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Register a new userLandau level spectroscopy of Bi$_2$Te$_3$
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Here we report on Landau level spectroscopy in magnetic fields up to 34 T performed on a thin film of topological insulator Bi$_2$Te$_3$ epitaxially grown on a BaF$_2$ substrate. The observed response is consistent with the picture of a direct-gap semiconductor in which charge carriers closely resemble massive Dirac particles. The fundamental band gap reaches $E_g=(175pm 5)$~meV at low temperatures and it is not located on the trigonal axis, thus displaying either six or twelvefold valley degeneracy. Notably, our magneto-optical data do not indicate any band inversion. This suggests that the fundamental band gap is relatively distant from the $Gamma$ point where profound inversion exists andgives rise to relativistic-like surface states of Bi$_2$Te$_3$.
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The electronic and magnetic properties of individual Fe atoms adsorbed on the surface of the topological insulator Bi$_2$Te$_3$(111) are investigated. Scanning tunneling microscopy and spectroscopy prove the existence of two distinct types of Fe species, while our first-principles calculations assign them to Fe adatoms in the hcp and fcc hollow sites. The combination of x-ray magnetic circular dichroism measurements and angular dependent magnetization curves reveals out-of-plane anisotropies for both species with anisotropy constants of $K_{text{fcc}} = (10 pm 4)$ meV/atom and $K_{text{hcp}} = (8 pm 4)$ meV/atom. These values are well in line with the results of calculations.
We study disorder induced topological phase transitions in magnetically doped (Bi, Sb)$_2$Te$_3$ thin films, by using large scale transport simulations of the conductance through a disordered region coupled to reservoirs in the quantum spin Hall regime. Besides the disorder strength, the rich phase diagram also strongly depends on the magnetic exchange field, the Fermi level, and the initial topological state in the undoped and clean limit of the films. In an initially trivial system at non-zero exchange field, varying the disorder strength can induce a sequence of transitions from a normal insulating, to a quantum anomalous Hall, then a spin-Chern insulating, and finally an Anderson insulating state. While for a system with topology initially, a similar sequence, but only starting from the quantum anomalous Hall state, can be induced. Varying the Fermi level we find a similarly rich phase diagram, including transitions from the quantum anomalous Hall to the spin-Chern insulating state via a state that behaves as a mixture of a quantum anomalous Hall and a metallic state, akin to recent experimental reports.
We report on an infrared magneto-spectroscopy study of Pb$_{1-x}$Sn$_x$Se, a topological crystalline insulator. We have examined a set of samples, all in the inverted regime of electronic bands, with the tin composition varying from $x=0.2$ to $0.33$. Our analysis shows that the observed response, composed of a series of interband inter-Landau level excitations, can be interpreted and modelled using the relativistic-like Hamiltonian for three-dimensional massive Dirac electrons, expanded to include diagonal quadratic terms that impose band inversion. In our data, we have not found any clear signature of massless electron states that are present on the surface of Pb$_{1-x}$Sn$_x$Se crystals in the inverted regime. Reasons for this unexpected result are discussed.
We performed x-ray magnetic circular dichroism (XMCD) measurements on heterostructures comprising topological insulators (TIs) of the (Bi,Sb)$_2$(Se,Te)$_3$ family and the magnetic insulator EuS. XMCD measurements allow us to investigate element-selective magnetic proximity effects at the very TI/EuS interface. A systematic analysis reveals that there is neither significant induced magnetism within the TI nor an enhancement of the Eu magnetic moment at such interface. The induced magnetic moments in Bi, Sb, Te, and Se sites are lower than the estimated detection limit of the XMCD measurements of $sim!10^{-3}$ $mu_mathrm{B}$/at.
The interplay between band topology and magnetic order could generate a variety of time-reversal-breaking gapped topological phases with exotic topological quantization phenomena, such as quantum anomalous Hall (QAH) insulators and axion insulators (AxI). Here by combining analytic models and first-principles calculations, we predict QAH and AxI phases can be realized in thin film of an intrinsic antiferromagnetic van der Waal material Mn$_2$Bi$_2$Te$_5$. The phase transition between QAH and AxI is tuned by the layer magnetization, which would provide a promising platform for chiral superconducting phases. We further present a simple and unified continuum model that captures the magnetic topological features, and is generic for Mn$_2$Bi$_2$Te$_5$ and MnBi$_2$Te$_4$ family materials.
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