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Register a new userRevisiting the Possible 4f7 5d1 Ground State of Gd Impurities in SmB6 by Electron Spin Resonance
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The search for topological states in strongly correlated electron systems has renewed the interest in the Kondo insulator SmB6. One of the most intriguing previous results was an anomalous electron spin resonance spectrum in Gd-doped SmB6. This spectrum was attributed to Gd2+ ions because it could be very well decribed by a model considering a change in the valence from Gd3+ to Gd2+, a dynamic Jahn-Teller effect and a 4f7 5d1 ground state in the Hamiltonian. In our work, we have revisited this scenario using electron spin resonance and energy dispersive X-ray spectroscopy measurements. Our results suggest that the resonance is produced by Gd2+ ions; however the resonance stems from an extrinsic oxide impurity phase that lies on the surface of the crystal.
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The CeIn3-xSnx cubic heavy fermion system presents an antiferromagnetic transition at T_N = 10 K, for x = 0, that decreases continuously down to 0 K upon Sn substitution at a critical concentration of x_c ~ 0.65. In the vicinity of T_N -> 0 the system shows non-Fermi liquid behavior due to antiferromagnetic critical fluctuations. For a high Sn content, x > 2.2, intermediate valence effects are present. In this work we show that Gd3+-doped electron spin resonance (ESR) probes a change in the character of the Ce 4f electron, as a function of Sn substitution. The Gd3+ ESR results indicate a transition of the Ce 4f spin behavior from localized to itinerant. Near the quantum critical point, on the antiferromagnetic side of the magnetic phase diagram, both localized and itinerant behaviors coexist.
Pr 4f electronic states in Pr-based filled skutterudites PrT4X12(T=Fe and Ru; X=P and Sb) have been studied by high-resolution bulk-sensitive Pr 3d-4f resonance photoemission. A very strong spectral intensity is observed just below the Fermi level in the heavy-fermion system PrFe4P12. The increase of its intensity at lower temperatures is observed. We speculate that this is the Kondo resonance of Pr, the origin of which is attributed to the strong hybridization between the Pr 4f and the conduction electrons.
Materials containing non-Kramers magnetic ions can show unusual quantum excitations because of the exact mapping of the two-singlet crystal-field ground state to a quantum model of Ising spins in a transverse magnetic field. Here, we model the magnetic excitation spectrum of garnet-structured Ho3Ga5O12, which has a two-singlet crystal-field ground state. We use a reaction-field approximation to explain published inelastic neutron-scattering data [Zhou et al., Phys. Rev. B 78, 140406(R) (2008)] using a three-parameter model containing the magnetic dipolar interaction, the two-singlet crystal-field splitting, and the nuclear hyperfine coupling. Our study clarifies the magnetic Hamiltonian of Ho3Ga5O12, reveals that the nuclear hyperfine interaction drives magnetic ordering in this system, and provides a framework for quantitative analysis of magnetic excitation spectra of materials with singlet crystal-field ground states.
The proximity effect at the interface between a topological insulator (TI) and a superconductor is predicted to give rise to chiral topological superconductivity and Majorana fermion excitations. In most TIs studied to date, however, the conducting bulk states have overwhelmed the transport properties and precluded the investigation of the interplay of the topological surface state and Cooper pairs. Here, we demonstrate the superconducting proximity effect in the surface state of SmB6 thin films which display bulk insulation at low temperatures. The Fermi velocity in the surface state deduced from the proximity effect is found to be as large as 10^5 m/s, in good agreement with the value obtained from a separate transport measurement. We show that high transparency between the TI and a superconductor is crucial for the proximity effect. The finding here opens the door to investigation of exotic quantum phenomena using all-thin-film multilayers with high-transparency interfaces.
We calculate the carrier density dependent ground state properties of graphene in the presence of random charged impurities in the substrate taking into account disorder and interaction effects non-perturbatively on an equal footing in a self-consistent theoretical formalism. We provide detailed quantitative results on the dependence of the disorder-induced spatially inhomogeneous two-dimensional carrier density distribution on the external gate bias, the impurity density, and the impurity location. We find that the interplay between disorder and interaction is strong, particularly at lower impurity densities. We show that for the currently available typical graphene samples, inhomogeneity dominates graphene physics at low ($lesssim 10^{12}$ cm$^{-2}$) carrier density with the density fluctuations becoming larger than the average density.
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