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Register a new userUltrafast energy relaxation of quantum dot-generated 2D hot electrons
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Through a series of transverse magnetic focusing experiments, we show that hot electrons in a two-dimensional electron gas system undergo an ultrafast relaxation when generated by a quantum dot (QD) instead of a quantum point contact (QPC). We find here that QPC hot electrons were well described by the non-interacting Fermi gas model for excitations up to 1.5 meV above the Fermi level of 7.44 meV, whereas QD hot electrons exhibited an energy loss quadratic to the excitation. The energy relaxation was a sizeable fraction of the tested excitations, up to about 55%. With the proposal that the hot electrons are relaxed by the QD immediately after emission, we present a toy model in which a capacitive coupling between the QD and its leads results in a finite, ultrafast energy relaxation.
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For most optoelectronic applications of graphene a thorough understanding of the processes that govern energy relaxation of photoexcited carriers is essential. The ultrafast energy relaxation in graphene occurs through two competing pathways: carrier-carrier scattering -- creating an elevated carrier temperature -- and optical phonon emission. At present, it is not clear what determines the dominating relaxation pathway. Here we reach a unifying picture of the ultrafast energy relaxation by investigating the terahertz photoconductivity, while varying the Fermi energy, photon energy, and fluence over a wide range. We find that sufficiently low fluence ($lesssim$ 4 $mu$J/cm$^2$) in conjunction with sufficiently high Fermi energy ($gtrsim$ 0.1 eV) gives rise to energy relaxation that is dominated by carrier-carrier scattering, which leads to efficient carrier heating. Upon increasing the fluence or decreasing the Fermi energy, the carrier heating efficiency decreases, presumably due to energy relaxation that becomes increasingly dominated by phonon emission. Carrier heating through carrier-carrier scattering accounts for the negative photoconductivity for doped graphene observed at terahertz frequencies. We present a simple model that reproduces the data for a wide range of Fermi levels and excitation energies, and allows us to qualitatively assess how the branching ratio between the two distinct relaxation pathways depends on excitation fluence and Fermi energy.
Employing time-resolved photoelectron spectroscopy we analyze the relaxation dynamics of hot electrons in the charge density wave / Mott material 1T-TaS_2. At 1.2 eV above the Fermi level we observe a hot electron lifetime of 12 +- 5 fs in the metallic state and of 60 +- 10 fs in the broken symmetry ground state - a direct consequence of the reduced phase space for electron-electron scattering determined by the Mott gap. Boltzmann equation calculations which account for the interaction of hot electrons in a Bloch band with a doublon-holon excitation in the Mott state provide insight into the unoccupied electronic structure in the correlated state.
The mechanisms for spin relaxation in semiconductors are reviewed, and the mechanism prevalent in p-doped semiconductors, namely spin relaxation due to the electron-hole exchange interaction, is presented in some depth. It is shown that the solution of Boltzmann-type kinetic equations allows one to obtain quantitative results for spin relaxation in semiconductors that go beyond the original Bir-Aronov-Pikus relaxation-rate approximation. Experimental results using surface sensitive two-photon photoemission techniques show that the spin relaxation-time of electrons in p-doped GaAs at a semiconductor/metal surface is several times longer than the corresponding bulk spin relaxation-times. A theoretical explanation of these results in terms of the reduced density of holes in the band-bending region at the surface is presented.
An AlAs two-dimensional electron system patterned with an anti-dot lattice exhibits a giant piezoresistance (GPR) effect, with a sign opposite to the piezoresistance observed in the unpatterned region. We trace the origin of this anomalous GPR to the non-uniform strain in the anti-dot lattice and the exclusion of electrons occupying the two conduction band valleys from different regions of the sample. This is analogous to the well-known giant magnetoresistance (GMR) effect, with valley playing the role of spin and strain the role of magnetic field.
Holography relies on the interference between a known reference and a signal of interest to reconstruct both the amplitude and phase of that signal. Commonly performed with photons and electrons, it finds numerous applications in imaging, cryptography and arts. With electrons, the extension of holography to the ultrafast time domain remains a challenge, although it would yield the highest possible combined spatio-temporal resolution. Here, we show that holograms of local electromagnetic fields can be obtained with combined attosecond/nanometer resolution in an ultrafast transmission electron microscope (UEM). Unlike conventional holography, where the signal and the reference are spatially separated and then recombined to interfere, in our method we use electromagnetic fields to split an electron wave function in a quantum coherent superposition of different energy states. In the image plane, spatial modulation of the electron-energy distribution reflects the phase relation between reference and signal fields, which we map via energy-filtered UEM. Beyond imaging applications, this approach allows implementing optically-controlled and spatially-resolved quantum measurements in parallel, providing an efficient and versatile tool for the exploration of electron quantum optics.
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