No Arabic abstract
We study the transport properties of an Anderson-Holstein model with orbital degeneracies and a tunneling phase that allows for the formation of dark states. The resulting destructive interference yields a characteristic pattern of positive and negative differential conductance features with enhanced shot noise, without further asymmetry requirements in the coupling to the leads. The transport characteristics are strongly influenced by the Lamb-shift renormalization of the system Hamiltonian. Thus, the electron-vibron coupling cannot be extracted by a simple fit of the current steps to a Poisson distribution. For strong vibronic relaxation, a simpler effective model with analytical solution allows for a better understanding and moreover demonstrates the robustness of the described effects.
We analyze the nonequilibrium dynamics and steady-state behavior of the two-terminal Anderson-Holstein model with a superconducting and a normal conducting lead. In the deep Kondo limit we develop an analytical description if no phonons are included and a rate equation approach when phonons are present. Both cases are compared with the numerically exact diagrammatic Monte Carlo method obtaining a good agreement. For small voltages we find a pronounced enhancement of phonon sidebands due to the SC DOS.
A fractional quasiparticle charge is a manifestation of strong interactions in the fractional quantum Hall effect. Nevertheless, shot noise of quasiparticles is well described by a formula, derived for noninteracting charges. We explain the success of that formula by proving that in the limits of strong and weak backscattering it holds irrespectively of microscopic details in weakly and strongly interacting systems alike. The derivation relies only on principles of statistical mechanics. We also derive an approximate model-independent formula for shot noise in the regime of intermediate backscattering. The equation is numerically close to the standard `noninteracting fitting formula but suggests a different physical interpretation of the experimental results. We verify our theoretical predictions with a shot noise experiment at the filling factor $3/5$.
We report measurements of current noise in single- and multi-layer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/-10% upon varying carrier type and density, and averages between 0.35 and 0.38. The Fano factor in a multi-layer device is found to decrease from a maximal value of 0.33 at the charge-neutrality point to 0.25 at high carrier density. These results are compared to theoretical predictions for shot noise in ballistic and disordered graphene.
Consider two Fermi gases with the same {it average} currents: a transport gas, as in solid-state experiments where the chemical potentials of terminal 1 is $mu+eV$ and of terminal 2 and 3 is $mu$, and a beam, i.e., electrons entering only from terminal 1 having energies between $mu$ and $mu+eV$. By expressing the current noise as a sum over single-particle transitions we show that the temporal current fluctuations are very different: The beam is noisier due to allowed single-particle transitions into empty states below $mu$. Surprisingly, the correlations between terminals 2 and 3 are the same.
We discuss polaron formation in disordered electron-phonon systems.