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Register a new userControl of the orbital character of indirect excitons in MoS2/WS2 heterobilayers
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Valley selective hybridization and residual coupling of electronic states in commensurate van der Waals heterobilayers enable the control of the orbital character of interlayer excitons. We demonstrate electric field control of layer index, orbital character, lifetime and emission energy of indirect excitons in MoS2/WS2 heterobilayers embedded in an vdW field effect structure. Different excitonic dipoles normal to the layers are found to stem from bound electrons and holes located in different valleys of MoS2/WS2 with a valley selective degree of hybridization. For the energetically lowest emission lines, coupling of electronic states causes a field-dependent level anticrossing that goes along with a change of the IX lifetime from 400 ns to 100 ns. In the hybridized regime the exiton is delocalized between the two constituent layers, whereas for large positive or negative electric fields, the layer index of the bound hole is field-dependent. Our results demonstrate the design of novel van der Waals solids with the possibility to in-situ control their physical properties via external stimuli such as electric fields.
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Ensembles of indirect or interlayer excitons (IXs) are intriguing systems to explore classical and quantum phases of interacting bosonic ensembles. IXs are composite bosons that feature enlarged lifetimes due to the reduced overlap of the electron-hole wave functions. We demonstrate electric Field control of indirect excitons in MoS2/WS2 hetero-bilayers embedded in a field effect structure with few-layer hexagonal boron nitrite as insulator and few-layer graphene as gate-electrodes. The different strength of the excitonic dipoles and a distinct temperature dependence identify the indirect excitons to stem from optical interband transitions with electrons and holes located in different valleys of the hetero-bilayer featuring highly hybridized electronic states. For the energetically lowest emission lines, we observe a field-dependent level anticrossing at low temperatures. We discuss this behavior in terms of coupling of electronic states from the two semiconducting monolayers resulting in spatially delocalized excitons of the hetero-bilayer behaving like an artificial van der Waals solid. Our results demonstrate the design of novel nano-quantum materials prepared from artificial van der Waals solids with the possibility to in-situ control their physical properties via external stimuli such as electric fields.
Spin transport of indirect excitons in GaAs/AlGaAs coupled quantum wells was observed by measuring the spatially resolved circular polarization of exciton emission. Exciton spin transport over several microns originates from a long spin relaxation time and long lifetime of indirect excitons.
We calculate linear and nonlinear optical susceptibilities arising from the excitonic states of mono- layer MoS2 for in-plane light polarizations, using second-quantized bound and unbound exciton operators. Optical selection rules are critical for obtaining the susceptibilities. We derive the valley-chirality rule for the second harmonic generation in monolayer MoS2, and find that the third- harmonic process is efficient only for linearly polarized input light while the third-order two photon process (optical Kerr effect) is efficient for circularly polarized light using a higher order exciton state. The absence of linear absorption due to the band gap and the unusually strong two-photon third-order nonlinearity make the monolayer MoS2 excitonic structure a promising resource for coherent nonlinear photonics.
Phase singularities in quantum states play a significant role both in the state properties and in the transition between the states. For instance, a transition to two-dimensional superfluid state is governed by pairing of vortices and, in turn, unpaired vortices can cause dissipations for particle fluxes. Vortices and other phase defects can be revealed by characteristic features in interference patterns produced by the quantum system. We present dislocation-like phase singularities in interference patterns in a condensate of indirect excitons measured by shift-interferometry. We show that the observed dislocations in interference patterns are not associated with conventional phase defects: neither with vortices, nor with polarization vortices, nor with half-vortices, nor with skyrmions, nor with half-skyrmions. We present the origin of these new phase singularities in condensate interference patterns: the observed interference dislocations originate from converging of the condensate matter waves propagating from different sources.
Transition metal dichalcogenides hold promise for applications in novel optoelectronic devices. There is therefore a need for materials that can be obtained in large quantities and with well understood optical properties. In this report, we present a thorough photoluminescence (PL) investigations of monolayer tungsten disulphide obtained via liquid phase exfoliation. As shown by microscopy studies, the exfoliated nanosheets have dimensions of tens of nanometers and thickness of 2.5 monolayers on average. The monolayer content is about 20%. Our studies show that at low temperature the photoluminescence is dominated by excitons localized on nanosheet edges. As a consequence, the PL is strongly sensitive to environment and exhibits an enhanced splitting in magnetic field. As the temperature is increased, the excitons are thermally excited out of the defect states and the dominant transition is that of the negatively charged exciton. Furthermore, upon excitation with a circularly polarized light, the PL retains a degree of polarization reaching 50% and inherited from the valley polarized photoexcited excitons. The studies of PL dynamics reveal that the PL lifetime is on the order of 10 ps, probably limited by non-radiative processes. Our results underline the potential of liquid exfoliated TMD monolayers in large scale optoelectronic devices.
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