No Arabic abstract
The two-dimensional layered compound PdCoO$_2$ is one of the best oxide conductors, providing an intriguing research arena opened by the long mean free path and the very high mobility of ~51000 cm2/Vs. These properties turn PdCoO$_2$ into a candidate material for nanoscale quantum devices. By exploring universal conductance fluctuations originating at nanoscale PdCoO$_2$ Hall-bar devices, we determined the phase coherence length of electron transport in c-axis oriented PdCoO$_2$ thin films to equal ~100 nm. The weak temperature dependence of the measured phase coherence length suggests that defect scattering at twin boundaries in the PdCoO$_2$ thin film governs phase breaking. These results suggest that phase coherent devices can be achieved by realizing the devices smaller than the size of twin domains, via refined microfabrication and suppression of twin boundaries.
The large ($10^2 - 10^5$) and strongly temperature dependent resistive anisotropy $eta = (sigma_{ab}/sigma_c)^{1/2}$ of cuprates perhaps holds the key to understanding their normal state in-plane $sigma_{ab}$ and out-of-plane $sigma_{c}$ conductivities. It can be shown that $eta$ is determined by the ratio of the phase coherence lengths $ell_i$ in the respective directions: $sigma_{ab}/sigma_c = ell_{ab}^2/ell_{c}^2$. In layered crystals in which the out-of-plane transport is incoherent, $ell_{c}$ is fixed, equal to the interlayer spacing. As a result, the T-dependence of $eta$ is determined by that of $ell_{ab}$, and vice versa, the in-plane phase coherence length can be obtained directly by measuring the resistive anisotropy. We present data for hole-doped $YBa_2Cu_3O_y$ ($6.3 < y < 6.9$) and $Y_{1-x}Pr_xBa_2Cu_3O_{7-delta }$ ($0 < x leq 0.55$) and show that $sigma_{ab}$ of crystals with different doping levels can be well described by a two parameter universal function of the in-plane phase coherence length. In the electron-doped $Nd_{2-x}Ce_{x}CuO_{4-y}$, the dependence $sigma_{ab}(eta)$ indicates a crossover from incoherent to coherent transport in the c-direction.
Implementing topological insulators as elementary units in quantum technologies requires a comprehensive understanding of the dephasing mechanisms governing the surface carriers in these materials, which impose a practical limit to the applicability of these materials in such technologies requiring phase coherent transport. To investigate this, we have performed magneto-resistance (MR) and conductance fluctuations (CF) measurements in both exfoliated and molecular beam epitaxy grown samples. The phase breaking length ($l_{phi}$) obtained from MR shows a saturation below sample dependent characteristic temperatures, consistent with that obtained from CF measurements. We have systematically eliminated several factors that may lead to such behavior of $l_{phi}$ in the context of TIs, such as finite size effect, thermalization, spin-orbit coupling length, spin-flip scattering, and surface-bulk coupling. Our work indicates the need to identify an alternative source of dephasing that dominates at low $T$ in topological insulators, causing saturation in the phase breaking length and time.
Inorganic halide perovskites have emerged as a promising platform in a wide range of applications from solar energy harvesting to computing, and light emission. The recent advent of epitaxial thin film growth of halide perovskites has made it possible to investigate low-dimensional quantum electronic devices based on this class of materials. This study leverages advances in vapor-phase epitaxy of halide perovskites to perform low-temperature magnetotransport measurements on single-domain cesium tin iodide (CsSnI$_3$) epitaxial thin films. The low-field magnetoresistance carries signatures of coherent quantum interference effects and spin-orbit coupling. These weak anti-localization measurements reveal a micron-scale low-temperature phase coherence length for charge carriers in this system. The results indicate that epitaxial halide perovskite heterostructures are a promising platform for investigating long coherent quantum electronic effects and potential applications in spintronics and spin-orbitronics.
Systematic measurements of the resistivity, heat capacity, susceptibility and Hall coefficient are presented for single crystal samples of the electron-doped superconductor Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$. These data delineate an $x-T$ phase diagram in which the single magnetic/structural phase transition that is observed for undoped BaFe$_2$As$_2$ at 134 K apparently splits into two distinct phase transitions, both of which are rapidly suppressed with increasing Co concentration. Superconductivity emerges for Co concentrations above $x sim 0.025$, and appears to coexist with the broken symmetry state for an appreciable range of doping, up to $x sim 0.06$. The optimal superconducting transition temperature appears to coincide with the Co concentration at which the magnetic/structural phase transitions are totally suppressed, at least within the resolution provided by the finite step size between crystals prepared with different doping levels. Superconductivity is observed for a further range of Co concentrations, before being completely suppressed for $x sim 0.018$ and above. The form of this $x-T$ phase diagram is suggestive of an association between superconductivity and a quantum critical point arising from suppression of the magnetic and/or structural phase transitions.
Measuring ThermoRemanent Magnetization (TRM) decays on a single crystal CuMn(6$%$) spin glass sample, we have systematically mapped the rapid decrease of the characteristic timescale $tw_{eff}$ near $T_g$. Using $tw_{eff}$ to determine the length scale of the growth of correlations during the waiting time, $xi_{TRM}$, (observed in both numerical studies and experiment), we observe both growth of $xi_{TRM}$ in the spin glass phase and then a rapid reduction very close to $T_g$. We interpret this reduction in $xi_{TRM}$, for all waiting times, as being governed by the critical correlation length scale $xi_{crit}=a(T-T_c)^{- u}$.