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In this work, we have demonstrated wide-composition-range b{eta}-(AlxGa1-x)2O3 thin films with record-high Al compositions up to 77% for b{eta}-(AlxGa1-x)2O3 covering bandgaps from 4.9 to 6.4 eV. With optimized thermal annealing conditions, the b{eta}-Ga2O3 binary thin films on sapphire substrates transformed to the b{eta}-(AlGa)2O3 ternary thin films with different compositions. The binary to ternary transformation resulted from the Al atom diffusion from sapphire into the oxide layers; meanwhile, the Ga atoms diffused into sapphire leading to thicker thin films than the original thicknesses. The interdiffusion processes were confirmed by transmission electron microscopy, which enhanced in proportion to the annealing temperature. The strain states of the b{eta}-(AlGa)2O3 films have been analyzed showing reduced in-plane compressive strain with higher annealing temperature; and the film eventually became strain-free when the temperature was 1400 oC corresponding to the Al composition of 77%. The proposed method is promising for the preparation of the b{eta}-(AlGa)2O3 thin films without employing sophisticated direct-growth techniques for alloys.
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We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown b{eta}-(AlxGa1-x)2O3/b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped b{eta}-(AlxGa1-x)2O3 barrier. Electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. Hall sheet charge density of 1.06 x 1013 cm-2 and mobility of 111 cm2/Vs is measured at room temperature. Fabricated transistor showed peak current of 22 mA/mm and on-off ratio of 8 x 106. Sheet resistance of 5.3 k{Omega}/Square is measured at room temperature, which includes contribution from a parallel channel in b{eta}-(AlxGa1-x)2O3.
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We report on low-temperature MOVPE growth of silicon delta-doped b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capacitance-Voltage and Hall techniques. SIMS measurements show that surface segregation is the chief cause of large FWHM in MOVPE-grown films. The surface segregation coefficient (R) is observed to reduce with reduction in the growth temperature. Films grown at 600 {deg}C show an electron concentration of 9.7 x 1012 cm-2 and a FWHM of 3.2 nm. High resolution scanning/transmission electron microscopy of the epitaxial film did not reveal any significant observable degradation in crystal quality of the delta sheet and surrounding regions. Hall measurements of delta-doped film on Fe-doped substrate showed a sheet charge density of 6.1 x 1012 cm-2 and carrier mobility of 83 cm2/V. s. Realization of sharp delta doping profiles in MOVPE-grown b{eta}-Ga2O3 is promising for high performance device applications.
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