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Register a new userGeneration of dc, ac, and second-harmonic spin currents by electromagnetic fields in an inversion-asymmetric antiferromagnet
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Tatsuhiko N. Ikeda
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Manipulating spin currents in magnetic insulators is a key technology in spintronics. We theoretically study a simple inversion-asymmetric model of quantum antiferromagnets, where both the exchange interaction and the magnetic field are staggered. We calculate spin currents generated by external electric and magnetic fields by using a quantum master equation. We show that an ac electric field with amplitude $E_0$ leads, through exchange-interaction modulation, to the dc and second-harmonic spin currents proportional to $E_0^2$. We also show that dc and ac staggered magnetic fields $B_0$ generate the dc and ac spin currents proportional to $B_0$, respectively. We elucidate the mechanism by an exactly solvable model, and thereby propose the ways of spin current manipulation by electromagnetic fields.
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Second harmonic generation (SHG) is a fundamental nonlinear optical phenomenon widely used both for experimental probes of materials and for application to optical devices. Even-order nonlinear optical responses including SHG generally require breaking of inversion symmetry, and thus have been utilized to study noncentrosymmetric materials. Here, we study theoretically the SHG in inversion-symmetric Dirac and Weyl semimetals under a DC current which breaks the inversion symmetry by creating a nonequilibrium steady state. Based on analytic and numerical calculations, we find that Dirac and Weyl semimetals exhibit strong SHG upon application of finite current. Our experimental estimation for a Dirac semimetal Cd$_3$As$_2$ and a magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$ suggests that the induced susceptibility $chi^{(2)}$ for practical applied current densities can reach $10^5~mathrm{pm}cdotmathrm{V}^{-1}$ with mid-IR or far-IR light. This value is 10$^2$-10$^4$ times larger than those of typical nonlinear optical materials. We also discuss experimental approaches to observe the current-induced SHG and comment on current-induced SHG in other topological semimetals in connection with recent experiments.
We demonstrate pronounced electric-field-induced second-harmonic generation in naturally inversion symmetric 2H stacked bilayer MoS$_{2}$ embedded into microcapacitor devices. By applying strong external electric field perturbations ($|F| = pm 2.6 MVcm^{-1}$) perpendicular to the basal plane of the crystal we control the inversion symmetry breaking and, hereby, tune the nonlinear conversion efficiency. Strong tunability of the nonlinear response is observed throughout the energy range ($E_{omega} sim 1.25 eV - 1.47 eV$) probed by measuring the second-harmonic response at $E_{2omega}$, spectrally detuned from both the A- and B-exciton resonances. A 60-fold enhancement of the second-order nonlinear signal is obtained for emission at $E_{2omega} = 2.49 eV$, energetically detuned by $Delta E = E_{2omega} - E_C = -0.26 eV$ from the C-resonance ($E_{C} = 2.75 eV$). The pronounced spectral dependence of the electric-field-induced second-harmonic generation signal reflects the bandstructure and wave function admixture and exhibits particularly strong tunability below the C-resonance, in good agreement with Density Functional Theory calculations. Moreover, we show that the field-induced second-harmonic generation relies on the interlayer coupling in the bilayer. Our findings strongly suggest that the strong tunability of the electric-field-induced second-harmonic generation signal in bilayer transition metal dichalcogenides may find applications in miniaturized electrically switchable nonlinear devices.
An unbiased one-dimensional weak link between two terminals, subjected to the Rashba spin-orbit interaction caused by an AC electric field which rotates periodically in the plane perpendicular to the link, is shown to inject spin-polarized electrons into the terminals. The injected spin-polarization has a DC component along the link and a rotating transverse component in the perpendicular plane. In the adiabatic, low rotation-frequency regime, these polarization components are proportional to the frequency. The DC component of the polarization vanishes for a linearly-polarized electric field.
The valley degeneracy of electron states in graphene stimulates intensive research of valley-related optical and transport phenomena. While many proposals on how to manipulate valley states have been put forward, experimental access to the valley polarization in graphene is still a challenge. Here, we develop a theory of the second optical harmonic generation in graphene and show that this effect can be used to measure the degree and sign of the valley polarization. We show that, at the normal incidence of radiation, the second harmonic generation stems from imbalance of carrier populations in the valleys. The effect has a specific polarization dependence reflecting the trigonal symmetry of electron valley and is resonantly enhanced if the energy of incident photons is close to the Fermi energy.
Valley polarization in graphene breaks inversion symmetry and therefore leads to second-harmonic generation. We present a complete theory of this effect within a single-particle approximation. It is shown that this may be a sensitive tool to measure the valley polarization created, e.g., by polarized light and, thus, can be used for a development of ultrafast valleytronics in graphene.
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