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Register a new userAnomalous thermodiffusion of electrons in graphene
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We reveal a dramatic departure of electron thermodiffusion in solids relative to the commonly accepted picture of the ideal free-electron gas model. In particular, we show that the interaction with the lattice and impurities, combined with a strong material dependence of the electron dispersion relation, leads to counterintuitive diffusion behavior, which we identify by comparing a single-layer two-dimensional electron gas (2DEG) and graphene. When subject to a temperature gradient $ abla T$, thermodiffusion of massless Dirac electrons in graphene exhibits an anomalous behavior with electrons moving along $ abla T$ and accumulating in hot regions, in contrast to normal electron diffusion in a 2DEG with parabolic dispersion, where net motion against $ abla T$ is observed, accompanied by electron depletion in hot regions. These findings have fundamentally importance for the understanding of the spatial electron dynamics in emerging material, establishing close relations with other branches of physics dealing with electron systems under nonuniform temperature conditions.
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We have investigated a new feature of impurity cyclotron resonances common to various localized potentials of graphene. A localized potential can interact with a magnetic field in an unexpected way in graphene. It can lead to formation of anomalous boundstates that have a sharp peak with a width $R$ in the probability density inside the potential and a broad peak of size magnetic length $ell$ outside the potential. We investigate optical matrix elements of anomalous states, and find that they are unusually small and depend sensitively on magnetic field. The effect of many-body interactions on their optical conductivity is investigated using a self-consistent time-dependent Hartree-Fock approach (TDHFA). For a completely filled Landau level we find that an excited electron-hole pair, originating from the optical transition between two anomalous impurity states, is nearly uncorrelated with other electron-hole pairs, although it displays a substantial exchange self-energy effects. This absence of correlation is a consequence of a small vertex correction in comparison to the difference between renormalized transition energies computed within the one electron-hole pair approximation. However, an excited electron-hole pair originating from the optical transition between a normal and an anomalous impurity states can be substantially correlated with other electron-hole states with a significant optical strength.
Ballistic semiconductor structures have allowed the realization of optics-like phenomena in electronics, including magnetic focusing and lensing. An extension that appears unique to graphene is to use both n and p carrier types to create electronic analogs of optical devices having both positive and negative indices of refraction. Here, we use gate-controlled density with both p and n carrier types to demonstrate the analog of the fiber-optic guiding in graphene. Two basic effects are investigated: (1) bipolar p-n junction guiding, based on the principle of angle-selective transmission though the graphene p-n interface, and (2) unipolar fiber-optic guiding, using total internal reflection controlled by carrier density. Modulation of guiding efficiency through gating is demonstrated and compared to numerical simulations, which indicates that interface roughness limits guiding performance, with few-nanometer effective roughness extracted. The development of p-n and fiber-optic guiding in graphene may lead to electrically reconfigurable wiring in high-mobility devices.
Electrons in graphene can travel for several microns without scattering at low temperatures, and their motion becomes ballistic, following classical trajectories. When a magnetic field B is applied perpendicular to the plane, electrons follow cyclotron orbits. Magnetic focusing occurs when electrons injected from one narrow contact focus onto a second contact located an integer number of cyclotron diameters away. By tuning the magnetic field B and electron density n in the graphene layer, we observe magnetic focusing peaks. We use a cooled scanning gate microscope to image cyclotron trajectories in graphene at 4.2 K. The tip creates a local change in density that casts a shadow by deflecting electrons flowing nearby; an image of flow can be obtained by measuring the transmission between contacts as the tip is raster scanned across the sample. On the first magnetic focusing peak, we image a cyclotron orbit that extends from one point contact to the other. In addition, we study the geometry of orbits deflected into the second point contact by the tip.
Geometrically a crystal containing dislocations and disclinations can be envisaged as a `fixed frame Cartan--Einstein space-time carrying torsion and curvature, respectively. We demonstrate that electrons in defected graphene are transported in the same way as fundamental Dirac fermions in a non-trivial 2+1 dimensional space-time, with the proviso that the graphene electrons remember the lattice constant through the valley quantum numbers. The extra `valley holonomy corresponds to modified Euclidean symmetry generators.
We propose a method of measuring the electron temperature $T_e$ in mesoscopic conductors and demonstrate experimentally its applicability to micron-size graphene devices in the linear-response regime ($T_eapprox T$, the bath temperature). The method can be {especially useful} in case of overheating, $T_e>T$. It is based on analysis of the correlation function of mesoscopic conductance fluctuations. Although the fluctuation amplitude strongly depends on the details of electron scattering in graphene, we show that $T_e$ extracted from the correlation function is insensitive to these details.
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