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Register a new userSustainable spin current in the time-dependent Rashba system
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The generation of spin current and spin polarization in 2DEG Rashba system is considered, in which the spin-orbital coupling (SOC) is modulated by an ac gate voltage. By using non-Abelian gauge field method, we show the presence of an additional electric field. This field induces a spin current generated even in the presence of impurity scattering and is related to the time-modulation of the Rashba SOC strength. In addition, the spin precession can be controlled by modulating the modulation frequency of the Rashba SOC strength. It is shown that at high modulation frequency, the precessional motion is suppressed so that the electron spin polarization can be sustained in the 2DEG
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Employing unbiased large-scale time-dependent density-matrix renormalization-group simulations, we demonstrate the generation of a charge-current vortex via spin injection in the Rashba system. The spin current is polarized perpendicular to the system plane and injected from an attached antiferromagnetic spin chain. We discuss the conversion between spin and orbital angular momentum in the current vortex that occurs because of the conservation of the total angular momentum and the spin-orbit interaction. This is in contrast to the spin Hall effect, in which the angular-momentum conservation is violated. Finally, we predict the electromagnetic field that accompanies the vortex with regard to possible future experiments.
We demonstrate a spin pump to generate pure spin current of tunable intensity and polarization in the absence of charge current. The pumping functionality is achieved by means of an ac gate voltage that modulates the Rashba constant dynamically in a local region of a quantum channel with both static Rashba and Dresselhaus spin-orbit interactions. Spin-resolved Floquet scattering matrix is calculated to analyze the whole scattering process. Pumped spin current can be divided into spin-preserved transmission and spin-flip reflection parts. These two terms have opposite polarization of spin current and are competing with each other. Our proposed spin-based device can be utilized for non-magnetic control of spin flow by tuning the ac gate voltage and the driving frequency.
We have performed density functional theory calculation and tight binging analysis in order to investigate the mechanism for the giant Rashba-type spin splitting (RSS) observed in Bi/Ag(111). We find that local orbital angular momentum induces momentum and spin dependent charge distribution which results in spin-dependent hopping. We show that the spin-dependent interatomic-hopping in Bi/Ag(111) works as a strong effective field and induces the giant RSS, indicating that the giant RSS is driven by hopping, not by a uniform electric field. The effective field from the hopping energy difference amounts to be ~18 V/{AA}. This new perspective on the RSS gives us a hint for the giant RSS mechanism in general and should provide a strategy for designing new RSS materials by controlling spin-dependence of hopping energy between the neighboring atomic layers.
Within an effective Dirac theory the low-energy dispersions of monolayer graphene in the presence of Rashba spin-orbit coupling and spin-degenerate bilayer graphene are described by formally identical expressions. We explore implications of this correspondence for transport by choosing chiral tunneling through pn and pnp junctions as a concrete example. A real-space Greens function formalism based on a tight-binding model is adopted to perform the ballistic transport calculations, which cover and confirm previous theoretical results based on the Dirac theory. Chiral tunneling in monolayer graphene in the presence of Rashba coupling is shown to indeed behave like in bilayer graphene. Combined effects of a forbidden normal transmission and spin separation are observed within the single-band n to p transmission regime. The former comes from real-spin conservation, in analogy with pseudospin conservation in bilayer graphene, while the latter arises from the intrinsic spin-Hall mechanism of the Rashba coupling.
We study theoretically the spin and orbital angular momentum (OAM) Hall effect in a high mobility two-dimensional electron system with Rashba and Dresselhuas spin-orbit coupling by introducing both the spin and OAM torque corrections, respectively, to the spin and OAM currents. We find that when both bands are occupied, the spin Hall conductivity is still a constant (i.e., independent of the carrier density) which, however, has an opposite sign to the previous value. The spin Hall conductivity in general would not be cancelled by the OAM Hall conductivity. The OAM Hall conductivity is also independent of the carrier density but depends on the strength ratio of the Rashba to Dresselhaus spin-orbit coupling, suggesting that one can manipulate the total Hall current through tuning the Rashba coupling by a gate voltage. We note that in a pure Rashba system, though the spin Hall conductivity is exactly cancelled by the OAM Hall conductivity due to the angular momentum conservation, the spin Hall effect could still manifest itself as nonzero magnetization Hall current and finite magnetization at the sample edges because the magnetic dipole moment associated with the spin of an electron is twice as large as that of the OAM. We also evaluate the electric field-induced OAM and discuss the origin of the OAM Hall current. Finally, we find that the spin and OAM Hall conductivities are closely related to the Berry vector (or gauge) potential.
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