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Register a new userSuppressed-gap millimetre wave kinetic inductance detectors using DC-bias current
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In this study, we evaluate the suitability of using DC-biased aluminium resonators as low-frequency kinetic inductance detectors operating in the frequency range of 50 - 120 GHz. Our analysis routine for supercurrent-biased resonators is based on the Usadel equations and gives outputs including density of states, complex conductivities, transmission line properties, and quasiparticle lifetimes. Results from our analysis confirm previous experimental observations on resonant frequency tuneability and retention of high quality factor. Crucially, our analysis suggests that DC-biased resonators demonstrate significantly suppressed superconducting density of states gap. Consequently these resonators have lower frequency detection threshold and are suitable materials for low-frequency kinetic inductance detectors.
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Microwave Kinetic Inductance Detectors (MKIDs) provide a compelling path forward to the large-format polarimeter, imaging, and spectrometer arrays needed for next-generation experiments in millimeter-wave cosmology and astronomy. We describe the development of feedhorn-coupled MKID detectors for the TolTEC millimeter-wave imaging polarimeter being constructed for the 50-meter Large Millimeter Telescope (LMT). Observations with TolTEC are planned to begin in early 2019. TolTEC will comprise $sim$7,000 polarization sensitive MKIDs and will represent the first MKID arrays fabricated and deployed on monolithic 150 mm diameter silicon wafers -- a critical step towards future large-scale experiments with over $10^5$ detectors. TolTEC will operate in observational bands at 1.1, 1.4, and 2.0 mm and will use dichroic filters to define a physically independent focal plane for each passband, thus allowing the polarimeters to use simple, direct-absorption inductive structures that are impedance matched to incident radiation. This work is part of a larger program at NIST-Boulder to develop MKID-based detector technologies for use over a wide range of photon energies spanning millimeter-waves to X-rays. We present the detailed pixel layout and describe the methods, tools, and flexible design parameters that allow this solution to be optimized for use anywhere in the millimeter and sub-millimeter bands. We also present measurements of prototype devices operating in the 1.1 mm band and compare the observed optical performance to that predicted from models and simulations.
We show measurements of thermal kinetic inductance detectors (TKID) intended for millimeter wave cosmology in the 200-300 GHz atmospheric window. The TKID is a type of bolometer which uses the kinetic inductance of a superconducting resonator to measure the temperature of the thermally isolated bolometer island. We measure bolometer thermal conductance, time constant and noise equivalent power. We also measure the quality factor of our resonators as the bath temperature varies to show they are limited by effects consistent with coupling to two level systems.
In Kinetic Inductance Detectors (KIDs) and other similar applications of superconducting microresonators, both the large and small-signal behaviour of the device may be affected by electrothermal feedback. Microwave power applied to read out the device is absorbed by and heats the superconductor quasiparticles, changing the superconductor conductivity and hence the readout power absorbed in a positive or negative feedback loop. In this work, we explore numerically the implications of an extensible theoretical model of a generic superconducting microresonator device for a typical KID, incorporating recent work on the power flow between superconductor quasiparticles and phonons. This model calculates the large-signal (changes in operating point) and small-signal behaviour of a device, allowing us to determine the effect of electrothermal feedback on device responsivity and noise characteristics under various operating conditions. We also investigate how thermally isolating the device from the bath, for example by designing the device on a membrane only connected to the bulk substrate by thin legs, affects device performance. We find that at a typical device operating point, positive electrothermal feedback reduces the effective thermal conductance from the superconductor quasiparticles to the bath, and so increases responsivity to signal (pair-breaking) power, increases noise from temperature fluctuations, and decreases the Noise Equivalent Power (NEP). Similarly, increasing the thermal isolation of the device while keeping the quasiparticle temperature constant decreases the NEP, but also decreases the device response bandwidth.
Large ultra-sensitive detector arrays are needed for present and future observatories for far infra-red, submillimeter wave (THz), and millimeter wave astronomy. With increasing array size, it is increasingly important to control stray radiation inside the detector chips themselves, the surface wave. We demonstrate this effect with focal plane arrays of 880 lens-antenna coupled Microwave Kinetic Inductance Detectors (MKIDs). Presented here are near field measurements of the MKID optical response versus the position on the array of a reimaged optical source. We demonstrate that the optical response of a detector in these arrays saturates off-pixel at the $sim-30$ dB level compared to the peak pixel response. The result is that the power detected from a point source at the pixel position is almost identical to the stray response integrated over the chip area. With such a contribution, it would be impossible to measure extended sources, while the point source sensitivity is degraded due to an increase of the stray loading. However, we show that by incorporating an on-chip stray light absorber, the surface wave contribution is reduced by a factor $>$10. With the on-chip stray light absorber the point source response is close to simulations down to the $sim-35$ dB level, the simulation based on an ideal Gaussian illumination of the optics. In addition, as a crosscheck we show that the extended source response of a single pixel in the array with the absorbing grid is in agreement with the integral of the point source measurements.
We are studying the properties of Niobium Silicon amorphous alloys as a candidate material for the fabrication of highly sensitive Kinetic Inductance Detectors (KID), optimized for very low optical loads. As in the case of other composite materials, the NbSi properties can be changed by varying the relative amounts of its components. Using a NbSi film with T_c around 1 K we have been able to obtain the first NbSi resonators, observe an optical response and acquire a spectrum in the band 50 to 300 GHz. The data taken show that this material has very high kinetic inductance and normal state surface resistivity. These properties are ideal for the development of KID. More measurements are planned to further characterize the NbSi alloy and fully investigate its potential.
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