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Register a new userConductance switching at the nanoscale of diarylethene derivatives self-assembled monolayers on La$_{0.7}$Sr$_{0.3}$MnO$_3$
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Dominique Vuillaume
Publication date
2020
fields
Physics
and research's language is
English
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We report on the phosphonic acid route for the grafting of functional molecules, optical switch (dithienylethene diphosphonic acid, DDA), on La0.7Sr0.3MnO3 (LSMO). Compact self-assembled monolayers (SAMs) of DDA are formed on LSMO as studied by topographic atomic force microscopy (AFM), ellipsometry, water contact angle and X-ray photoemission spectroscopy (XPS). The conducting AFM measurements show that the electrical conductance of LSMO/DDA is about 3 decades below that of the bare LSMO substrate. Moreover, the presence of the DDA SAM suppresses the known conductance switching of the LSMO substrate that is induced by mechanical and/or bias constraints during C-AFM measurements. A partial light-induced conductance switching between the open and closed forms of the DDA is observed for the LSMO/DDA/C-AFM tip molecular junctions (closed/open conductance ratio of about 8). We show that, in the case of long-time exposition to UV light, this feature can be masked by a non-reversible decrease (a factor of about 15) of the conductance of the LSMO electrode.
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Using polarized neutron reflectometry (PNR), we observe an induced magnetization of 75$pm$ 25 kA/m at 10 K in a La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO)/BiFeO$_3$ superlattice extending from the interface through several atomic layers of the BiFeO$_3$ (BFO). The induced magnetization in BFO is explained by density functional theory, where the size of bandgap of BFO plays an important role. Considering a classical exchange field between the LSMO and BFO layers, we further show that magnetization is expected to extend throughout the BFO, which provides a theoretical explanation for the results of the neutron scattering experiment.
The magnetic dead layers in films a few nanometers thick are investigated for La$_{0.7}$Sr$_{0.3}$MnO$_3$ on (001)-oriented SrTiO$_3$ (STO), LaAlO$_3$ (LAO) and (LaAlO$_3$)$_{0.3}$(Sr$_2$TaAlO$_6$)$_{0.7}$ (LSAT) substrates. An anomalous moment found to persist above the Curie temperature of the La$_{0.7}$Sr$_{0.3}$MnO$_3$ films is not attributed to the films, but to oxygen vacancies at or near the surface of the substrate. The contribution to the moment from the substrate is as high as 20 $mu$B/nm$^2$ in the case of STO or LSAT. The effect is increased by adding an STO cap layer. Taking this d-zero magnetism into account, extrapolated magnetic dead layer thicknesses of 0.8 nm, 1.5 nm and 3.0 nm are found for the manganite films grown on LSAT, STO and LAO substrates, respectively. An STO cap layer eliminates the LSMO dead layer.
Charge transfer induced interfacial ferromagnetism and its impact on the exchange bias effect in La$_{0.7}$Sr$_{0.3}$MnO$_3$/NdNiO$_3$ correlated oxide heterostructures were investigated by soft x-ray absorption and x-ray magnetic circular dichroism spectra in a temperature range from 10 to 300 K. Besides the antiferromagnetic Ni$_3^+$ cations which are naturally part of the NdNiO$_3$ layer, Ni$_2^+$ ions are formed at the interface due to a charge transfer mechanism involving the Mn element of the adjacent layer. They exhibit a ferromagnetic behavior due to the exchange coupling to the Mn$_4^+$ ions in the La$_{0.7}$Sr$_{0.3}$MnO$_3$ layer. This can be seen as detrimental to the strength of the unidirectional anisotropy since a significant part of the interface does not contribute to the pinning of the ferromagnetic layer. By analyzing the line shape changes of the x-ray absorption at the Ni L$_{2,3}$ edges, the metal-insulator transition of the NdNiO$_3$ layer is resolved in an element specific manner. This phase transition is initiated at about 120 K, way above the paramagnetic to antiferromagnetic transition of NdNiO$_3$ layer which measured to be 50 K. Exchange bias and enhanced coercive fields were observed after field cooling the sample through the Neel temperature of the NdNiO$_3$ layer. Different from La$_{0.7}$Sr$_{0.3}$MnO$_3$/LaNiO$_3$, the exchange bias observed in La$_{0.7}$Sr$_{0.3}$MnO$_3$/NdNiO$_3$ is due to the antiferromagnetism of NdNiO$_3$ and the frustration at the interface. These results suggest that reducing the interfacial orbital hybridization may be used as a tunable parameter for the strength of the exchange bias effect in all-oxide heterostructures which exhibit a charge transfer mechanism.
We report on first principles calculations of the electronic structure of La$_{0.7}$Sr$_{0.3}$MnO$_{3}$/SrTiO$_{3}$ junction with two possible types of interface terminations. We find that the La$_{0.7}$Sr$_{0.3}$O/TiO$_{2}$ interface preserves the interlayer ferromagnetic coupling between the interface MnO$_{2}$ layer and the bulk. The other interface, MnO$_{2}$/SrO, favours antiferromagnetic coupling with the bulk. By inserting two unit cells of undoped LaMnO$_{3}$ at the interface the ferromagnetism is recovered. This is understood in terms of the doping level and the mobility of carriers near the interface.
The viscous Gilbert damping parameter governing magnetization dynamics is of primary importance for various spintronics applications. Although, the damping constant is believed to be anisotropic by theories. It is commonly treated as a scalar due to lack of experimental evidence. Here, we present an elaborate angle dependent broadband ferromagnetic resonance study of high quality epitaxial La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ films. Extrinsic effects are suppressed and we show convincing evidence of anisotropic damping with twofold symmetry at room temperature. The observed anisotropic relaxation is attributed to the magnetization orientation dependence of the band structure. In addition, we demonstrated that such anisotropy can be tailored by manipulating the stain. This work provides new insights to understand the mechanism of magnetization relaxation.
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