Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userRaman spectroscopy of ion irradiated SiC: chemical defects, strain, annealing, and oxidation
128
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Raman spectroscopy has been used to identify defective bonding in neon and silicon ion irradiated single crystals of 6H-SiC. Observable differences exist in the C-C bonding region corresponding to different defect structures for neon and silicon ion implantations. Raman spectra of ion irradiated SiC show less tensile strain than neutron irradiations, explained by a residual compressive stress caused by the swelling constrained by the undamaged substrate. Evidence of oxidation during high temperature ion implantation is observed as C-O and Si-O Raman signals. Annealing irradiated SiC while acquiring Raman spectra shows rapid recovery of Si-C bonding, but not a complete recovery of the unirradiated structure. Annealing irradiated SiC causes surface oxidation where unirradiated SiC does not oxidise. Comparisons are made to the apparent radiation resistance of diamond and silicon which have similar crystal structures, but are monatomic, leading to the suggestion that chemical defects are responsible for increased radiation damage in SiC.
rate research
Read More
Gallium selenide (GaSe) is a 2D material with a thickness-dependent gap, strong non-linear optical coefficients and uncommon interband optical selection rules, making it interesting for optoelectronic and spintronic applications. In this work, we monitor the oxidation dynamics of GaSe with thicknesses ranging from 10 to 200 nm using Raman spectroscopy. In ambient temperature and humidity conditions, the intensity of all Raman modes and the luminescence decrease rapidly with moderate exposure to above-gap illumination. Concurrently, several oxidation products appear in the Raman spectra: Ga$_2$Se$_3$, Ga$_2$O$_3$ and amorphous and crystalline selenium. We find that no safe measurement power exists for optical measurements on ultrathin GaSe in ambient conditions. We demonstrate that the simultaneous presence of oxygen, humidity, and above-gap illumination is required to activate this photo-oxidation process, which is attributed to the transfer of photo-generated charge carriers towards aqueous oxygen at the sample surface, generating highly reactive superoxide anions that rapidly degrade the sample and quench the optical response of the material.
Ion-irradiated FeCr alloys are useful for understanding and predicting neutron-damage in the structural steels of future nuclear reactors. Previous studies have largely focused on the structure of irradiation-induced defects, probed by transmission electron microscopy (TEM), as well as changes in mechanical properties. Across these studies, a wide range of irradiation conditions has been employed on samples with different processing histories, which complicates the analysis of the relationship between defect structures and material properties. Furthermore, key properties, such as irradiation-induced changes in thermal transport and lattice strain, are little explored. Here we present a systematic study of Fe3Cr, Fe5Cr and Fe10Cr binary alloys implanted with 20 MeV Fe$^{3+}$ ions to nominal doses of 0.01 dpa and 0.1 dpa at room temperature. Nanoindentation, transient grating spectroscopy (TGS) and X-ray micro-beam Laue diffraction were used to study the changes in hardness, thermal diffusivity and strain in the material as a function of damage and Cr content. Our results suggest that Cr leads to an increased retention of irradiation-induced defects, causing substantial changes in hardness and lattice strain. However, thermal diffusivity varies little with increasing damage and instead degrades significantly with increasing Cr content in the material. We find significant lattice strains even in samples exposed to a nominal displacement damage of 0.01 dpa. The defect density predicted from the lattice strain measurements is significantly higher than that observed in previous TEM studies, suggesting that TEM may not fully capture the irradiation-induced defect population.
We present a comprehensive structural characterization of ferromagnetic SiC single crystals induced by Ne ion irradiation. The ferromagnetism has been confirmed by electron spin resonance and possible transition metal impurities can be excluded to be the origin of the observed ferromagnetism. Using X-ray diffraction and Rutherford backscattering/channeling spectroscopy, we estimate the damage to the crystallinity of SiC which mutually influences the ferromagnetism in SiC.
We show the evolution of Raman spectra with number of graphene layers on different substrates, SiO$_{2}$/Si and conducting indium tin oxide (ITO) plate. The G mode peak position and the intensity ratio of G and 2D bands depend on the preparation of sample for the same number of graphene layers. The 2D Raman band has characteristic line shapes in single and bilayer graphene, capturing the differences in their electronic structure. The defects have a significant influence on the G band peak position for the single layer graphene: the frequency shows a blue shift upto 12 cm$^{-1}$ depending on the intensity of the D Raman band, which is a marker of the defect density. Most surprisingly, Raman spectra of graphene on the conducting ITO plates show a lowering of the G mode frequency by $sim$ 6 cm$^{-1}$ and the 2D band frequency by $sim$ 20 cm$^{-1}$. This red-shift of the G and 2D bands is observed for the first time in single layer graphene.
We grow AlN/4H-SiC and AlN/6H-SiC heterostructures by physical vapor deposition and characterize the heterointerface with nanoscale resolution. Furthermore, we investigate the spatial stress and strain distribution in these heterostructures using confocal Raman spectroscopy. We measure the spectral shifts of various vibrational Raman modes across the heterointerface and along the entire depth of the 4H- and 6H-SiC layers. Using the earlier experimental prediction for the phonon-deformation potential constants, we determine the stress tensor components in SiC as a function of the distance from the AlN/SiC heterointerface. In spite that the lattice parameter of SiC is smaller than that of AlN, the SiC layers are compressively strained at the heterointerface. This counterintuitive behavior is explained by different coefficients of thermal expansion of SiC and AlN when the heterostructures are cooled from growth to room temperature. The compressive stress values are maximum at the heterointerface, approaching one GPa, and relaxes to the equilibrium value on the scale of several tens of microns from the heterointerface.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
