequency noise of the ferromagnetic resonance (FMR) has so far been unexplored. Here, we investigate such FMR frequency fluctuations of a YIG sphere down to mK-temperatures, and find them independent of temperature and drive power. This suggests that the measured frequency noise in YIG is dominated by so far undetermined noise sources, which properties are not consistent with the conventional model of two-level systems, despite their effect on the sample linewidth. Moreover, the functional form of the FMR frequency noise power spectral density (PSD) cannot be described by a simple power law. By employing time-series analysis, we find a closed function for the PSD that fits our observations. Our results underline the necessity of coherence improvements to magnon systems for useful applications in quantum magnonics.
RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two methods for mitigating the effect of the parasitic capacitance, one by on-chip modifications and a second by off-chip changes. We demonstrate that these methods enable high-performance charge readout in Si/SiGe quantum dots, achieving a fidelity of 99.9% for a measurement time of 1 $mu$s.
Spin qubits in silicon quantum dots offer a promising platform for a quantum computer as they have a long coherence time and scalability. The charge sensing technique plays an essential role in reading out the spin qubit as well as tuning the device parameters and therefore its performance in terms of measurement bandwidth and sensitivity is an important factor in spin qubit experiments. Here we demonstrate fast and sensitive charge sensing by a radio-frequency reflectometry of an undoped, accumulation-mode Si/SiGe double quantum dot. We show that the large parasitic capacitance in typical accumulation-mode gate geometries impedes reflectometry measurements. We present a gate geometry that significantly reduces the parasitic capacitance and enables fast single-shot readout. The technique allows us to distinguish between the singly- and doubly-occupied two-electron states under the Pauli spin blockade condition in an integration time of 0.8 {mu}s, the shortest value ever reported in silicon, by the signal-to-noise ratio of 6. These results provide a guideline for designing silicon spin qubit devices suitable for the fast and high-fidelity readout.
Transport experiments in high mobility (110) GaAs heterostructures have been performed at very low temperatures 8 mK. At higher Landau-Levels we observe a transport anisotropy that bears some similarity with what is already seen at half-odd-integer filling on (001) oriented substrates. In addition we report the first observation of transport anisotropies within the lowest Landau-Level. This remarkable new anisotropy is independent of the current direction and depends on the polarity of the magnetic field.
Continuing advancements in quantum information processing have caused a paradigm shift from research mainly focused on testing the reality of quantum mechanics to engineering qubit devices with numbers required for practical quantum computation. One of the major challenges in scaling toward large-scale solid-state systems is the limited input/output (I/O) connectors present in cryostats operating at sub-kelvin temperatures required to execute quantum logic with high-fidelity. This interconnect bottleneck is equally present in the device fabrication-measurement cycle, which requires high-throughput and cryogenic characterization to develop quantum processors. Here we multiplex quantum transport of two-dimensional electron gases at sub-kelvin temperatures. We use commercial off-the-shelf CMOS multiplexers to achieve an order of magnitude increase in the number of wires. Exploiting this technology we advance 300 mm epitaxial wafers manufactured in an industrial CMOS fab to a record electron mobility of (3.9$pm$0.6)$times$10$^5$ cm$^2$slash Vs and percolation density of (6.9$pm$0.4)$times$10$^{10}$ cm$^{-2}$, representing a key step toward large silicon qubit arrays. We envision that the demonstration will inspire the development of cryogenic electronics for quantum information and because of the simplicity of assembly, low-cost, yet versatility, we foresee widespread use of similar cryo-CMOS circuits for high-throughput quantum measurements and control of quantum engineered systems.
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