Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userOn-Chip Spin-Orbit Controlled Excitation of Quantum Emitters Coupled to Hybrid Plasmonic Nanocircuits
481
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
On-chip realization of complex photonic functionalities is essential for further progress in planar integrated nanophotonics, especially when involving nonclassical light sources such as quantum emitters (QEs). Hybrid plasmonic nanocircuits integrated with QEs have been attracting considerable attention due to the prospects of significantly enhancing QE emission rates and miniaturizing quantum nanophotonic components. Spin-orbit interactions on subwavelength scales have been increasingly explored in both conventional and quantum nanophotonics for realization and utilization of the spin-dependent flow of light. Here, we propose and realize a dielectric-loaded plasmonic nanocircuit consisting of an achiral spin-orbit coupler for unidirectional routing of pump radiation into branched QE-integrated waveguides. We demonstrate experimentally the circular-polarization controlled coupling of 532-nm pump laser light into polymer-loaded branched waveguides followed by the excitation of spatially separated (by a distance of ~ 10 {mu}m) QEs, nanodiamonds, with multiple nitrogen vacancy centres, that are embedded in and efficiently coupled to the corresponding waveguides. The realization of on-chip spin-orbit controlled excitation of different QEs coupled to branched waveguides opens new avenues for designing complex quantum plasmonic nanocircuits exploiting the spin degree of freedom within chiral quantum nanophotonics.
rate research
Read More
Hybrid plasmonic nanoemitters based on the combination of quantum dot emitters (QD) and plasmonic nanoantennas open up new perspectives in the control of light. However, precise positioning of any active medium at the nanoscale constitutes a challenge. Here, we report on the optimal overlap of antennas near-field and active medium whose spatial distribution is controlled via a plasmon-triggered 2-photon polymerization of a photosensitive formulation containing QDs. Au nanoparticles of various geometries are considered. The response of these hybrid nano-emitters is shown to be highly sensitive to the light polarization. Different light emission states are evidenced by photoluminescence measurements. These states correspond to polarization-sensitive nanoscale overlap between the exciting local field and the active medium distribution. The decrease of the QD concentration within the monomer formulation allows trapping of a single quantum dot in the vicinity of the Au particle. The latter objects show polarization-dependent switching in the single-photon regime.
The spontaneous emission rate of dipole emitters close to plasmonic dimers are theoretically studied within a nonlocal hydrodynamic model. A nonlocal model has to be used since quantum emitters in the immediate environment of a metallic nanoparticle probe its electronic structure. Compared to local calculations, the emission rate is significantly reduced. The influence is mostly pronounced if the emitter is located close to sharp edges. We suggest to use quantum emitters to test nonlocal effects in experimentally feasible configurations.
Metallic nanoparticle-on-a-mirror (NPoM) cavities enable extreme field confinement in sub-nm gaps, leading to unrivaled performance for nonlinear processes such as surface-enhanced Raman scattering (SERS). So far, prevailing experimental approaches based on NPoMs have been performed by means of free-space light excitation and collection under oblique incidence, since the fundamental radiatively-coupled NPoM mode does not scatter in the normal direction. Retaining this working principle, here we numerically show that plasmonic cavity modes in NPoM configurations can be efficiently excited in an integrated SERS approach through TM guided modes of silicon nitride (SiN) waveguides. Intensity enhancements beyond 10$^{5}$ can be achieved for gap spacings around 1 nm. So as to reduce unwanted SiN Raman background, the output Stokes signals are transferred to transversely placed waveguides, reaching coupling efficiencies of up to 10%. Geometrical parameters such as the gap thickness as well as the radius and position of the nanoparticle provide full control over the main spectral features, thereby enabling us to engineer and drive the optical response of NPoMs for high-performance SERS in Si-based photonic integrated platforms.
Two-dimensional hexagonal boron nitride (hBN) that hosts bright room-temperature single-photon emitters (SPEs) is a promising material platform for quantum information applications. An important step towards the practical application of hBN is the on-demand, position-controlled generation of SPEs. Several strategies have been reported to achieve the deterministic creation of hBN SPEs. However, they either rely on a substrate nanopatterning procedure that is not compatible with integrated photonic devices or utilize a radiation source that might cause unpredictable damage to hBN and underlying substrates. Here, we report a radiation- and lithography-free route to deterministically activate hBN SPEs by nanoindentation with an atomic force microscope (AFM) tip. The method is applied to thin hBN flakes (less than 25 nm in thickness) on flat silicon-dioxide-silicon substrates that can be readily integrated into on-chip photonic devices. The achieved SPEs yields are above 30% by utilizing multiple indent sizes, and a maximum yield of 36% is demonstrated for the indent size of around 400 nm. Our results mark an important step towards the deterministic creation and integration of hBN SPEs with photonic and plasmonic on-chip devices.
One important building block for future integrated nanophotonic devices is the scalable on-chip interfacing of single photon emitters and quantum memories with single optical modes. Here we present the deterministic integration of a single solid-state qubit, the nitrogen-vacancy (NV) center, with a photonic platform consisting exclusively of SiO$_2$ grown thermally on a Si substrate. The platform stands out by its ultra-low fluorescence and the ability to produce various passive structures such as high-Q microresonators and mode-size converters. By numerical analysis an optimal structure for the efficient coupling of a dipole emitter to the guided mode could be determined. Experimentally, the integration of a preselected NV emitter was performed with an atomic force microscope and the on-chip excitation of the quantum emitter as well as the coupling of single photons to the guided mode of the integrated structure could be demonstrated. Our approach shows the potential of this platform as a robust nanoscale interface of on-chip photonic structures with solid-state qubits.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
