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Register a new userAcousto-optic modulation in lithium niobate on sapphire
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Added by
Amir H. Safavi-Naeini
Publication date
2020
fields
Physics
and research's language is
English
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We demonstrate acousto-optic phase modulators in X-cut lithium niobate films on sapphire, detailing the dependence of the piezoelectric and optomechanical coupling coefficients on the crystal orientation. This new platform supports highly confined, strongly piezoelectric mechanical waves without suspensions, making it a promising candidate for broadband and efficient integrated acousto-optic devices, circuits, and systems.
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Acousto-optic interactions involving propagating phonons can break the time-reversal and frequency-modulation symmetry of light. However, conventional acousto-optic modulators based on bulk materials have frequency bandwidth limited to hundreds of megahertz due to their large structural sizes. Here, we experimentally demonstrate gigahertz single-sideband acousto-optic modulation on an etchless lithium niobate integrated platform by using photonic bound states in the continuum. The upper- or lower-sideband modulation of light can be obtained conveniently by choosing specific combinations of input and output channels. Under this scheme, we have realized a 3-GHz frequency shifter, which operates in the C-band with a 3-dB bandwidth of ~35 nm. The extinction ratios of the upper(lower)-sideband modulated light to the lower(upper)-sideband modulated and unmodulated light are >44 (47) and 25 (23) dB in the 3-dB operating bandwidth. The frequency-shifted light can be further processed with amplitude and frequency modulation. Therefore, the demonstrated gigahertz single-sideband acousto-optic modulation can enable many photonic applications such as optical signal processing, sensing, and ion trapping.
We theoretically investigate the use of Rayleigh surface acoustic waves (SAWs) for refractive index modulation in optical waveguides consisting of amorphous dielectrics. Considering low-loss Si$_3$N$_4$ waveguides with a standard core cross section of 4.4$times$0.03 $mu$m$^2$ size, buried 8 $mu$m deep in a SiO$_2$ cladding we compare surface acoustic wave generation in various different geometries via a piezo-active, lead zirconate titanate film placed on top of the surface and driven via an interdigitized transducer (IDT). Using numerical solutions of the acoustic and optical wave equations, we determine the strain distribution of the SAW under resonant excitation. From the overlap of the acoustic strain field with the optical mode field we calculate and maximize the attainable amplitude of index modulation in the waveguide. For the example of a near-infrared wavelength of 840 nm, a maximum shift in relative effective refractive index of 0.7x10$^{-3}$ was obtained for TE polarized light, using an IDT period of 30 - 35 $mu$m, a film thickness of 2.5 - 3.5 $mu$m, and an IDT voltage of 10 V. For these parameters, the resonant frequency is in the range 70 - 85 MHz. The maximum shift increases to 1.2x10$^{-3}$, with a corresponding resonant frequency of 87 MHz, when the height of the cladding above the core is reduced to 3 $mu$m. The relative index change is about 300-times higher than in previous work based on non-resonant proximity piezo-actuation, and the modulation frequency is about 200-times higher. Exploiting the maximum relative index change of 1.2$times$10$^{-3}$ in a low-loss balanced Mach-Zehnder modulator should allow full-contrast modulation in devices as short as 120 $mu$m (half-wave voltage length product = 0.24 Vcm).
Many technologies in quantum photonics require cryogenic conditions to operate. However, the underlying platform behind active components such as switches, modulators and phase shifters must be compatible with these operating conditions. To address this, we demonstrate an electro-optic polarisation converter for 1550nm light at 0.8K in titanium in-diffused lithium niobate waveguides. To do so, we exploit the electro-optic properties of lithium niobate to convert between orthogonal polarisation modes with a fiber-to-fiber transmission >43%. We achieve a modulation depth of 23.6 +/-3.3dB and a conversion voltage-length product of 28.8 V cm. This enables the combination of cryogenic photonics and active components on a single integration platform.
Many applications of metasurfaces require an ability to dynamically change their properties in time domain. Electrical tuning techniques are of particular interest, since they pave a way to on-chip integration of metasurfaces with optoelectronic devices. In this work, we propose and experimentally demonstrate an electro-optic lithium niobate (EO-LN) metasurface that shows dynamic modulations to phase retardation of transmitted light. Quasi-bound states in the continuum (QBIC) are observed from our metasurface. And by applying external electric voltages, the refractive index of the LN is changed by Pockels EO nonlinearity, leading to efficient phase modulations to the transmitted light around the QBIC wavelength. Our EO-LN metasurface opens up new routes for potential applications in the field of displaying, pulse shaping, and spatial light modulating.
Superconducting cavity electro-optics (EO) presents a promising route to coherently convert microwave and optical photons and distribute quantum entanglement between superconducting circuits over long-distance through an optical network. High EO conversion efficiency demands transduction materials with strong Pockels effect and excellent optical transparency. Thin-film Lithium Niobate (TFLN) offers these desired characteristics however so far has only delivered unidirectional conversion with efficiencies on the order of $10^{-5}$, largely impacted by its prominent photorefractive (PR) effect at cryogenic temperatures. Here we show that, by mitigating the PR effect and associated charge-screening effect, the devices conversion efficiency can be enhanced by orders of magnitude while maintaining stable cryogenic operation, thus allowing a demonstration of conversion bidirectionality and accurate quantification of on-chip efficiency. With the optimized monolithic integrated superconducting EO device based on TFLN-on-sapphire substrate, an on-chip conversion efficiency of 1.02% (internal efficiency, 15.2%) is realized. Our demonstration indicates that with further device improvement, it is feasible for TFLN to approach unitary internal conversion efficiency.
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