Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userElectronic Origin for the Enhanced Thermoelectric Efficiency of Cu2Se
90
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Thermoelectric materials (TMs) can uniquely convert waste heat into electricity, which provides a potential solution for the global energy crisis that is increasingly severe. Bulk Cu2Se, with ionic conductivity of Cu ions, exhibits a significant enhancement of its thermoelectric figure of merit zT by a factor of ~3 near its structural transition around 400 K. Here, we show a systematic study of the electronic structure of Cu2Se and its temperature evolution using high-resolution angle-resolved photoemission spectroscopy. Upon heating across the structural transition, the electronic states near the corner of the Brillouin zone gradually disappear, while the bands near the centre of Brillouin zone shift abruptly towards high binding energies and develop an energy gap. Interestingly, the observed band reconstruction well reproduces the temperature evolution of the Seebeck coefficient of Cu2Se, providing an electronic origin for the drastic enhancement of the thermoelectric performance near 400 K. The current results not only bridge among structural phase transition, electronic structures, and thermoelectric properties in a condensed matter system, but also provide valuable insights into the search and design of new generation of thermoelectric materials.
rate research
Read More
Thermoelectric devices that utilize the Seebeck effect convert heat flow into electrical energy and are highly desirable for the development of portable, solid state, passively-powered electronic systems. The conversion efficiencies of such devices are quantified by the dimensionless thermoelectric figure of merit (ZT), which is proportional to the ratio of a devices electrical conductance to its thermal conductance. High ZT (>2) has been achieved in materials via all-scale hierarchical architecturing. This efficiency holds at high temperatures (700K~900K) but quickly diminishes at lower temperatures. In this paper, a recently-fabricated two-dimensional (2D) semiconductor called phosphorene (monolayer black phosphorus) is assessed for its thermoelectric capabilities. First-principles and model calculations reveal that phosphorene possesses spatially-anisotropic electrical and thermal conductances. The prominent electrical and thermal conducting directions are orthogonal to one another, enhancing the ratio of these conductances. As a result, ZT can reach 2.5 (the criterion for commercial deployment) along the armchair direction of phosphorene at T=500K and is greater than 1 even at room temperature given moderate doping (~2 x 10^16 m-2). Ultimately, phosphorene stands out as an environmentally sound thermoelectric material with unprecedented qualities: intrinsically, it is a mechanically flexible material that converts heat energy with high efficiency at low temperatures (~ 300K) - one whose performance does not require any sophisticated engineering techniques.
Thermoelectric materials can be used to convert heat to electric power through the Seebeck effect. We study magneto-thermoelectric figure of merit (ZT) in three-dimensional Dirac semimetal Cd$_3$As$_2$ crystal. It is found that enhancement of power factor and reduction of thermal conductivity can be realized at the same time through magnetic field although magnetoresistivity is greatly increased. ZT can be highly enhanced from 0.17 to 1.1 by more than six times around 350 K under a perpendicular magnetic field of 7 Tesla. The huge enhancement of ZT by magnetic field arises from the linear Dirac band with large Fermi velocity and the large electric thermal conductivity in Cd$_3$As$_2$. Our work paves a new way to greatly enhance the thermoelectric performance in the quantum topological materials.
We investigate the high temperature thermoelectric properties of Heusler alloys Fe2-xMnxCrAl (0<x<1). Substitution of 12.5% Mn at Fe-site (x = 0.25) causes a significant increase in high temperature resistivity (r{ho}) and an enhancement in the Seebeck coefficient (S), as compared to the parent alloy. However, as the concentration of Mn is increased above 0.25, a systematic decrement in the magnitude of both parameters is noted. These observations have been ascribed (from theoretical analysis) to a change in band gap and electronic structure of Fe2CrAl with Mn-substitution. Due to absence of mass fluctuations and lattice strain, no significant change in thermal conductivity is seen across this series of Heusler alloys. Additionally, S drastically changes its magnitude along with a crossover from negative to positive above 900 K, which has been ascribed to the dominance of holes over electrons in high temperature regime. In this series of alloys, S and r{ho} shows a strong dependence on the carrier concentration and strength of d-d hybridization between Fe/Mn and Cr atoms.
The relative importance of atomic defects and electron transfer in explaining conductivity at the crystalline LaAlO3/SrTiO3 interface has been a topic of debate. Metallic interfaces with similar electronic properties produced by amorphous oxide overlayers on SrTiO3 have called in question the original polarization catastrophe model. We resolve the issue by a comprehensive comparison of (100)-oriented SrTiO3 substrates with crystalline and amorphous overlayers of LaAlO3 of different thicknesses prepared under different oxygen pressures. For both types of overlayers, there is a critical thickness for the appearance of conductivity, but its value is always 4 unit cells (around 1.6 nm) for the oxygen-annealed crystalline case, whereas in the amorphous case, the critical thickness could be varied in the range 0.5 to 6 nm according to the deposition conditions. Subsequent ion milling of the overlayer restores the insulating state for the oxygen-annealed crystalline heterostructures but not for the amorphous ones. Oxygen post-annealing removes the oxygen vacancies, and the interfaces become insulating in the amorphous case. However, the interfaces with a crystalline overlayer remain conducting with reduced carrier density. These results demonstrate that oxygen vacancies are the dominant source of mobile carriers when the LaAlO3 overlayer is amorphous, while both oxygen vacancies and polarization catastrophe contribute to the interface conductivity in unannealed crystalline LaAlO3/SrTiO3 heterostructures, and the polarization catastrophe alone accounts for the conductivity in oxygen-annealed crystalline LaAlO3/SrTiO3 heterostructures. Furthermore, we find that the crystallinity of the LaAlO3 layer is crucial for the polarization catastrophe mechanism in the case of crystalline LaAlO3 overlayers.
We have combined temperature dependent local structural measurements with first principles density functional calculations to develop a three dimensional local structure model of the misfit system [Ca2CoO3][CoO2]1.61 (referred to as Ca3Co4O9) which has a rock salt structure stacked incommensurately on a hexagonal CoO2 lattice. The local structural measurements reveal a low coordination of Co(2)-O bonds in the rock salt layer with large static structural disorder. The temperature dependence of the Co(1)-Co(1) bond correlations in the CoO2 layer are found to be normal above ~75K and with a very small static disorder component. An anomalous enhancement in the Co(1)-Co(1) correlations occurs at the onset of long-range magnetic order. Density functional computations suggest that the reduction of the coordination of Co(2) is due to the formation of chains of Co(2)Ox in the a-b plane linked to the Ca-O layers by c-axis Co(2)-O bonds. The reduced dimensionality introduced by the chain-like structure in the rock salt layer and high atomic order in the C
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
