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Register a new userDirect-write milling of diamond by a focused oxygen ion beam
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Recent advances in focused ion beam technology have enabled high-resolution, direct-write nanofabrication using light ions. Studies with light ions to date have, however, focused on milling of materials where sub-surface ion beam damage does not inhibit device performance. Here we report on direct-write milling of single crystal diamond using a focused beam of oxygen ions. Material quality is assessed by Raman and luminescence analysis, and reveals that the damage layer generated by oxygen ions can be removed by nonintrusive post-processing methods such as localised electron beam induced chemical etching.
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A focused ion beam is used to mill side holes in air-silica structured fibres. By way of example, side holes are introduced in two types of air-structured fibres (1) a photonic crystal four-ring fibre and (2) a 6-hole single ring step index structured fibre.
Focused ion beam (FIB) microscopy suffers from source shot noise - random variation in the number of incident ions in any fixed dwell time - along with random variation in the number of detected secondary electrons per incident ion. This multiplicity of sources of randomness increases the variance of the measurements and thus worsens the trade-off between incident ion dose and image accuracy. Time-resolved sensing combined with maximum likelihood estimation from the resulting sets of measurements greatly reduces the effect of source shot noise. Through Fisher information analysis and Monte Carlo simulations, the reduction in mean-squared error or reduction in required dose is shown to be by a factor approximately equal to the secondary electron yield. Experiments with a helium ion microscope (HIM) are consistent with the analyses and suggest accuracy improvement for a fixed source dose, or reduced source dose for a desired imaging accuracy, by a factor of about 3.
We report on two novel ways for patterning Lithium Niobate (LN) at submicronic scale by means of focused ion beam (FIB) bombardment. The first method consists of direct FIB milling on LiNbO3 and the second one is a combination of FIB milling on a deposited metallic layer and subsequent RIE (Reactive Ion Etching) etching. FIB images show in both cases homogeneous structures with well reproduced periodicity. These methods open the way to the fabrication of photonic crystals on LiNbO3 substrates.
We have fabricated C-Ga-O nanowires by gallium focused ion beam-induced deposition from the carbon-based precursor phenanthrene. The electrical conductivity of the nanowires is weakly temperature dependent below 300 K, and indicates a transition to a superconducting state below Tc = 7 K. We have measured the temperature dependence of the upper critical field Hc2(T), and estimate a zero temperature critical field of 8.8 T. The Tc of this material is approximately 40% higher than that of any other direct write nanowire, such as those based on C-W-Ga, expanding the possibility of fabricating direct-write nanostructures that superconduct above liquid helium temperatures
Nanostructures have become an attractive subject due to many applications, particularly the photonic bandgap effect observed in photonic crystals. Nevertheless, the fabrication of such structures remains a challenge because of accurate requirement concerning regularity, shape, hole depth etc. of the structure. E-beam lithography permits a good control of dimensional parameters but needs a 1-step fabrication process. In our work, we have to combine traditional strip-load waveguides (SiO2/SiON/SiO2 on Si) and nanostructures whose dimension are totally different. This imposes a 2-step process where waveguides and nanostructures are successively fabricated. We have at our disposal different ways to characterize these nanostructures. A direct aspect control during and after FIB treatment can be achieved by FIB and SEM imaging. Scanning near-field optical microscopy (SNOM) is currently the most effective way to test guiding confinement in such surface structures by detecting the evanescent field.
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