No Arabic abstract
The interest in perovskite nanocrystals (NCs) such as CsPbBr$_3$ for quantum applications is rapidly raising, as it has been demonstrated that they can behave as very efficient single photon emitters. The main problem to tackle in this context is their photo-stability under optical excitation. In this article, we present a full analysis of the optical and quantum properties of highly efficient perovskite nanocubes synthesized with an established method, which is used for the first time to produce quantum emitters, and is shown to ensure an increased photostability. These emitters exhibit reduced blinking together with a strong photon antibunching. Remarkably these features are hardly affected by the increase of the excitation intensity well above the emission saturation levels. Finally, we achieve for the first time the coupling of a single perovskite nanocube with a tapered optical nanofiber in order to aim for a compact integrated single photon source for future applications.
An optimal single-photon source should deterministically deliver one and only one photon at a time, with no trade-off between the sources efficiency and the photon indistinguishability. However, all reported solid-state sources of indistinguishable single photons had to rely on polarization filtering which reduced the efficiency by 50%, which fundamentally limited the scaling of photonic quantum technologies. Here, we overcome this final long-standing challenge by coherently driving quantum dots deterministically coupled to polarization-selective Purcell microcavities--two examples are narrowband, elliptical micropillars and broadband, elliptical Bragg gratings. A polarization-orthogonal excitation-collection scheme is designed to minimize the polarization-filtering loss under resonant excitation. We demonstrate a polarized single-photon efficiency of 0.60+/-0.02 (0.56+/-0.02), a single-photon purity of 0.975+/-0.005 (0.991+/-0.003), and an indistinguishability of 0.975+/-0.006 (0.951+/-0.005) for the micropillar (Bragg grating) device. Our work provides promising solutions for truly optimal single-photon sources combining near-unity indistinguishability and near-unity system efficiency simultaneously.
Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secure communications over long distances. In this work, we propose the monolithic growth of needlelike tapered InAs/InP quantum dot-nanowires (QD-NWs) on silicon substrates with a small taper angle and a nanowire diameter tailored to support a single mode waveguide. Such a NW geometry is obtained by a controlled balance over axial and radial growths during the gold-catalyzed growth of the NWs by molecular beam epitaxy. This allows us to investigate the impact of the taper angle on the emission properties of a single InAs/InP QD-NW. At room temperature, a Gaussian far-field emission profile in the telecom O-band with a 30{deg} beam divergence angle is demonstrated from a single InAs QD embedded in a 2{deg} tapered InP NW. Moreover, single photon emission is observed at cryogenic temperature for an off-resonant excitation and the best result, $g^2(0) = 0.05$, is obtained for a 7{deg} tapered NW. This all-encompassing study paves the way for the monolithic growth on silicon of an efficient single photon source in the telecom band based on InAs/InP QD-NWs.
We demonstrate waveguide-integrated superconducting nanowire single-photon detectors on thin-film lithium niobate (LN). Using a 250 um-long NbN superconducting nanowire lithographically defined on top of a 125 um-long LN nanowaveguide, on-chip detection efficiency of 46% is realized with simultaneous high performance in dark count rate and timing jitter. As LN possesses high second-order nonlinear c{hi}(2) and electro-optic properties, an efficient single-photon detector on thin-film LN opens up the possibility to construct small scale fully-integrated quantum photonic chip which includes single-photon sources, filters, tunable quantum gates and detectors.
We demonstrate a monolithic III-V photonic circuit combining a heralded single photon source with a beamsplitter, at room temperature and telecom wavelength. Pulsed parametric down-conversion in an AlGaAs waveguide generates counterpropagating photons, one of which is used to herald the injection of its twin into the beamsplitter. We use this configuration to implement an integrated Hanbury-Brown and Twiss experiment, yielding a heralded second-order correlation $g^{(2)}_{rm her}(0)=0.10 pm 0.02$ that confirms single-photon operation. The demonstrated generation and manipulation of quantum states on a single III-V semiconductor chip opens promising avenues towards real-world applications in quantum information.
Photonic quantum technologies such as quantum cryptography, photonic quantum metrology, photonic quantum simulators and computers will largely benefit from highly scalable and small footprint quantum photonic circuits. To perform fully on-chip quantum photonic operations, three basic building blocks are required: single-photon sources, photonic circuits and single-photon detectors. Highly integrated quantum photonic chips on silicon and related platforms have been demonstrated incorporating only one or two of these basic building blocks. Previous implementations of all three components were mainly limited by laser stray light, making temporal filtering necessary or required complex manipulation to transfer all components onto one chip. So far, a monolithic, simultaneous implementation of all elements demonstrating single-photon operation remains elusive. Here, we present a fully-integrated Hanbury-Brown and Twiss setup on a micron-sized footprint, consisting of a GaAs waveguide embedding quantum dots as single-photon sources, a waveguide beamsplitter and two superconducting nanowire single-photon detectors. This enables a second-order correlation measurement at the single-photon level under both continuous-wave and pulsed resonant excitation.