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Register a new userRole of the ferroelastic strain in the optical absorption of BiVO4
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Bismuth vanadate (BiVO4) has recently been under focus for its potential use in photocatalysis thanks to its well-suited absorption edge in the visible light range. Here, we characterize the optical absorption of a BiVO4 single crystal as a function of temperature and polarization direction by reflectance and transmittance spectroscopy. The optical band gap is found to be very sensitive to temperature, and to the monoclinic-to-tetragonal ferroelastic transition at 523K. The anisotropy, as measured by the difference in absorption edge for light polarized parallel and perpendicular to the principal axis, is reduced from 0.2 eV in the high-temperature tetragonal phase to 0.1 eV at ambient temperature. We show that this evolution is dominantly controlled by the ferroelastic shear strain. These findings provide a route for further optimization of bismuth-vanadate-based light absorbers in photocatalytic devices.
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Compared to AgNbO3 based ceramics, the experimental investigations on the single crystalline AgNbO3, especially the ground state and ferroic domain structures, are not on the same level. Here in this work, based on successfully synthesized AgNbO3 single crystal using flux method, we observed the coexistence of ferroelastic and ferrielectric domain structures by a combination study of polarized light microscopy and piezoresponse force microscope, this finding may provide a new aspect for studying AgNbO3. The result also suggests a weak electromechanical response from the ferrielectric phase of AgNbO3 which is also supported by the transmission electron microscope characterization. Our results reveal that the AgNbO3 single crystal is in a polar ferrielectric phase at room temperature, clarifying its ground state which is controversial from the AgNbO3 ceramic materials.
Multi-crystalline silicon is widely used for producing low-cost and high-efficiency solar cells. During crystal growth and device fabrication, silicon solar cells contain grain boundaries (GBs) which are preferential segregation sites for atomic impurities such as oxygen atoms. GBs can induce charge carriers recombination significantly reducing carrier lifetimes and therefore they can be detrimental for Si device performance. We studied the correlation between structural, energetic and electronic properties of {Sigma}3{111} Si GB in the presence of vacancies, strain and multiple O segregation. The study of the structural and energetic properties of GBs in the presence of strain and vacancies gives an accurate description of the complex mechanisms that control the segregation of oxygen atoms. We analysed tensile and compressive strain and we obtained that local tensile strain around O impurities is very effective for segregation. We also studied the role of multiple O impurities in the presence of Si vacancies finding that the segregation is favorite for those structures which have restored tetrahedral covalent bonds. The presence of vacancies attract atomic impurities in order to restore the electronic stability: the interstitial impurity becomes substitutional. This analysis was the starting point to correlate the change of the electronic properties in {Sigma}3{111}Si GBs with O impurities in the presence of strain and vacancies. For each structure we analysed the density of states and its projection on atoms and states, the band gaps, the segregation energy and their correlation in order to characterise the nature of new energy levels. Actually, knowing the origin of defined electronic states would allow the optimization of materials in order to reduce non-radiative electron-hole recombination avoiding charge and energy losses and therefore improving solar cell efficiency.
The effect of elastic strain on catalytic activity of platinum (Pt) towards oxygen reduction reaction (ORR) is investigated through de-alloyed Pt-Cu thin films; stress evolution in the de-alloyed layer and the mass of the Cu removed are measured in real-time during electrochemical de-alloying of (111)-textured thin-film PtCu (1:1, atom %) electrodes. In situ stress measurements are made using the cantilever-deflection method and nano-gravimetric measurements are made using an electrochemical quartz crystal nanobalance. Upon de-alloying via successive voltammetric sweeps between -0.05 and 1.15 V vs. standard hydrogen electrode, compressive stress develops in the de-alloyed Pt layer at the surface of thin-film PtCu electrodes. The de-alloyed films also exhibit enhanced catalytic activity towards ORR compared to polycrystalline Pt. In situ nanogravimetric measurements reveal that the mass of de-alloyed Cu is approximately 210 +/- 46 ng/cm2, which corresponds to a de-alloyed layer thickness of 1.2 +/- 0.3 monolayers or 0.16 +/- 0.04 nm. The average biaxial stress in the de-alloyed layer is estimated to be 4.95 +/- 1.3 GPa, which corresponds to an elastic strain of 1.47 +/- 0.4%. In addition, density functional theory calculations have been carried out on biaxially strained Pt (111) surface to characterize the effect of strain on its ORR activity; the predicted shift in the limiting potentials due to elastic strain is found to be in good agreement with the experimental shift in the cyclic voltammograms for the dealloyed PtCu thin film electrodes.
Uniaxial and biaxial strain approaches are usually implemented to switch the ferroelastic states, which play a key role in the application of the ferroics and shape memory materials. In this work, by using the first-principles calculations, we found not only uniaxial strain, but also shear strain can induce a novel ferroelastic switching, in which the van der Waals (vdW) layered direction rotates with the ferroelastic transition in layered bulk PdSe2. The shear strain induces ferroelastic switching with three times amplitude smaller than uniaxial strain. The novel three-states ferroelastic switching in layered PdSe2 also occurs under shear strain. Our result shows that the shear strain could be used as an effective approach for manipulating the functionalities of layered materials in potential device applications.
We report on simulations and measurements of the optical absorption of silicon nanowires (NWs) versus their diameter. We first address the simulation of the optical absorption based on two different theoretical methods : the first one, based on the Green function formalism, is useful to calculate the scattering and absorption properties of a single or a finite set of NWs. The second one, based on the Finite Difference Time Domain (FDTD) method is well-adapted to deal with a periodic set of NWs. In both cases, an increase of the onset energy for the absorption is found with increasing diameter. Such effect is experimentally illustrated, when photoconductivity measurements are performed on single tapered Si nanowires connected between a set of several electrodes. An increase of the nanowire diameter reveals a spectral shift of the photocurrent intensity peak towards lower photon energies, that allows to tune the absorption onset from the ultraviolet radiations to the visible light spectrum.
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