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Register a new userEngineering telecom single-photon emitters in silicon for scalable quantum photonics
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We create and isolate single-photon emitters with a high brightness approaching $10^5$ counts per second in commercial silicon-on-insulator (SOI) wafers. The emission occurs in the infrared spectral range with a spectrally narrow zero phonon line in the telecom O-band and shows a high photostability even after days of continuous operation. The origin of the emitters is attributed to one of the carbon-related color centers in silicon, the so-called G center, allowing purification with the $^{12}$C and $^{28}$Si isotopes. Furthermore, we envision a concept of a highly-coherent scalable quantum photonic platform, where single-photon sources, waveguides and detectors are integrated on a SOI chip. Our results provide a route towards the implementation of quantum processors, repeaters and sensors compatible with the present-day silicon technology.
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Silicon carbide is a promising platform for single photon sources, quantum bits (qubits) and nanoscale sensors based on individual color centers. Towards this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400-1,400 nm diameters. We obtain high collection efficiency, up to 22 kcounts/s optical saturation rates from a single silicon vacancy center, while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum photonics architecture relying on single photon sources and qubits.
Single-photon emitters are essential for enabling several emerging applications in quantum information technology, quantum sensing and quantum communication. Scalable photonic platforms capable of hosting intrinsic or directly embedded sources of single-photon emission are of particular interest for the realization of integrated quantum photonic circuits. Here, we report on the first-time observation of room-temperature single-photon emitters in silicon nitride (SiN) films grown on silicon dioxide substrates. As SiN has recently emerged as one of the most promising materials for integrated quantum photonics, the proposed platform is suitable for scalable fabrication of quantum on-chip devices. Photophysical analysis reveals bright (>$10^5$ counts/s), stable, linearly polarized, and pure quantum emitters in SiN films with the value of the second-order autocorrelation function at zero time delay $g^{(2)}(0)$ below 0.2 at room temperatures. The emission is suggested to originate from a specific defect center in silicon nitride due to the narrow wavelength distribution of the observed luminescence peak. Single-photon emitters in silicon nitride have the potential to enable direct, scalable and low-loss integration of quantum light sources with the well-established photonic on-chip platform.
Long-distance entanglement distribution is a vital capability for quantum technologies. An outstanding practical milestone towards this aim is the identification of a suitable matter-photon interface which possesses, simultaneously, long coherence lifetimes and efficient telecommunications-band optical access. In this work, alongside its sister publication, we report upon the T center, a silicon defect with spin-selective optical transitions at 1326 nm in the telecommunications O-band. Here we show that the T center in $^{28}$Si offers electron and nuclear spin lifetimes beyond a millisecond and second respectively, as well as optical lifetimes of 0.94(1) $mu$s and a Debye-Waller factor of 0.23(1). This work represents a significant step towards coherent photonic interconnects between long-lived silicon spins, spin-entangled telecom single-photon emitters, and spin-dependent silicon-integrated photonic nonlinearities for future global quantum technologies.
Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificial atoms either formed by impurities or quantum dots have emerged as a promising solution for silicon-based integrated quantum circuits. However, single qubits featuring an optical interface needed for large-distance exchange of information have not yet been isolated in such a prevailing semiconductor. Here we show the isolation of single optically-active point defects in a commercial silicon-on-insulator wafer implanted with carbon atoms. These artificial atoms exhibit a bright, linearly polarized single-photon emission at telecom wavelengths suitable for long-distance propagation in optical fibers. Our results demonstrate that despite its small bandgap (~ 1.1 eV) a priori unfavorable towards such observation, silicon can accommodate point defects optically isolable at single scale, like in wide-bandgap semiconductors. This work opens numerous perspectives for silicon-based quantum technologies, from integrated quantum photonics to quantum communications and metrology.
In the field of quantum photon sources, single photon emitter from solid is of fundamental importance for quantum computing, quantum communication, and quantum metrology. However, it has been an ultimate but seemingly distant goal to find the single photon sources that stable at room or high temperature, with high-brightness and broad ranges emission wavelength that successively cover ultraviolet to infrared in one host material. Here, we report an ultraviolet to near-infrared broad-spectrum single photon emitters (SPEs) based on a wide band-gap semiconductor material hexagonal boron nitride (hBN). The bright, high purity and stable SPEs with broad-spectrum are observed by using the resonant excitation technique. The single photon sources here can be operated at liquid helium, room temperature and even up to 1100 K. Depending on the excitation laser wavelengths, the SPEs can be dramatically observed from 357 nm to 896 nm. The single photon purity is higher than to 90 percentage and the narrowest linewidth of SPE is down to $sim$75 $mu$eV at low temperature, which reaches the resolution limit of our spectrometer. Our work not only paves a way to engineer a monolithic semiconductor tunable SPS, but also provides fundamental experimental evidence to understand the electronic and crystallographic structure of SPE defect states in hBN.
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