Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userSpray-pyrolysis deposited La1-xSrxCoO3 thin films for potential non-volatile memory applications
250
0
0.0
(
0
)
Added by
Zacharias Viskadourakis
Publication date
2020
fields
Physics
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
In this work thin films of the La1-xSrxCoO3 (0.05 < x < 0.26) compound were grown, employing the so-called spray pyrolysis process. The as-grown thin films exhibit polycrystalline microstructure, with uniform grain size distribution, and observable porosity. Regarding their electrical transport properties, the produced thin films show semiconducting-like behavior, regardless the Sr doping level, which is most likely due to both the oxygen deficiencies and the grainy nature of the films. Furthermore, room temperature current-voltage (I-V) measurements reveal stable resistance switching behavior, which is well explained in terms of space-charge limited conduction mechanism. The presented experimental results provide essential evidence regarding the engagement of low cost, industrial-scale methods of growing perovskite transition metal oxide thin films, for potential applications in random access memory devices.
rate research
Read More
The Fe-doped CuO thin films were deposited onto glass substrates by Spray pyrolysis technique. The structural, micro-structural, optical and electrical properties of the synthesized samples were investigated in details. The X-Ray diffraction (XRD), Raman and Fourier Transform Infrared (FTIR) spectroscopy, confirmed that the studied samples exhibit single phase monoclinic structure of CuO. The UV-VIS spectrophotometer mentioned that the transmittance increases to 80 % when increasing the Fe concentration. Furthermore, the band gap energy of the obtained CuO was 1.29 eV. This value was slightly increased by the Fe substitution. In addition, the electrical properties of the films such as the conductivity, the mobility, the resistivity and the carrier concentration have been studied. The Hall Effect measurements confirmed the p-type conductivity of the studied films.
In this paper we reported, to the best of our knowledge, the first deposition of highly oriented thin films (with thickness of about 90 nm) of NdCoO3 and Nd0.8Sr0.2CoO3 cobaltites on single-crystalline STO and LAO substrates. Our investigation has shown that highly oriented single phase thin films of NCO and NSCO can be successfully deposited by means of rf-sputtering if the substrates is heated at high temperatures (700C); lower substrate temperature has shown to lead to multi-phase materials with a low crystallinity degree . LAO substrate showed to give origin to a prefect match of the out-of-plane lattice constant of the NSCO target material.
Recently, nanolaminated ternary carbides have attracted immense interest due to the concomitant presence of both ceramic and metallic properties. Here, we grow nanolaminate Ti3AlC2 thin films by pulsed laser deposition on c-axis-oriented sapphire substrates and, surprisingly, the films are found to be highly oriented along the (103) axis normal to the film plane, rather than the (000l) orientation. Multiple characterization techniques are employed to explore the structural and chemical quality of these films, the electrical and optical properties, and the device functionalities. The 80-nm thick Ti3AlC2 film is highly conducting at room temperature (resistivity of 50 micro ohm-cm), and a very-low-temperature coefficient of resistivity. The ultrathin (2 nm) Ti3AlC2 film has fairly good optical transparency and high conductivity at room temperature (sheet resistance of 735 ohm). Scanning tunneling microscopy reveals the metallic characteristics (with finite density of states at the Fermi level) at room temperature. The metal-semiconductor junction of the p-type Ti3AlC2 film and n-Si show the expected rectification (diode) characteristics, in contrast to the ohmic contact behavior in the case of Ti3AlC2 on p-Si. A triboelectric-nanogenerator-based touch-sensing device, comprising of the Ti3AlC2 film, shows a very impressive peak-to-peak open-circuit output voltage of 80 V. These observations reveal that pulsed laser deposited Ti3AlC2 thin films have excellent potential for applications in multiple domains, such as bottom electrodes, resistors for high-precision measurements, Schottky diodes, ohmic contacts, fairly transparent ultrathin conductors, and next-generation biomechanical touch sensors for energy harvesting.
The interplay between ferromagnetism and topological properties of electronic band structures leads to a precise quantization of Hall resistance without any external magnetic field. This so-called quantum anomalous Hall effect (QAHE) is born out of topological correlations, and is oblivious of low-sample quality. It was envisioned to lead towards dissipationless and topologically protected electronics. However, no clear framework of how to design such an electronic device out of it exists. Here we construct an ultra-low power, non-volatile, cryogenic memory architecture leveraging the QAHE phenomenon. Our design promises orders of magnitude lower cell area compared with the state-of-the-art cryogenic memory technologies. We harness the fundamentally quantized Hall resistance levels in moire graphene heterostructures to store non-volatile binary bits (1, 0). We perform the memory write operation through controlled hysteretic switching between the quantized Hall states, using nano-ampere level currents with opposite polarities. The non-destructive read operation is performed by sensing the polarity of the transverse Hall voltage using a separate pair of terminals. We custom design the memory architecture with a novel sensing mechanism to avoid accidental data corruption, ensure highest memory density and minimize array leakage power. Our design is transferrable to any material platform exhibiting QAHE, and provides a pathway towards realizing topologically protected memory devices.
In this paper we report the deposition of epitaxial thin films of Nd1-xSrxCoO3 with x=0, 0.2 and 0.5 on single crystalline substrates (SrTiO3 and LaAlO3) carried out by means of rf-magnetron sputtering. The deposited films are all completely oriented and epitaxial and characterized by a nanocrystalline morphology. As-deposited films have an average roughness around 1 nm while after the thermal treatment this increases up to 20 nm while preserving the nanocrystalline morphology. All the films deposited on SrTiO3 have shown to be under a certain degree of tensile strain while those on the LaAlO3 experience a compressive strain thus suggesting that at about 50 nm the films are not fully relaxed, even after the thermal treatment. For the x=0.2 composition three different thickness have been investigated revealing an increased strain for the thinner films.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
