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Register a new userInternal quantum efficiency of AlGaN/AlN quantum dot superlattices for electron-pumped ultraviolet sources
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In this paper, we describe the growth and characterization of 530-nm-thick superlattices (100 periods) of AlxGa1-xN/AlN (x = 0, 0.1) Stranski-Krastanov quantum dots for application as the active region of electron-beam pumped ultraviolet lamps. Highly dense (>10e11 cm-2) quantum dot layers are deposited by molecular beam epitaxy, and we explore the effect of the III/V ratio during the growth process on their optical performance. The study considers structures emitting in the 244-335 nm range at room temperature, with a relative linewidth in the 6-11% range, mainly due to the QD diameter dispersion inherent in self-assembled growth. Under electron pumping, the emission efficiency remains constant for acceleration voltages below 9 kV. The correlation of this threshold with the total thickness of the superlattice and the penetration depth of the electron beam confirms the homogeneity of the nanostructures along the growth axis. Below the threshold, the emission intensity scales linearly with the injected current. The internal quantum efficiency is characterized at low injection, which reveals the material properties in terms of non-radiative processes, and high injection, which emulates carrier injection in operation conditions. In quantum dots synthesized with III/V ratio < 0.75, the internal quantum efficiency remains around 50% from low injection to pumping power densities as high as 200 kW/cm2, being the first kind of nanostructures that present such stable behaviour.
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In this paper, we describe the design and characterization of 400-nm-long (88 periods) AlxGa1-xN/AlN (0 < x < 0.1) quantum dot superlattices deposited on self-assembled GaN nanowires for application in electron-pumped ultraviolet sources. The optical performance of GaN/AlN superlattices on nanowires is compared with the emission of planar GaN/AlN superlattices with the same periodicity and thickness grown on bulk GaN substrates along the N-polar and metal-polar crystallographic axes. The nanowire samples are less sensitive to nonradiative recombination than planar layers, attaining internal quantum efficiencies (IQE) in excess of 60% at room temperature even under low injection conditions. The IQE remains stable for higher excitation power densities, up to 50 kW/cm2. We demonstrate that the nanowire superlattice is long enough to collect the electron-hole pairs generated by an electron beam with an acceleration voltage VA = 5 kV. At such VA, the light emitted from the nanowire ensemble does not show any sign of quenching under constant electron beam excitation (tested for an excitation power density around 8 kW/cm2 over the scale of minutes). Varying the dot/barrier thickness ratio and the Al content in the dots, the nanowire peak emission can be tuned in the range from 340 to 258 nm. Keywords: GaN, AlN, nanowire, ultraviolet
This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy. By combining these techniques, we demonstrate the effectiveness in studying strain in the vertical direction. This technique will enable the precise probing of properties of buried active layers in heterostructures, and can be extended in the future to vertical devices such as those used for optical emitters, and for power electronics.
We report results of quantum efficiency (QE) measurements carried out on a 150 nm thick nitrogen-incorporated ultrananocrystalline diamond terminated with hydrogen; abbreviated as (N)UNCD:H. (N)UNCD:H demonstrated a QE of $sim$10$^{-3}$ ($sim$0.1%) at 254 nm. Moreover, (N)UNCD:H was sensitive in visible light with a QE of $sim$5$times$10$^{-8}$ at 405 nm and $sim$5$times$10$^{-9}$ at 436 nm. After growth and prior to QE measurements, samples were exposed to air for about 2 hours for transfer and loading. Such design takes advantage of a key combination: 1) H-termination inducing negative electron affinity (NEA) on the (N)UNCD and stabilizies its surface against air exposure; and 2) N-incorporation inducing $n$-type conductivity in intrinsically insulating UNCD.
The electronic properties of heterojunction electron gases formed in GaN/AlGaN core/shell nanowires with hexagonal and triangular cross-sections are studied theoretically. We show that at nanoscale dimensions, the non-polar hexagonal system exhibits degenerate quasi-one-dimensional electron gases at the hexagon corners, which transition to a core-centered electron gas at lower doping. In contrast, polar triangular core/shell nanowires show either a non-degenerate electron gas on the polar face or a single quasi-one-dimensional electron gas at the corner opposite the polar face, depending on the termination of the polar face. More generally, our results indicate that electron gases in closed nanoscale systems are qualitatively different from their bulk counterparts.
We report the design, fabrication and optical investigation of electrically tunable single quantum dot - photonic crystal defect nanocavities operating in both the weak and strong coupling regimes of the light matter interaction. Unlike previous studies where the dot-cavity spectral detuning was varied by changing the lattice temperature, or by the adsorption of inert-gases at low temperatures, we demonstrate that the quantum confined Stark effect can be employed to quickly and reversibly switch the dot-cavity coupling simply by varying a gate voltage. Our results show that exciton transitions from individual dots can be tuned by ~4 meV relative to the nanocavity mode before the emission quenches due to carrier tunneling escape. This range is much larger than the typical linewidth of the high-Q cavity modes (~0.10 meV) allowing us to explore and contrast regimes where the dots couple to the cavity or decay by spontaneous emission into the 2D photonic bandgap. In the weak coupling regime, we show that the dot spontaneous emission rate can be tuned using a gate voltage, with Purcell factors >=7. New information is obtained on the nature of the dot-cavity coupling in the weak coupling regime and electrical control of zero dimensional polaritons is demonstrated for the highest-Q cavities (Q>=12000). Vacuum Rabi splittings up to ~0.13 meV are observed, much larger than the linewidths of either the decoupled exciton or cavity mode. These observations represent a voltage switchable optical non-linearity at the single photon level, paving the way towards on-chip dot based nano-photonic devices that can be integrated with passive optical components.
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