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Register a new userStrain induced magnetic transition in CaMnO$_3$ ultra thin films
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Solange Di Napoli Dr
Publication date
2020
fields
Physics
and research's language is
English
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The effect of high tensile strain and low dimensionality on the magnetic and electronic properties of CaMnO$_3$ ultrathin films, epitaxially grown on SrTiO$_3$ substrates, are experimentally studied and theoretically analyzed. By means of ab initio calculations, we find that, both, the high strain produced by the substrate and the presence of the free surface contribute to the stabilization of an in-plane ferromagnetic coupling, giving rise to a non-zero net magnetic moment in the ultrathin films. Coupled with this change in the magnetic order we find an insulator-metal transition triggered by the quantum confinement and the tensile epitaxial strain. Accordingly, our magnetic measurements in 3nm ultrathin films show a ferromagnetic hysteresis loop, absent in the bulk compound due to its G-type antiferromagnetic structure.
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It has been well established that both in bulk at ambient pressure and for films under modest strains, cubic SrCoO$_{3-delta}$ ($delta < 0.2$) is a ferromagnetic metal. Recent theoretical work, however, indicates that a magnetic phase transition to an antiferromagnetic structure could occur under large strain accompanied by a metal-insulator transition. We have observed a strain-induced ferromagnetic to antiferromagnetic phase transition in SrCoO$_{3-delta}$ films grown on DyScO$_3$ substrates, which provide a large tensile epitaxial strain, as compared to ferromagnetic films under lower tensile strain on SrTiO$_3$ substrates. Magnetometry results demonstrate the existence of antiferromagnetic spin correlations and neutron diffraction experiments provide a direct evidence for a G-type antiferromagnetic structure with Neel temperatures between $T_N sim 135,pm,10,K$ and $sim 325,pm,10,K$ depending on the oxygen content of the samples. Therefore, our data experimentally confirm the predicted strain-induced magnetic phase transition to an antiferromagnetic state for SrCoO$_{3-delta}$ thin films under large epitaxial strain.
We report on the observation of metallic behavior in thin films of oxygen-deficient SrTiO$_3$ - down to 9 unit cells - when coherently strained on (001) SrTiO$_3$ or DyScO$_3$-buffered (001) SrTiO$_3$ substrates. These films have carrier concentrations of up to 2$times10^{22}$ cm$^{-3}$ and mobilities of up to 19,000 cm$^2$/V-s at 2 K. There exists a non-conducting layer in our SrTiO$_{3-delta}$ films that is larger in films with lower carrier concentrations. This non-conducting layer can be attributed to a surface depletion layer due to a Fermi level pinning potential. The depletion width, transport, and structural properties are not greatly affected by the insertion of a DyScO$_3$ buffer between the SrTiO$_3$ film and SrTiO$_3$ substrate.
We use first-principles calculations to investigate the stability of bi-axially strained textit{Pnma} perovskite CaMnO$_3$ towards the formation of oxygen vacancies. Our motivation is provided by promising indications that novel material properties can be engineered by application of strain through coherent heteroepitaxy in thin films. While it is usually assumed that such epitaxial strain is accommodated primarily by changes in intrinsic lattice constants, point defect formation is also a likely strain relaxation mechanism. This is particularly true at the large strain magnitudes ($>$4%) which first-principles calculations often suggest are required to induce new functionalities. We find a strong dependence of oxygen vacancy defect formation energy on strain, with tensile strain lowering the formation energy consistent with the increasing molar volume with increasing oxygen deficiency. In addition, we find that strain differentiates the formation energy for different lattice sites, suggesting its use as a route to engineering vacancy ordering in epitaxial thin films.
LiOsO3 is the first experimentally confirmed polar metal. Previous works suggested that the ground state of LiOsO$_3$ is just close to the critical point of metal-insulator transition. In this work the electronic state of LiOsO$_3$ is tuned by epitaxial biaxial strain, which undergoes the Slater-type metal-insulator transition under tensile strain, i.e., the G-type antiferromagnetism emerges. The underlying mechanism of bandwidth tuning can be extended to its sister compound NaOsO$_3$, which shows an opposite transition from a antiferromagnetic insulator to a nonmagnetic metal under hydrostatic pressure. Our work suggests a feasible route for the manipulation of magnetism and conductivity of polar metal LiOsO$_3$.
Transition-metal oxides with an ABO$_3$ perovskite structure exhibit strongly entangled structural and electronic degrees of freedom and thus, one expects to unveil exotic phases and properties by acting on the lattice through various external stimuli. Using the Jahn-Teller active praseodymium vanadate Pr$^{3+}$V$^{3+}$O$_3$ compound as a model system, we show that PrVO$_3$ Neel temperature T$_N$ can be raised by 40 K with respect to the bulk when grown as thin films. Using advanced experimental techniques, this enhancement is unambiguously ascribed to a tetragonality resulting from the epitaxial compressive strain experienced by the films. First-principles simulations not only confirm experimental results, but they also reveal that the strain promotes an unprecedented orbital-ordering of the V$^{3+}$ d electrons, strongly favouring antiferromagnetic interactions. These results show that an accurate control of structural aspects is the key for unveiling unexpected phases in oxides.
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