No Arabic abstract
Large ultra-sensitive detector arrays are needed for present and future observatories for far infra-red, submillimeter wave (THz), and millimeter wave astronomy. With increasing array size, it is increasingly important to control stray radiation inside the detector chips themselves, the surface wave. We demonstrate this effect with focal plane arrays of 880 lens-antenna coupled Microwave Kinetic Inductance Detectors (MKIDs). Presented here are near field measurements of the MKID optical response versus the position on the array of a reimaged optical source. We demonstrate that the optical response of a detector in these arrays saturates off-pixel at the $sim-30$ dB level compared to the peak pixel response. The result is that the power detected from a point source at the pixel position is almost identical to the stray response integrated over the chip area. With such a contribution, it would be impossible to measure extended sources, while the point source sensitivity is degraded due to an increase of the stray loading. However, we show that by incorporating an on-chip stray light absorber, the surface wave contribution is reduced by a factor $>$10. With the on-chip stray light absorber the point source response is close to simulations down to the $sim-35$ dB level, the simulation based on an ideal Gaussian illumination of the optics. In addition, as a crosscheck we show that the extended source response of a single pixel in the array with the absorbing grid is in agreement with the integral of the point source measurements.
Microwave Kinetic Inductance Detectors (MKIDs) have great potential for large very sensitive detector arrays for use in, for example, sub-mm imaging. Being intrinsically readout in the frequency domain, they are particularly suited for frequency domain multiplexing allowing $sim$1000s of devices to be readout with one pair of coaxial cables. However, this moves the complexity of the detector from the cryogenics to the warm electronics. We present here the concept and experimental demonstration of the use of Fast Fourier Transform Spectrometer (FFTS) readout, showing no deterioration of the noise performance compared to low noise analog mixing while allowing high multiplexing ratios.
We present the development of a second generation digital readout system for photon counting microwave kinetic inductance detector (MKID) arrays operating in the optical and near-IR wavelength bands. Our system retains much of the core signal processing architecture from the first generation system, but with a significantly higher bandwidth, enabling readout of kilopixel MKID arrays. Each set of readout boards is capable of reading out 1024 MKID pixels multiplexed over 2 GHz of bandwidth; two such units can be placed in parallel to read out a full 2048 pixel microwave feedline over a 4 -- 8 GHz band. As in the first generation readout, our system is capable of identifying, analyzing, and recording photon detection events in real time with a time resolution of order a few microseconds. Here, we describe the hardware and firmware, and present an analysis of the noise properties of the system. We also present a novel algorithm for efficiently suppressing IQ mixer sidebands to below -30 dBc.
The energy resolution of a single photon counting Microwave Kinetic Inductance Detector (MKID) can be degraded by noise coming from the primary low temperature amplifier in the detectors readout system. Until recently, quantum limited amplifiers have been incompatible with these detectors due to dynamic range, power, and bandwidth constraints. However, we show that a kinetic inductance based traveling wave parametric amplifier can be used for this application and reaches the quantum limit. The total system noise for this readout scheme was equal to ~2.1 in units of quanta. For incident photons in the 800 to 1300 nm range, the amplifier increased the average resolving power of the detector from ~6.7 to 9.3 at which point the resolution becomes limited by noise on the pulse height of the signal. Noise measurements suggest that a resolving power of up to 25 is possible if redesigned detectors can remove this additional noise source.
In Kinetic Inductance Detectors (KIDs) and other similar applications of superconducting microresonators, both the large and small-signal behaviour of the device may be affected by electrothermal feedback. Microwave power applied to read out the device is absorbed by and heats the superconductor quasiparticles, changing the superconductor conductivity and hence the readout power absorbed in a positive or negative feedback loop. In this work, we explore numerically the implications of an extensible theoretical model of a generic superconducting microresonator device for a typical KID, incorporating recent work on the power flow between superconductor quasiparticles and phonons. This model calculates the large-signal (changes in operating point) and small-signal behaviour of a device, allowing us to determine the effect of electrothermal feedback on device responsivity and noise characteristics under various operating conditions. We also investigate how thermally isolating the device from the bath, for example by designing the device on a membrane only connected to the bulk substrate by thin legs, affects device performance. We find that at a typical device operating point, positive electrothermal feedback reduces the effective thermal conductance from the superconductor quasiparticles to the bath, and so increases responsivity to signal (pair-breaking) power, increases noise from temperature fluctuations, and decreases the Noise Equivalent Power (NEP). Similarly, increasing the thermal isolation of the device while keeping the quasiparticle temperature constant decreases the NEP, but also decreases the device response bandwidth.
To use highly resistive material for Kinetic Inductance Detectors (KID), new designs have to be done, in part due to the impedance match needed between the KID chip and the whole 50 ohms readout circuit. Chips from two new hybrid designs, with an aluminum throughline coupled to titanium nitride microresonators, have been measured and compared to a TiN only chip. In the hybrid chips, parasitic temperature dependent box resonances are absent. The dark KID properties have been measured in a large set of resonators. A surprisingly long lifetime, up to 5.6 ms is observed in a few KIDs. For the other more reproducible devices, the mean electrical Noise Equivalent Power is 5.4 10-19 W.Hz1/2.