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Register a new userLarge longitudinal magnetoresistance of multivalley systems
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The longitudinal magnetoresistance (MR) is assumed to be hardly realized as the Lorentz force does not work on electrons when the magnetic field is parallel to the current. However, in some cases, longitudinal MR becomes large, which exceeds the transverse MR. To solve this problem, we have investigated the longitudinal MR considering multivalley contributions based on the classical MR theory. We have showed that the large longitudinal MR is caused by off-diagonal components of a mobility tensor. Our theoretical results agree with the experiments of large longitudinal MR in IV-VI semiconductors, especially in PbTe, for a wide range of temperatures, except for linear MR at low temperatures.
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The binary pnictide semimetals have attracted considerable attention due to their fantastic physical properties that include topological effects, negative magnetoresistance, Weyl fermions and large non-saturation magnetoresistance. In this paper, we have successfully grown the high-quality V1-deltaSb2 single crystals by Sb flux method and investigated their electronic transport properties. A large positive magnetoresistance that reaches 477% under a magnetic field of 12 T at T = 1.8 K was observed. Notably, the magnetoresistance showed a cusp-like feature at the low magnetic fields and such feature weakened gradually as the temperature increased, which indicated the presence of weak antilocalization effect (WAL). The angle-dependent magnetoconductance and the ultra-large prefactor alpha extracted from the Hikami-Larkin-Nagaoka equation revealed that the WAL effect is a 3D bulk effect originated from the three-dimensional bulk spin-orbital coupling.
Extremely large positive magnetoresistance (XMR) was found in a nonmagnetic semimetal InBi. Using several single crystals with different residual resistivity ratios (RRRs), we revealed that the XMR strongly depended on the RRR (sample quality). Assuming that there were no changes in effective mass m* and carrier concentrations in these single crystals, this dependence was explained by a semiclassical two-carrier model. First-principle calculations including the spin-orbit interactions (SOI) unveiled that InBi had a compensated carrier balance and SOI-induced hidden three-dimensional (3D) Dirac bands at the M and R points. Because the small m* and the large carrier mobilities will be realized, these hidden 3D Dirac bands should play an important role for the XMR in InBi. We suggest that this feature can be employed as a novel strategy for the creation of XMR semimetals.
Ultrathin sheets of transition metal dichalcogenides (MX$ _2$) with charge density waves (CDWs) is increasingly gaining interest as a promising candidate for graphene-like devices. Although experimental data including stripe/quasi-stripe structure and hidden states have been reported, the ground state of ultrathin MX$ _2$ compounds and, in particular, the origin of anisotropic (stripe and quasi-stripe) CDW phases is a long-standing problem. Anisotropic CDW phases have been explained by Coulomb interaction between domain walls and inter-layer interaction. However, these models assume that anisotropic domain walls can exist in the first place. Here, we report that anisotropic CDW domain walls can appear naturally without assuming anisotropic interactions: We explain the origin of these phases by topological defect theory (line defects in a two-dimensional plane) and interference between harmonics of macroscopic CDW wave functions. We revisit the McMillan-Nakanishi-Shiba model for monolayer 1$T$-TaS$ _2$ and 2$H$-TaSe$ _2$ and show that CDWs with wave vectors that are separated by $120^circ$ (i.e. the three-fold rotation symmetry of the underlying lattice) contain a free-energy landscape with many local minima. Then, we remove this $120^circ$ constraint and show that free energy local minima corresponding to the stripe and quasi-stripe phase appear. Our results imply that Coulomb interaction between domain walls and inter-layer interaction may be secondary factors for the appearance of these phases. Furthermore, this model can predict new CDW phases, hence it may become the basis to study CDW further. We anticipate our results to be a starting point for further study in two-dimensional physics, such as explanation of Hidden CDW states, study the interplay between supersolid symmetry and lattice symmetry, and application to other van der Waals structures.
A notable phenomenon in topological semimetals is the violation of Kohler$^,$s rule, which dictates that the magnetoresistance $MR$ obeys a scaling behavior of $MR = f(H/rho_0$), where $MR = [rho_H-rho_0]/rho_0$ and $H$ is the magnetic field, with $rho_H$ and $rho_0$ being the resistivity at $H$ and zero field, respectively. Here we report a violation originating from thermally-induced change in the carrier density. We find that the magnetoresistance of the Weyl semimetal, TaP, follows an extended Kohler$^,$s rule $MR = f[H/(n_Trho_0)]$, with $n_T$ describing the temperature dependence of the carrier density. We show that $n_T$ is associated with the Fermi level and the dispersion relation of the semimetal, providing a new way to reveal information on the electronic bandstructure. We offer a fundamental understanding of the violation and validity of Kohler$^,$s rule in terms of different temperature-responses of $n_T$. We apply our extended Kohler$^,$s rule to BaFe$_2$(As$_{1-x}$P$_x$)$_2$ to settle a long-standing debate on the scaling behavior of the normal-state magnetoresistance of a superconductor, namely, $MR$ ~ $tan^2theta_H$, where $theta_H$ is the Hall angle. We further validate the extended Kohler$^,$s rule and demonstrate its generality in a semiconductor, InSb, where the temperature-dependent carrier density can be reliably determined both theoretically and experimentally.
Large unsaturated magnetoresistance has been recently reported in numerous semi-metals. Many of them have a topologically non-trivial band dispersion, such as Weyl nodes or lines. Here, we show that elemental antimony displays the largest high-field magnetoresistance among all known semi-metals. We present a detailed study of the angle-dependent magnetoresistance and use a semi-classical framework invoking an anisotropic mobility tensor to fit the data. A slight deviation from perfect compensation and a modest variation with magnetic field of the components of the mobility tensor are required to attain perfect fits at arbitrary strength and orientation of magnetic field in the entire temperature window of study. Our results demonstrate that large orbital magnetoresistance is an unavoidable consequence of low carrier concentration and the sub-quadratic magnetoresistance seen in many semi-metals can be attributed to field-dependent mobility, expected whenever the disorder length-scale exceeds the Fermi wavelength.
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