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Register a new userVariational projector-augmented wave method: a full-potential approach for electronic structure calculations in solid-state physics
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Mi-Song Dupuy
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In solid-state physics, energies of crystals are usually computed with a plane-wave discretization of Kohn-Sham equations. However the presence of Coulomb singularities requires the use of large plane-wave cut-offs to produce accurate numerical results. In this paper, an analysis of the plane-wave convergence of the eigenvalues of periodic linear Hamiltonians with Coulomb potentials using the variational projector-augmented wave (VPAW) method is presented. In the VPAW method, an invertible transformation is applied to the original eigenvalue problem, acting locally in balls centered at the singularities. In this setting, a generalized eigenvalue problem needs to be solved using plane-waves. We show that cusps of the eigenfunctions of the VPAW eigenvalue problem at the positions of the nuclei are significantly reduced. These eigenfunctions have however a higher-order derivative discontinuity at the spheres centered at the nuclei. By balancing both sources of error, we show that the VPAW method can drastically improve the plane-wave convergence of the eigenvalues with a minor additional computational cost. Numerical tests are provided confirming the efficiency of the method to treat Coulomb singularities.
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In Kohn-Sham electronic structure computations, wave functions have singularities at nuclear positions. Because of these singularities, plane-wave expansions give a poor approximation of the eigenfunctions. In conjunction with the use of pseudo-potentials, the PAW (projector augmented-wave) method circumvents this issue by replacing the original eigenvalue problem by a new one with the same eigenvalues but smoother eigenvectors. Here a slightly different method, called VPAW (variational PAW), is proposed and analyzed. This new method allows for a better convergence with respect to the number of plane-waves. Some numerical tests on an idealized case corroborate this efficiency.
In this article, a numerical analysis of the projector augmented-wave (PAW) method is presented, restricted to the case of dimension one with Dirac potentials modeling the nuclei in a periodic setting. The PAW method is widely used in electronic ab initio calculations, in conjunction with pseudopotentials. It consists in replacing the original electronic Hamiltonian $H$ by a pseudo-Hamiltonian $H^{PAW}$ via the PAW transformation acting in balls around each nuclei. Formally, the new eigenvalue problem has the same eigenvalues as $H$ and smoother eigenfunctions. In practice, the pseudo-Hamiltonian $H^{PAW}$ has to be truncated, introducing an error that is rarely analyzed. In this paper, error estimates on the lowest PAW eigenvalue are proved for the one-dimensional periodic Schrodinger operator with double Dirac potentials.
In this paper, we construct an efficient numerical scheme for full-potential electronic structure calculations of periodic systems. In this scheme, the computational domain is decomposed into a set of atomic spheres and an interstitial region, and different basis functions are used in different regions: radial basis functions times spherical harmonics in the atomic spheres and plane waves in the interstitial region. These parts are then patched together by discontinuous Galerkin (DG) method. Our scheme has the same philosophy as the widely used (L)APW methods in materials science, but possesses systematically spectral convergence rate. We provide a rigorous a priori error analysis of the DG approximations for the linear eigenvalue problems, and present some numerical simulations in electronic structure calculations.
The so-called local density approximation plus the multi-orbital mean-field Hubbard model (LDA+U) has been implemented within the all-electron projector augmented-wave method (PAW), and then used to compute the insulating antiferromagnetic ground state of NiO and its optical properties. The electronic and optical properties have been investigated as a function of the Coulomb repulsion parameter U. We find that the value obtained from constrained LDA (U=8 eV) is not the best possible choice, whereas an intermediate value (U=5 eV) reproduces the experimental magnetic moment and optical properties satisfactorily. At intermediate U, the nature of the band gap is a mixture of charge transfer and Mott-Hubbard type, and becomes almost purely of the charge-transfer type at higher values of U. This is due to the enhancement of the oxygen 2p states near the top of the valence states with increasing U value.
Scaling of semiconductor devices has reached a stage where it has become absolutely imperative to consider the quantum mechanical aspects of transport in these ultra small devices. In these simulations, often one excludes a rigorous band structure treatment, since it poses a huge computational challenge. We have proposed here an efficient method for calculating full three-dimensionally coupled quantum transport in nanowire transistors including full band structure. We have shown the power of the method by simulating hole transport in p-type Ge nanowire transistors. The hole band structure obtained from our nearest neighbor sp3s* tight binding Hamiltonian agrees well qualitatively with more complex and accurate calculations that take third nearest neighbors into account. The calculated I-V results show how shifting of the energy bands due to confinement can be accurately captured only in a full band full quantum simulation.
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