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Register a new userPrecise Fabrication of Uniform Molecular Gaps for Active Nanoscale Devices
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Molecules with versatile functionalities and well-defined structures, can serve as building blocks for extreme nanoscale devices. This requires their precise integration into functional heterojunctions, most commonly in the form of metal-molecule-metal architectures. Structural damage and nonuniformities caused by current fabrication techniques, however, limit their effective incorporation. Here, we present a hybrid fabrication approach enabling uniform molecular gaps. Template-stripped lithographically-patterned gold electrodes with sub-nanometer roughness are used as the bottom contacts upon which the molecular layer is formed through self-assembly. The top contacts are assembled using dielectrophoretic trapping of colloidal gold nanorods, resulting in uniform sub-5 nm junctions. In these electrically-active designs, we further explore the possibility of mechanical tunability. The presence of molecules may help control sub-nanometer mechanical modulation which is conventionally difficult to achieve due to instabilities caused by surface adhesive forces. Our approach is versatile, providing a platform to develop and study active molecular gaps towards functional nanodevices.
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The microelectronics industry is pushing the fundamental limit on the physical size of individual elements to produce faster and more powerful integrated chips. These chips have nanoscale features that dissipate power resulting in nanoscale hotspots leading to device failures. To understand the reliability impact of the hotspots, the device needs to be tested under the actual operating conditions. Therefore, the development of high-resolution thermometry techniques is required to understand the heat dissipation processes during the device operation. Recently, several thermometry techniques have been proposed,such as radiation thermometry, thermocouple based contact thermometry, scanning thermal microscopy (SThM), scanning transmission electron microscopy (STEM) and transition based threshold thermometers. However, most of these techniques have limitations including the need for extensive calibration, perturbation of the actual device temperature, low throughput, and the use of ultra-high vacuum. Here, we present a facile technique, which uses a thin film contact thermometer based on the phase change material Ge2Sb2Te5, to precisely map thermal contours from the nanoscale to the microscale. Ge2Sb2Te5 undergoes a crystalline transition at Tg with large changes in its electric conductivity, optical reflectivity and density. Using this approach, we map the surface temperature of a nanowire and an embedded micro-heater on the same chip where the scales of the temperature contours differ by three orders of magnitude. The spatial resolution can be as high as 20 nanometers thanks to the continuous nature of the thin film.
We describe an all-optical lithography process that can be used to make electrical contact to atomic-precision donor devices made in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.
This mini review focuses on conductance measurements through molecular junctions containing few tens of molecules, which are fabricated along two approaches: (i) conducting atomic force microscope contacting a self-assembled monolayers on metal surface, and (ii) tiny molecular junctions made of metal nanodot (diameter < 10 nm), covered by fewer than 100 molecules and contacted by a conducting atomic force microscope. In particular, this latter approach has allowed to obtain new results or to revisit previous ones, which are reviewed here: (i) how the electron transport properties of molecular junctions are modified by mechanical constraint, (ii) the role of intermolecular interactions on the shape of conductance histograms of molecular junctions, and (iii) the demonstration that a molecular diode can operate in the microwave regime up to 18 GHz.
Controlled atomic scale fabrication of functional devices is one of the holy grails of nanotechnology. The most promising class of techniques that enable deterministic nanodevice fabrication are based on scanning probe patterning or surface assembly. However, this typically involves a complex process flow, stringent requirements for an ultra high vacuum environment, long fabrication times and, consequently, limited throughput and device yield. Here, a device platform is developed that overcomes these limitations by integrating scanning probe based dopant device fabrication with a CMOS-compatible process flow. Silicon on insulator substrates are used featuring a reconstructed Si(001):H surface that is protected by a capping chip and has pre-implanted contacts ready for scanning tunneling microscope (STM) patterning. Processing in ultra-high vacuum is thus reduced to only a few critical steps which minimizes the complexity, time and effort required for fabrication of the nanoscale dopant devices. Subsequent reintegration of the samples into the CMOS process flow not only simplifies the post-processing but also opens the door to successful application of STM based dopant devices as a building block in more complex device architectures. Full functionality of this approach is demonstrated with magnetotransport measurements on degenerately doped STM patterned Si:P nanowires up to room temperature.
We report on a nanomechanical engineering method to monitor matter growth in real time via e-beam electromechanical coupling. This method relies on the exceptional mass sensing capabilities of nanomechanical resonators. Focused electron beam induced deposition (FEBID) is employed to selectively grow platinum particles at the free end of singly clamped nanotube cantilevers. The electron beam has two functions: it allows both to grow material on the nanotube and to track in real time the deposited mass by probing the noise-driven mechanical resonance of the nanotube. On the one hand, this detection method is highly effective as it can resolve mass deposition with a resolution in the zeptogram range; on the other hand, this method is simple to use and readily available to a wide range of potential users, since it can be operated in existing commercial FEBID systems without making any modification. The presented method allows to engineer hybrid nanomechanical resonators with precisely tailored functionality. It also appears as a new tool for studying growth dynamics of ultra-thin nanostructures, opening new opportunities for investigating so far out-of-reach physics of FEBID and related methods.
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