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Register a new userProgress Towards a Capacitively Mediated CNOT Between Two Charge Qubits in Si/SiGe
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Fast operations, an easily tunable Hamiltonian, and a straightforward two-qubit interaction make charge qubits a useful tool for benchmarking device performance and exploring two-qubit dynamics. Here, we tune a linear chain of four Si/SiGe quantum dots to host two double dot charge qubits. Using the capacitance between the double dots to mediate a strong two-qubit interaction, we simultaneously drive coherent transitions to generate correlations between the qubits. We then sequentially pulse the qubits to drive one qubit conditionally on the state of the other. We find that a conditional $pi$-rotation can be driven in just 74 ps with a modest fidelity demonstrating the possibility of two-qubit operations with a 13.5 GHz clockspeed.
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We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross-talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity in this system. Interestingly, with character randomized benchmarking, the two-qubit CPhase gate fidelity can be obtained by studying the additional decay induced by interleaving the CPhase gate in a reference sequence of single-qubit gates only. This work sets the stage for further improvements in all the relevant gate fidelities in silicon spin qubits beyond the error threshold for fault-tolerant quantum computation.
We study the time-fluctuating magnetic gradient noise mechanisms in pairs of Si/SiGe quantum dots using exchange echo noise spectroscopy. We find through a combination of spectral inversion and correspondence to theoretical modeling that quadrupolar precession of the $^{73}$Ge nuclei play a key role in the spin-echo decay time $T_2$, with a characteristic dependence on magnetic field and the width of the Si quantum well. The $^{73}$Ge noise peaks appear at the fundamental and first harmonic of the $^{73}$Ge Larmor resonance, superimposed over $1/f$ noise due to $^{29}$Si dipole-dipole dynamics, and are dependent on material epitaxy and applied magnetic field. These results may inform the needs of dynamical decoupling when using Si/SiGe quantum dots as qubits in quantum information processing devices.
The realization of a coherent interface between distant charge or spin qubits in semiconductor quantum dots is an open challenge for quantum information processing. Here we demonstrate both resonant and non-resonant photon-mediated coherent interactions between double quantum dot charge qubits separated by several tens of micrometers. We present clear spectroscopic evidence of the collective enhancement of the resonant coupling of two qubits. With both qubits detuned from the resonator we observe exchange coupling between the qubits mediated by virtual photons. In both instances pronounced bright and dark states governed by the symmetry of the qubit-field interaction are found. Our observations are in excellent quantitative agreement with master-equation simulations. The extracted two-qubit coupling strengths significantly exceed the linewidths of the combined resonator-qubit system. This indicates that this approach is viable for creating photon-mediated two-qubit gates in quantum dot based systems.
We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fast, single-shot charge measurement, reliably extracts an energy in the limits of both large and small splittings. We perform this technique on an undoped, accumulation-mode Si/SiGe triple-quantum dot and find that the measured splitting varies smoothly as a function of confinement gate biases. Not only does this demonstration prove the value of having an $in~situ$ excited-state measurement technique as part of a standard tune-up procedure, it also suggests that in typical Si/SiGe quantum dot devices, spin-blockade can be limited by lateral orbital excitation energy rather than valley splitting.
We give analytical solutions for the time-optimal synthesis of entangling gates between indirectly coupled qubits 1 and 3 in a linear spin chain of three qubits subject to an Ising Hamiltonian interaction with equal coupling $J$ plus a local magnetic field acting on the intermediate qubit. The energy available is fixed, but we relax the standard assumption of instantaneous unitary operations acting on single qubits. The time required for performing an entangling gate which is equivalent, modulo local unitary operations, to the $mathrm{CNOT}(1, 3)$ between the indirectly coupled qubits 1 and 3 is $T=sqrt{3/2} J^{-1}$, i.e. faster than a previous estimate based on a similar Hamiltonian and the assumption of local unitaries with zero time cost. Furthermore, performing a simple Walsh-Hadamard rotation in the Hlibert space of qubit 3 shows that the time-optimal synthesis of the $mathrm{CNOT}^{pm}(1, 3)$ (which acts as the identity when the control qubit 1 is in the state $ket{0}$, while if the control qubit is in the state $ket{1}$ the target qubit 3 is flipped as $ket{pm}rightarrow ket{mp}$) also requires the same time $T$.
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