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NOM: Network-On-Memory for Inter-Bank Data Transfer in Highly-Banked Memories

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 Publication date 2020
and research's language is English




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Data copy is a widely-used memory operation in many programs and operating system services. In conventional computers, data copy is often carried out by two separate read and write transactions that pass data back and forth between the DRAM chip and the processor chip. Some prior mechanisms propose to avoid this unnecessary data movement by using the shared internal bus in the DRAM chip to directly copy data within the DRAM chip (e.g., between two DRAM banks). While these methods exhibit superior performance compared to conventional techniques, data copy across different DRAM banks is still greatly slower than data copy within the same DRAM bank. Hence, these techniques have limited benefit for the emerging 3D-stacked memories (e.g., HMC and HBM) that contain hundreds of DRAM banks across multiple memory controllers. In this paper, we present Network-on-Memory (NoM), a lightweight inter-bank data communication scheme that enables direct data copy across both memory banks of a 3D-stacked memory. NoM adopts a TDM-based circuit-switching design, where circuit setup is done by the memory controller. Compared to state-of-the-art approaches, NoM enables both fast data copy between multiple DRAM banks and concurrent data transfer operations. Our evaluation shows that NoM improves the performance of data-intensive workloads by 3.8X and 75%, on average, compared to the baseline conventional 3D-stacked DRAM architecture and state-of-the-art techniques, respectively.

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Memories that exploit three-dimensional (3D)-stacking technology, which integrate memory and logic dies in a single stack, are becoming popular. These memories, such as Hybrid Memory Cube (HMC), utilize a network-on-chip (NoC) design for connecting their internal structural organizations. This novel usage of NoC, in addition to aiding processing-in-memory capabilities, enables numerous benefits such as high bandwidth and memory-level parallelism. However, the implications of NoCs on the characteristics of 3D-stacked memories in terms of memory access latency and bandwidth have not been fully explored. This paper addresses this knowledge gap by (i) characterizing an HMC prototype on the AC-510 accelerator board and revealing its access latency behaviors, and (ii) by investigating the implications of such behaviors on system and software designs.
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The current mobile applications have rapidly growing memory footprints, posing a great challenge for memory system design. Insufficient DRAM main memory will incur frequent data swaps between memory and storage, a process that hurts performance, consumes energy and deteriorates the write endurance of typical flash storage devices. Alternately, a larger DRAM has higher leakage power and drains the battery faster. Further, DRAM scaling trends make further growth of DRAMin the mobile space prohibitive due to cost. Emerging non-volatile memory (NVM) has the potential to alleviate these issues due to its higher capacity per cost than DRAM and mini-mal static power. Recently, a wide spectrum of NVM technologies, including phase-change memories (PCM), memristor, and 3D XPoint have emerged. Despite the mentioned advantages, NVM has longer access latency compared to DRAMand NVM writes can incur higher latencies and wear costs. Therefore integration of these new memory technologies in the memory hierarchy requires a fundamental rearchitect-ing of traditional system designs. In this work, we propose a hardware-accelerated memory manager (HMMU) that addresses both types of memory in a flat space address space. We design a set of data placement and data migration policies within this memory manager, such that we may exploit the advantages of each memory technology. By augmenting the system with this HMMU, we reduce the overall memory latency while also reducing writes to the NVM. Experimental results show that our design achieves a 39% reduction in energy consumption with only a 12% performance degradation versus an all-DRAM baseline that is likely untenable in the future.
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