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Register a new userQuantum Electronic Transport Across Bite Defects in Graphene Nanoribbons
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On-surface synthesis has recently emerged as an effective route towards the atomically precise fabrication of graphene nanoribbons of controlled topologies and widths. However, whether and to which degree structural disorder occurs in the resulting samples is a crucial issue for prospective applications that remains to be explored. Here, we experimentally identify missing benzene rings at the edges, which we name bite defects, as the most abundant type of disorder in armchair nanoribbons synthesized by the bottom-up approach. First, we address their density and spatial distribution on the basis of scanning tunnelling microscopy and find that they exhibit a strong tendency to aggregate. Next, we explore their effect on the quantum charge transport from first-principles calculations, revealing that such imperfections substantially disrupt the conduction properties at the band edges. Finally, we generalize our theoretical findings to wider nanoribbons in a systematic manner, hence establishing practical guidelines to minimize the detrimental role of such defects on the charge transport. Overall, our work portrays a detailed picture of bite defects in bottom-up armchair graphene nanoribbons and assesses their effect on the performance of carbon-based nanoelectronic devices.
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We unveil the nature of the structural disorder in bottom-up zigzag graphene nanoribbons along with its effect on the magnetism and electronic transport on the basis of scanning probe microscopies and first-principles calculations. We find that edge-missing m-xylene units emerging during the cyclodehydrogenation step of the on-surface synthesis are the most common point defects. These bite defects act as spin-1 paramagnetic centers, severely disrupt the conductance spectrum around the band extrema, and give rise to spin-polarized charge transport. We further show that the electronic conductance across graphene nanoribbons is more sensitive to bite defects forming at the zigzag edges than at the armchair ones. Our work establishes a comprehensive understanding of the low-energy electronic properties of disordered bottom-up graphene nanoribbons.
Using first-principles calculations, the effect of magnetic point defects (vacancy and adatom) is investigated in zigzag graphene nanoribbons. The structural, electronic, and spin-transport properties are studied. While pristine ribbons display anti-parallel spin states at their edges, the defects are found to perturb this coupling. The introduction of a vacancy drastically reduces the energy difference between parallel and anti-parallel spin orientations, though the latter is still favored. Moreover, the local magnetic moment of the defect is screened by the edges so that the total magnetic moment is quite small. In contrast, when an adatom is introduced, the parallel spin orientation is preferred and the local magnetic moment of the defect adds up to the contributions of the edges. Furthermore, a spin-polarized transmission is observed at the Fermi energy, suggesting the use of such a defective graphene nanoribbon as spin-valve device.
The success of all-graphene electronics is severely hindered by the challenging realization and subsequent integration of semiconducting channels and metallic contacts. Here, we comprehensively investigate the electronic transport across width-modulated heterojunctions consisting of a graphene quantum dot of varying lengths and widths embedded in a pair of armchair-edged metallic nanoribbons, of the kind recently fabricated via on-surface synthesis. We show that the presence of the quantum dot enables the opening of a width-dependent transport gap, thereby yielding built-in one-dimensional metal-semiconductor-metal junctions. Furthermore, we find that, in the vicinity of the band edges, the conductance is subject to a smooth transition from an antiresonant to a resonant transport regime upon increasing the channel length. These results are rationalized in terms of a competition between quantum-confinement effects and quantum dot-to-lead coupling. Overall, our work establishes graphene quantum dot nanoarchitectures as appealing platforms to seamlessly integrate gap-tunable semiconducting channels and metallic contacts into an individual nanoribbon, hence realizing self-contained carbon-based electronic devices.
Using the density functional theory, we have demonstrated the chemical functionalization of semiconducting graphene nanoribbons (GNRs) with Stone-Wales (SW) defects by carboxyl (COOH) groups. It is found that the geometrical structures and electronic properties of the GNRs changed significantly, and the electrical conductivity of the system could be considerably enhanced by mono-adsorption and double-adsorption of COOH, which sensitively depends upon the axial concentration of SW defects COOH pairs (SWDCPs). With the increase of the axial concentration of SWDCPs, the system would transform from semiconducting behavior to p-type metallic behavior. This fact makes GNRs a possible candidate for chemical sensors and nanoelectronic devices based on graphene nanoribbons.
In this paper, we study the quantum properties of a bilayer graphene with (asymmetry) line defects. The localized states are found around the line defects. Thus, the line defects on one certain layer of the bilayer graphene can lead to an electric transport channel. By adding a bias potential along the direction of the line defects, we calculate the electric conductivity of bilayer graphene with line defects using Landauer-B{u}ttiker theory, and show that the channel affects the electric conductivity remarkably by comparing the results with those in a perfect bilayer graphene. This one-dimensional line electric channel has the potential to be applied in the nanotechnology engineering.
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