Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userAzimuthal and polar anchoring energies of aligning layers structured by nonlinear laser lithography
41
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
In spite of the fact that there are different techniques in the creation of the high-quality liquid crystals (LCs) alignment by means of various surfaces, the azimuthal and polar anchoring energies as well as the pre-tilt angle are important parameters to all of them. Here, the modified by a certain manner aligning layers, previously formed by nonlinear laser lithography (NLL), having high-quality nano-periodic grooves on Ti surfaces, recently proposed for LC alignment was studied. The change of the scanning speed of NLL in the process of nano-structured Ti surfaces and their further modification by means of ITO-coating, and deposition of polyimide film has enabled different aligning layers, whose main characteristics, namely azimuthal and polar anchoring energies, were measured. For the modified aligning layers, the dependencies of the twist and pre-tilt angles for LC cells filled by nematic E7 ({Delta}{epsilon} > 0) and MLC-6609 ({Delta}{epsilon} < 0) were obtained. Also the contact angle for droplets of isotropic liquid (glycerol), and nematic LCs was measured for the various values of the scanning speed during the laser processing.
rate research
Read More
Plasmonic color printing with semicontinuous metal films is a lithography-free, non-fading, and environment-friendly method of generation of bright colors. Such films are comprised of metal nanoparticles, which resonate at different wavelengths upon light illumination depending on the size and shape of the nanoparticles. To achieve an experimentally demonstrated structure that was optimized in terms of broader color range and increased stability, variable Ag semicontinuous metal films were deposited on a metallic mirror with a sub-wavelength-thick dielectric spacer. Femtosecond laser post-processing was then introduced to extend the color gamut through spectrally induced changes from blue to green, red, and yellow. Long-term stability and durability of the structures were addressed to enable non-fading colors with an optimized overcoating dielectric layer. The thickness of the proposed designs is on the order of 100 nanometers, and it can be deposited on any substrate. These structures generate a broad range of long-lasting colors in reflection that can be applied to real-life artistic or technological applications with a spatial resolution on the order of 0.3 mm or less.
Silicon is an excellent material for microelectronics and integrated photonics with untapped potential for mid-IR optics. Despite broad recognition of the importance of the third dimension, current lithography methods do not allow fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realized with techniques like reactive ion etching. Embedded optical elements, like in glass, electronic devices and better electronic-photonic integration are lacking. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1 micrometer-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has a different optical index than unmodified parts, which enables numerous photonic devices. Optionally, these parts are chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface, i.e., in-chip microstructures for microfluidic cooling of chips, vias, MEMS, photovoltaic applications and photonic devices that match or surpass the corresponding state-of-the-art device performances.
Laser polymerization has emerged as a direct writing technique allowing the fabrication of complex 3D structures with microscale resolution. The technique provides rapid prototyping capabilities for a broad range of applications, but to meet the growing interest in 3D nanoscale structures the resolution limits need to be pushed beyond the 100 nm benchmark, which is challenging in practical implementations. As a possible path towards this goal, a post processing of laser polymerized structures is presented. Precise control of the cross-sectional dimensions of structural elements as well as tuning of an overall size of the entire 3D structure was achieved by combining isotropic plasma etching and pyrolysis. The smallest obtainable feature sizes are mostly limited by the mechanical properties of the polymerized resist and the geometry of 3D structure. Thus the demonstrated post processing steps open new avenues to explore free form 3D structures at the nanoscale.
Recent studies on the solvation of atomistic and nanoscale solutes indicate that a strong coupling exists between the hydrophobic, dispersion, and electrostatic contributions to the solvation free energy, a facet not considered in current implicit solvent models. We suggest a theoretical formalism which accounts for coupling by minimizing the Gibbs free energy of the solvent with respect to a solvent volume exclusion function. The resulting differential equation is similar to the Laplace-Young equation for the geometrical description of capillary interfaces, but is extended to microscopic scales by explicitly considering curvature corrections as well as dispersion and electrostatic contributions. Unlike existing implicit solvent approaches, the solvent accessible surface is an output of our model. The presented formalism is illustrated on spherically or cylindrically symmetrical systems of neutral or charged solutes on different length scales. The results are in agreement with computer simulations and, most importantly, demonstrate that our method captures the strong sensitivity of solvent expulsion and dewetting to the particular form of the solvent-solute interactions.
Despite the fact that the resolution of conventional contact/proximity lithography can reach feature sizes down to ~0.5-0.6 micrometers, the accurate control of the linewidth and uniformity becomes already very challenging for gratings with periods in the range of 1-2 {mu}m. This is particularly relevant for the exposure of large areas and wafers thinner than 300{mu}m. If the wafer or mask surface is not fully flat due to any kind of defects, such as bowing/warpage or remaining topography of the surface in case of overlay exposures, noticeable linewidth variations or complete failure of lithography step will occur. We utilized the newly developed Displacement Talbot lithography to pattern gratings with equal lines and spaces and periods in the range of 1.0 to 2.4 {mu}m. The exposures in this lithography process do not require contact between the mask and the wafer, which makes it essentially insensitive to surface planarity and enables exposures with very high linewidth uniformity on thin and even slightly deformed wafers. We demonstrated pattern transfer of such exposures into Si substrates by reactive ion etching using the Bosch process. An etching depth of 30 {mu}m or more for the whole range of periods was achieved, which corresponds to very high aspect ratios up to 60:1. The application of the fabricated gratings in phase contrast x-ray imaging is presented.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
