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The structural stability and physical properties of CrVO4 under compression were studied by X-ray diffraction, Raman spectroscopy, optical absorption, resistivity measurements, and ab initio calculations up to 10 GPa. High-pressure X-ray diffraction and Raman measurements show that CrVO4 undergoes a phase transition from the ambient pressure orthorhombic CrVO4-type structure (Cmcm space group, phase III) to the high-pressure monoclinic CrVO4-V phase, which is isomorphic to the wolframite structure. Such a phase transition (CrVO4-type - wolframite), driven by pressure, also was previously observed in indium vanadate. The crystal structure of both phases and the pressure dependence in unit-cell parameters, Raman-active modes, resistivity, and electronic band gap, is reported. Vanadium atoms are sixth-fold coordinated in the wolframite phase, which is related to the collapse in the volume at the phase transition. Besides, we also observed drastic changes in the phonon spectrum, a drop of the band-gap, and a sharp decrease of resistivity. All the observed phenomena are explained with the help of first-principles calculations.
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AVO4 vanadates are materials of technological importance due to their variety of functional properties. They have applications as scintillators, thermophosphors, photocatalysts, cathodoluminescence, and laser-host materials. Studies at HP-HT are helpful for understanding the physical properties of the solid state, in special, the phase behavior of AVO4 materials. For instance, they have contributed to understand the macroscopic properties of vanadates in terms of microscopic mechanisms. A great progress has been made in the last decade towards the study of the pressure-effects on the structural, vibrational, and electronic properties of AVO4 compounds. Thanks to the combination of experimental and theoretical studies, novel metastable phases with interesting physical properties have been discovered and the HP structural sequence followed by AVO4 oxides has been understood. Here, we will review HP studies carried out on the phase behavior of different AVO4 compounds. The studied materials include rare-earth vanadates and other compounds; for example, BiVO4, FeVO4, CrVO4, and InVO4. In particular, we will focus on discussing the results obtained by different research groups, who have extensively studied vanadates up to pressures exceeding 50 GPa. We will make a systematic presentation and discussion of the results reported in the literature. In addition, with the aim of contributing to the improvement of the actual understanding of the high-pressure properties of ternary oxides, the HP behavior of vanadates will be compared with related compounds; including phosphates, chromates, and arsenates. The behavior of nanomaterials under compression will also be briefly described and compared with their bulk counterpart. Finally, the implications of the reported studies on technological developments and geophysics will be commented and possible directions for the future studies will be proposed.
Intrinsic polar metals are rare, especially in oxides, because free electrons screen electric fields in a metal and eliminate the internal dipoles that are needed to break inversion symmetry. Here we use first-principles high-throughput structure screening to predict a new polar metal in bulk and thin film forms. After screening more than 1000 different crystal structures, we find that ordered BiPbTi2O6 can crystallize in three polar and metallic structures, which can be transformed between via pressure or strain. In a heterostructure of layered BiPbTi2O6 and PbTiO3, multiple states with different relative orientations of BiPbTi2O6 polar displacements, and PbTiO3 polarization, can be stabilized. At room temperature, the interfacial coupling enables electric fields to first switch PbTiO3 polarization and subsequently drive 180{deg} change of BiPbTi2O6 polar displacements. At low temperatures, the heterostructure provides a tunable tunnelling barrier and might be used in multi-state memory devices.
We report measurements of the temperature- and pressure-dependent resistance, $R(T,p)$, of a manganin manometer in a $^4$He-gas pressure setup from room temperature down to the solidification temperature of $^4$He ($T_textrm {solid}sim$ 50 K at 0.8 GPa) for pressures, $p$, between 0 GPa and $sim$0.8 GPa. The same manganin wire manometer was also measured in a piston-cylinder cell from 300 K down to 1.8 K and for pressures between 0 GPa to $sim$2 GPa. From these data, we infer the temperature and pressure dependence of the pressure coefficient of manganin, $alpha(T,p)$, defined by the equation $R_p = (1+alpha p) R_0$ where $R_0$ and $R_p$ are the resistance of manganin at ambient pressure and finite pressure, respectively. Our results indicate that upon cooling $alpha$ first decreases, then goes through a broad minimum at $sim$120 K and increases again towards lower temperatures. In addition, we find that $alpha$ is almost pressure-independent for $Tgtrsim$60 K up to $psim$2 GPa, but shows a pronounced $p$ dependence for $Tlesssim$60K. Using this manganin manometer, we demonstrate that $p$ overall decreases with decreasing temperature in the piston-cylinder cell for the full pressure range and that the size of the pressure difference between room temperature and low temperatures ($T=1.8$ K), $Delta p$, decreases with increasing pressure. We also compare the pressure values inferred from the magnanin manometer with the low-temperature pressure, determined from the superconducting transition temperature of elemental lead (Pb). As a result of these data and analysis we propose a practical algorithm to infer the evolution of pressure with temperature in a piston-cylinder cell.
The phase diagram of Zn has been explored up to 140 GPa and 6000 K, by combining optical observations, x-ray diffraction, and ab-initio calculations. In the pressure range covered by this study, Zn is found to retain a hexagonal close-packed crystal symmetry up to the melting temperature. The known decrease of the axial ratio of the hcp phase of Zn under compression is observed in x-ray diffraction experiments from 300 K up to the melting temperature. The pressure at which the axial ratio reaches the square root of 3 value, around 10 GPa, is slightly affected by temperature. When this axial ratio is reached, we observed that single crystals of Zn, formed at high temperature, break into multiple polycrystals. In addition, a noticeable change in the pressure dependence of the axial ratio takes place at the same pressure. Both phenomena could be caused by an isomorphic second-order phase transition induced by pressure in Zn. The reported melt curve extends previous results from 24 to 135 GPa. The pressure dependence obtained for the melting temperature is accurately described up to 135 GPa by using a Simon-Glatzel equation. The determined melt curve agrees with previous low-pressure studies and with shock-wave experiments, with a melting temperature of 5060 K at 135 GPa. Finally, a thermal equation of state is reported, which at room-temperature agrees with the literature.
Nanosize pores can turn semimetallic graphene into a semiconductor and from being impermeable into the most efficient molecular sieve membrane. However, scaling the pores down to the nanometer, while fulfilling the tight structural constraints imposed by applications, represents an enormous challenge for present top-down strategies. Here we report a bottom-up method to synthesize nanoporous graphene comprising an ordered array of pores separated by ribbons, which can be tuned down to the one nanometer range. The size, density, morphology and chemical composition of the pores are defined with atomic precision by the design of the molecular precursors. Our measurements further reveal a highly anisotropic electronic structure, where orthogonal one-dimensional electronic bands with an energy gap of ~1 eV coexist with confined pore states, making the nanoporous graphene a highly versatile semiconductor for simultaneous sieving and electrical sensing of molecular species.
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