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Register a new userInsights into image contrast from dislocations in ADF-STEM
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Competitive mechanisms contribute to image contrast from dislocations in annular dark field scanning transmission electron microscopy ADF STEM. A clear theoretical understanding of the mechanisms underlying the ADF STEM contrast is therefore essential for correct interpretation of dislocation images. This paper reports on a systematic study of the ADF STEM contrast from dislocations in a GaN specimen, both experimentally and computationally. Systematic experimental ADF STEM images of the edge character dislocations revealed a number of characteristic contrast features that are shown to depend on both the angular detection range and specific position of the dislocation in the sample. A theoretical model based on electron channelling and Bloch wave scattering theories, supported by multislice simulations using Grillo s strain channelling equation, is proposed to elucidate the physical origin of such complex contrast phenomena.
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Nanotechnology research requires the routine use of characterization methods with high spatial resolution. These experiments are rather costly, not only from the point of view of the expensive microscopes, but also considering the need of a rather specialized equipment operator. Here, we describe the construction of an inexpensive and simple device that allows the analysis of nanoparticle in a FEG-SEM; images can be generated at high magnifications (ex. x500.000) and with nanometric resolution. It is based on the acquisition of transmitted electrons annular dark field (TE-ADF) signal; the systems can carry up to 16 TEM samples and, it is compatible with SEM sample exchange air-lock. Performance test have shown the measured ADF signal showed the atomic number and thickness dependence for transition metal nanoparticle about 10 nm in diameter. Also, the signal quality is high enough that the determination of the histogram of size distribution can be performed using a conventional image processing software, for gold particles in the range of 2-10 nm in diameter. The developed ADF device allows a much faster and cheaper high spatial resolution imaging of nanoparticle samples for routine morphological characterization and, provides an invaluable high throughput tool for an efficient sample screening.
The arrival of direct electron detectors (DED) with high frame-rates in the field of scanning transmission electron microscopy has enabled many experimental techniques that require collection of a full diffraction pattern at each scan position, a field which is subsumed under the name four dimensional-scanning transmission electron microscopy (4D-STEM). DED frame rates approaching 100 kHz require data transmission rates and data storage capabilities that exceed commonly available computing infrastructure. Current commercial DEDs allow the user to make compromises in pixel bit depth, detector binning or windowing to reduce the per-frame file size and allow higher frame rates. This change in detector specifications requires decisions to be made before data acquisition that may reduce or lose information that could have been advantageous during data analysis. The 4D Camera, a DED with 87 kHz frame-rate developed at Lawrence Berkeley National Laboratory, reduces the raw data to a linear-index encoded electron event representation (EER). Here we show with experimental data from the 4D Camera that linear-index encoded EER and its direct use in 4D-STEM phase contrast imaging methods enables real-time, interactive phase-contrast from large-area 4D-STEM datasets. We detail the computational complexity advantages of the EER and the necessary computational steps to achieve real-time interactive ptychography and center-of-mass differential phase contrast using commonly available hardware accelerators.
The use of coherent x-ray beams has been greatly developing for the past decades. They are now used by a wide scientific community to study biological materials, phase transitions in crystalline materials, soft matter, magnetism, strained structures, or nano-objects. Different kinds of measurements can be carried out: x-ray photon correlation spectroscopy allowing studying dynamics in soft and hard matter, and coherent diffraction imaging enabling to reconstruct the shape and strain of some objects by using methods such as holography or ptychography. In this article, we show that coherent x-ray diffraction (CXRD) brings a new insight in another scientific field: the detection of single phase defects in bulk materials. Extended phase objects such as dislocations embedded in the bulk are usually probed by electron microscopy or X-ray topography. However, electron microscopy is restricted to thin samples, and x-ray topography is resolution-limited. We show here that CXRD brings much more accurate information about dislocation lines (DLs) in bulk samples and opens a route for a better understanding of the fine structure of the core of bulk dislocations.
We present an aberration corrected scanning transmission electron microscopy (ac-STEM) analysis of the perovskite (LaFeO3) and pyrochlore (Yb2Ti2O7 and Pr2Zr2O7) oxides and demonstrate that both the shape and contrast of visible atomic columns in annular dark-field (ADF) images are sensitive to the presence of nearby atoms of low atomic number (e.g. oxygen). We show that point defects (e.g. oxygen vacancies), which are invisible - or difficult to observe due to limited sensitivity - in X-ray and neutron diffraction measurements, are the origin of the complex magnetic ground state of pyrochlore oxides. In addition, we present, for the first time, a method by which light atoms can be resolved in quantitative ADF-STEM images. Using this method, we resolved oxygen atoms in perovskite and pyrochlore oxides.
Considering the recent breakthroughs in the synthesis of novel two-dimensional (2D) materials from layered bulk structures, ternary layered transition metal borides, known as MAB phases, have come under scrutiny as a means of obtaining novel 2D transition metal borides, so-called MBene. Here, based on a set of phonon calculations, we show the dynamic stability of many Al-containing MAB phases, MAlB (M = Ti, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Tc), M$_2$AlB$_2$ (Sc, Ti, Zr, Hf, V, Cr, Mo, W, Mn, Tc, Fe, Rh, Ni), M$_3$Al$_2$B$_2$ (M = Sc, T, Zr, Hf, Cr, Mn, Tc, Fe, Ru, Ni), M$_3$AlB$_4$ (M = Sc, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Fe), and M$_4$AlB$_6$ (M = Sc, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo). By comparing the formation energies of these MAB phases with those of their available competing binary M$-$B and M$-$Al, and ternary M$-$Al$-$B phases, we find that some of the Sc-, Ti-, V-, Cr-, Mo-, W-, Mn-, Tc-, and Fe-based MAB phases could be favorably synthesized in an appropriate experimental condition. In addition, by examining the strengths of various bonds in MAB phases via crystal orbital Hamilton population and spring constant calculations, we find that the B$-$B and then M$-$B bonds are stiffer than the M$-$Al and Al$-$B bonds. The different strength between these bonds implies the etching possibility of Al atoms from MAB phases, consequently forming various 2D MB, M$_2$B$_3$, and M$_3$B$_4$ MBenes. Furthermore, we employ the nudged elastic band method to investigate the possibility of the structural phase transformation of the 2D MB MBenes into graphene-like boron sheets sandwiched between transition metals and find that the energy barrier of the transformation is less than $0.4$ eV/atom.
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