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Register a new userSOI technology for quantum information processing
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Added by
Silvano De Franceschi
Publication date
2019
fields
Physics
and research's language is
English
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We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information - so-called qubits - are encoded in the spin degree of freedom of gate-confined holes in p-type devices. We show how a hole-spin can be efficiently manipulated by means of a microwave excitation applied to the corresponding confining gate. The hole spin state can be read out and reinitialized through a Pauli blockade mechanism. The studied devices are derived from silicon nanowire field-effect transistors. We discuss their prospects for scalability and, more broadly, the potential advantages of FDSOI technology.
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We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of freedom of a hole Quantum Dot defined by one of the Gates. Coherent spin manipulation is performed by means of an RF E-Field signal applied to the Gate itself.
We theoretically study single and two-qubit dynamics in the circuit QED architecture. We focus on the current experimental design [Wallraff et al., Nature 431, 162 (2004); Schuster et al., Nature 445, 515 (2007)] in which superconducting charge qubits are capacitively coupled to a single high-Q superconducting coplanar resonator. In this system, logical gates are realized by driving the resonator with microwave fields. Advantages of this architecture are that it allows for multi-qubit gates between non-nearest qubits and for the realization of gates in parallel, opening the possibility of fault-tolerant quantum computation with superconduting circuits. In this paper, we focus on one and two-qubit gates that do not require moving away from the charge-degeneracy `sweet spot. This is advantageous as it helps to increase the qubit dephasing time and does not require modification of the original circuit QED. However these gates can, in some cases, be slower than those that do not use this constraint. Five types of two-qubit gates are discussed, these include gates based on virtual photons, real excitation of the resonator and a gate based on the geometric phase. We also point out the importance of selection rules when working at the charge degeneracy point.
We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI devices enables switching a quantum bit (qubit) between an electrically-addressable, yet charge noise-sensitive configuration, and a protected configuration.
This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent $V_{TH}$ controllability. Low-temperature operation enables higher drive current and a largely reduced subthreshold swing (down to 7mV/dec). FDSOI can provide a valuable approach to cryogenic low-power electronics. Applications such as classical control hardware for quantum processors are envisioned.
Amplifiers are crucial in every experiment carrying out a very sensitive measurement. However, they always degrade the information by adding noise. Quantum mechanics puts a limit on how small this degradation can be. Theoretically, the minimum noise energy added by a phase preserving amplifier to the signal it processes amounts at least to half a photon at the signal frequency. In this article, we show that we can build a practical microwave device that fulfills the minimal requirements to reach the quantum limit. This is of importance for the readout of solid state qubits, and more generally, for the measurement of very weak signals in various areas of science. We also discuss how this device can be the basic building block for a variety of practical applications such as amplification, noiseless frequency conversion, dynamic cooling and production of entangled signal pairs.
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