No Arabic abstract
A diamond anvil cell (DAC) which can generate extremely high pressure of multi-megabar is promising tool to develop a further physics such a high-transition temperature superconductivity. However, electrical transport measurements, which is one of the most important properties of such functional materials, using the DAC is quite difficult because the sample space is very small and a deformation of electrodes under extreme condition. In this study, we fabricated a boron-doped diamond micro-electrode and an undoped diamond insulation on a beveled culet surface of the diamond anvil. By using the developed DAC, we demonstrated the electrical transport measurements for sulfur hydride H$_2$S which known as a pressure-induced high-transition temperature superconducting H$_3$S at high pressure. The measurements were successfully conducted under high pressure up to 192 GPa, and then a multi-step superconducting transition composed from pure sulfur and some kinds of surfer hydrides, which is possible HS$_2$, was observed with zero resistance.
A novel diamond anvil cell suitable for electrical transport measurements under high pressure has been developed. A boron-doped metallic diamond film was deposited as an electrode onto a nano-polycrystalline diamond anvil using a microwave plasma-assisted chemical vapor deposition technique combined with electron beam lithography. The electrical transport measurements of Pb were performed up to 8 GPa, and the maximum pressure reached was above 30 GPa. The boron-doped metallic diamond electrodes showed no signs of degradation after repeated compression measurements.
This work investigates the high-pressure structure of freestanding superconducting ($T_{c}$ = 4.3,K) boron doped diamond (BDD) and how it affects the electronic and vibrational properties using Raman spectroscopy and x-ray diffraction in the 0-30,GPa range. High-pressure Raman scattering experiments revealed an abrupt change in the linear pressure coefficients and the grain boundary components undergo an irreversible phase change at 14,GPa. We show that the blue shift in the pressure-dependent vibrational modes correlates with the negative pressure coefficient of $T_{c}$ in BDD. The analysis of x-ray diffraction data determines the equation of state of the BDD film, revealing a high bulk modulus of $B_{0}$=510$pm$28,GPa. The comparative analysis of high-pressure data clarified that the sp$^{2}$ carbons in the grain boundaries transform into hexagonal diamond.
Boron-doped diamond granular thin films are known to exhibit superconductivity with an optimal critical temperature of Tc = 7.2K. Here we report the measured complex surface impedance of Boron-doped diamond films in the microwave frequency range using a resonant technique. Experimentally measured inductance values are in good agreement with estimates obtained from the normal state sheet resistance of the material. The magnetic penetration depth temperature dependence is consistent with that of a fully-gapped s-wave superconductor. Boron-doped diamond films should find application where high kinetic inductance is needed, such as microwave kinetic inductance detectors and quantum impedance devices.
We consider superconductivity in boron (B) doped diamond using a simplified model for the valence band of diamond. We treat the effects of substitutional disorder of B ions by the coherent potential approximation (CPA) and those of the attractive force between holes by the ladder approximation under the assumption of instantaneous interaction with the Debye cutoff. We thereby calculate the quasiparticle life time, the evolution of the single-particle spectra due to doping, and the effect of disorder on the superconducting critical temperature $T_c$. We in particular compare our results with those for supercell calculations to see the role of disorder, which turns out to be of crucial importance to $T_c$.
We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5x10^{21} cm^{-3} and a critical temperature of about 2 K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characterstic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T^{-2}, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature T_c, evidence for an increasing relaxation time on both sides of T_c.