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Register a new userMechanical tunability of an ultra-narrow spectral feature with uniaxial stress
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Rare-earth doped crystals have numerous applications ranging from frequency metrology to quantum information processing. To fully benefit from their exceptional coherence properties, the effect of mechanical strain on the energy levels of the dopants - whether it is a resource or perturbation - needs to be considered. We demonstrate that by applying uniaxial stress to a rare-earth doped crystal containing a spectral hole, we can shift the hole by a controlled amount that is larger than the width of the hole. We deduce the sensitivity of $rm Eu^{3+}$ ions in an $rm Y_2SiO_5$ matrix as a function of crystal site and the crystalline axis along which the stress is applied.
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Material strain has recently received growing attention as a complementary resource to control the energy levels of quantum emitters embedded inside a solid-state environment. Some rare-earth ion dopants provide an optical transition which simultaneously has a narrow linewidth and is highly sensitive to strain. In such systems, the technique of spectral hole burning, in which a transparent window is burnt within the large inhomogeneous profile, allows to benefit from the narrow features, which are also sensitive to strain, while working with large ensembles of ions. However, working with ensembles may give rise to inhomogeneous responses among different ions. We investigate experimentally how the shape of a narrow spectral hole is modified due to external mechanical strain, in particular, the hole broadening as a function of the geometry of the crystal sites and the crystalline axis along which the stress is applied. Studying these effects are essential in order to optimize the existing applications of rare-earth doped crystals in fields which already profit from the more well-established coherence properties of these dopants such as frequency metrology and quantum information processing, or even suggest novel applications of these materials, for example as robust devices for force-sensing or highly sensitive accelerometers.
The Weyl semimetal NbP exhibits a very small Fermi surface consisting of two electron and two hole pockets, whose fourfold degeneracy in $k$ space is tied to the rotational symmetry of the underlying tetragonal crystal lattice. By applying uniaxial stress, the crystal symmetry can be reduced, which successively leads to a degeneracy lifting of the Fermi-surface pockets. This is reflected by a splitting of the Shubnikov-de Haas frequencies when the magnetic field is aligned along the $c$ axis of the tetragonal lattice. In this study, we present the measurement of Shubnikov-de Haas oscillations of single-crystalline NbP samples under uniaxial tension, combined with state-of-the-art calculations of the electronic band structure. Our results show qualitative agreement between calculated and experimentally determined Shubnikov-de Haas frequencies, demonstrating the robustness of the band-structure calculations upon introducing strain. Furthermore, we predict a significant shift of the Weyl points with increasing uniaxial tension, allowing for an effective tuning to the Fermi level at only 0.8% of strain along the $a$ axis.
Imposing additional confinement in two-dimensional (2D) materials can yield further control over the associated electronic, optical, and topological properties. However, synthesis of ultra-narrow nanoribbons (NRs) remains a challenge, particularly for the transition metal dichalcogenides (TMDs), and synthesizing TMD NRs narrower than 50 nm has remained elusive. Here, we report the vapor-phase synthesis of ultra-narrow TaS2 NRs. The NRs are grown within the hollow cavity of carbon nanotubes, thereby limiting their lateral dimensions and layer number, while simultaneously stabilizing them against the environment. The NRs reach the monolayer (ML) limit and exhibit widths as low as 2.5 nm. Atomic-resolution scanning transmission electron microscopy (STEM) reveals the detailed atomic structure of the ultra-narrow NRs and we observe a hitherto unseen atomic structure supermodulation phenomenon of ordered defect arrays within the NRs. First-principles calculations based on density functional theory (DFT) show the presence of flat bands, as well as edge- and boundary-localized states, and help identify the atomic configuration of the supermodulation. Nanotube-templated synthesis represents a unique, transferable, and broadly deployable route toward ultra-narrow TMD NR growth.
Selenium is a crucial earth-abundant and non-toxic semiconductor with a wide range of applications across the semiconductor industries. Selenium has drawn attention from scientific communities for its wide range of applicability: from photovoltaics to imaging devices. Its usage as a photosensitive material largely involves the synthesis of the amorphous phase (a-Se) via various experimental techniques. However, the ground state crystalline phase of this material, known as the trigonal selenium (textit{t}-Se), is not extensively studied for its optimum electronic and optical properties. In this work, we present density functional theory (DFT) based systematic studies on the ultra-thin $(10overline{1}0)$ surface slabs of textit{t}-Se. We report the surface energies, work function, electronic and optical properties as a function of number of layers for $(10overline{1}0)$ surface slabs to access its suitability for applications as a photosensitive material.
Recent advances in focused ion beam technology have enabled high-resolution, direct-write nanofabrication using light ions. Studies with light ions to date have, however, focused on milling of materials where sub-surface ion beam damage does not inhibit device performance. Here we report on direct-write milling of single crystal diamond using a focused beam of oxygen ions. Material quality is assessed by Raman and luminescence analysis, and reveals that the damage layer generated by oxygen ions can be removed by nonintrusive post-processing methods such as localised electron beam induced chemical etching.
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