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Register a new userExcitonic fractional quantum Hall hierarchy in Moire heterostructures
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We consider fractional quantum Hall states in systems where two flat Chern number $C=pm 1$ bands are labeled by an approximately conserved valley index and interchanged by time reversal symmetry. At filling factor $ u=1$ this setting admits an unusual hierarchy of correlated phases of excitons, neutral particle-hole pair excitations of a fully valley-polarized `orbital ferromagnet parent state where all electrons occupy a single valley. Excitons experience an effective magnetic field due to the Chern numbers of the underlying bands. This obstructs their condensation in favor of a variety of crystalline orders and gapped and gapless liquid states. All these have the same quantized charge Hall response and are electrically incompressible, but differ in their edge structure, orbital magnetization, and hence valley and thermal responses. We explore the relevance of this scenario for Moire heterostructures of bilayer graphene on a hexagonal boron nitride substrate.
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Measurements of the Hall and dissipative conductivity of a strained Ge quantum well on a SiGe/(001)Si substrate in the quantum Hall regime are reported. We find quantum Hall states in the Composite Fermion family and a precursor signal at filling fraction $ u=5/2$. We analyse the results in terms of thermally activated quantum tunneling of carriers from one internal edge state to another across saddle points in the long range impurity potential. This shows that the gaps for different filling fractions closely follow the dependence predicted by theory. We also find that the estimates of the separation of the edge states at the saddle are in line with the expectations of an electrostatic model in the lowest spin-polarised Landau level (LL), but not in the spin-reversed LL where the density of quasiparticle states is not high enough to accommodate the carriers required.
Twisting moire heterostructures to the flatband regime allows for the formation of strongly correlated quantum states, since the dramatic reduction of the bandwidth can cause the residual electronic interactions to set the principal energy scale. An effective description for such correlated moire heterostructures, derived in the strong-coupling limit at integer filling, generically leads to spin-valley Heisenberg models. Here we explore the emergence and stability of spin liquid behavior in an SU(2)$^{mathrm{spin}}otimes$SU(2)$^{mathrm{valley}}$ Heisenberg model upon inclusion of Hunds-induced and longer-ranged exchange couplings, employing a pseudofermion functional renormalization group approach. We consider two lattice geometries, triangular and honeycomb (relevant to different moire heterostructures), and find, for both cases, an extended parameter regime surrounding the SU(4) symmetric point where no long-range order occurs, indicating a stable realm of quantum spin liquid behavior. For large Hunds coupling, we identify the adjacent magnetic orders, with both antiferromagnetic and ferromagnetic ground states emerging in the separate spin and valley degrees of freedom. For both lattice geometries the inclusion of longer-ranged exchange couplings is found to have both stabilizing and destabilizing effects on the spin liquid regime depending on the sign of the additional couplings.
The entanglement entropy of the $ u = 1/3$ and $ u = 5/2$ quantum Hall states in the presence of short range random disorder has been calculated by direct diagonalization. A microscopic model of electron-electron interaction is used, electrons are confined to a single Landau level and interact with long range Coulomb interaction. For very weak disorder, the values of the topological entanglement entropy are roughly consistent with expected theoretical results. By considering a broader range of disorder strengths, the fluctuation in the entanglement entropy was studied in an effort to detect quantum phase transitions. In particular, there is a clear signature of a transition as a function of the disorder strength for the $ u = 5/2$ state. Prospects for using the density matrix renormalization group to compute the entanglement entropy for larger system sizes are discussed.
We study a model of a quantum dot coupled to a quantum Hall edge of the Laughlin state, taking into account short-range interactions between the dot and the edge. This system has been studied experimentally in electron quantum optics in the context of single particle sources. We consider driving the dot out of equilibrium by a time-dependent bias voltage. We calculate the resulting current on the edge by applying the Kubo formula to the bosonized Hamiltonian. The Hamiltonian of this system can also be mapped to the spin-boson model and in this picture, the current can be perturbatively calculated using the non-interacting blip approximation (NIBA). We show that both methods of solution are in fact equivalent. We present numerics demonstrating that the perturbative approaches capture the essential physics at early times, although they fail to capture the charge quantization (or lack thereof) in the current pulses integrated over long times.
For the fractional quantum Hall states on a finite disc, we study the thermoelectric transport properties under the influence of an edge and its reconstruction. In a recent study on a torus [Phys. Rev. B 101, 241101 (2020)], Sheng and Fu found a universal non-Fermi liquid power-law scaling of the thermoelectric conductivity $alpha_{xy} propto T^{eta}$ for the gapless composite Fermi-liquid state. The exponent $eta sim 0.5$ appears an independence of the filling factors and the details of the interactions. In the presence of an edge, we find the properties of the edge spectrum dominants the low-temperature behaviors and breaks the universal scaling law of the thermoelectric conductivity. In order to consider individually the effects of the edge states, the entanglement spectrum in real space is employed and tuned by varying the area of subsystem. In non-Abelian Moore-Read state, the Majorana neutral edge mode is found to have more significant effect than that of the charge mode in the low temperature.
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