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Register a new userSpin-Orbit-Torque-based Devices, Circuits and Architectures
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Added by
Farshad Moradi
Publication date
2019
fields
Informatics Engineering
and research's language is
English
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Spintronics, the use of spin of an electron instead of its charge, has received huge attention from research communities for different applications including memory, interconnects, logic implementation, neuromorphic computing, and many other applications. Here, in this paper, we review the works within spintronics, more specifically on spin-orbit torque (SOT) within different research groups. We also provide researchers an insight into the future potentials of the SOT-based designs. This comprehensive review paper covers different aspects of SOT-based design from device and circuit to architecture level as well as more ambitious and futuristic applications of such technology.
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Probabilistic inference from real-time input data is becoming increasingly popular and may be one of the potential pathways at enabling cognitive intelligence. As a matter of fact, preliminary research has revealed that stochastic functionalities also underlie the spiking behavior of neurons in cortical microcircuits of the human brain. In tune with such observations, neuromorphic and other unconventional computing platforms have recently started adopting the usage of computational units that generate outputs probabilistically, depending on the magnitude of the input stimulus. In this work, we experimentally demonstrate a spintronic device that offers a direct mapping to the functionality of such a controllable stochastic switching element. We show that the probabilistic switching of Ta/CoFeB/MgO heterostructures in presence of spin-orbit torque and thermal noise can be harnessed to enable probabilistic inference in a plethora of unconventional computing scenarios. This work can potentially pave the way for hardware that directly mimics the computational units of Bayesian inference.
Nanoelectronic devices that mimic the functionality of synapses are a crucial requirement for performing cortical simulations of the brain. In this work we propose a ferromagnet-heavy metal heterostructure that employs spin-orbit torque to implement Spike-Timing Dependent Plasticity. The proposed device offers the advantage of decoupled spike transmission and programming current paths, thereby leading to reliable operation during online learning. Possible arrangement of such devices in a crosspoint architecture can pave the way for ultra-dense neural networks. Simulation studies indicate that the device has the potential of achieving pico-Joule level energy consumption (maximum 2 pJ per synaptic event) which is comparable to the energy consumption for synaptic events in biological synapses.
There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation. Magnetic tunnel junction (MTJ) memory elements can be used for computation by manipulating a domain wall (DW), a transition region between magnetic domains. But, these devices have suffered from challenges: spin transfer torque (STT) switching of a DW requires high current, and the multiple etch steps needed to create an MTJ pillar on top of a DW track has led to reduced tunnel magnetoresistance (TMR). These issues have limited experimental study of devices and circuits. Here, we study prototypes of three-terminal domain wall-magnetic tunnel junction (DW-MTJ) in-memory computing devices that can address data processing bottlenecks and resolve these challenges by using perpendicular magnetic anisotropy (PMA), spin-orbit torque (SOT) switching, and an optimized lithography process to produce average device tunnel magnetoresistance TMR = 164%, resistance-area product RA = 31 {Omega}-{mu}m^2, close to the RA of the unpatterned film, and lower switching current density compared to using spin transfer torque. A two-device circuit shows bit propagation between devices. Device initialization variation in switching voltage is shown to be curtailed to 7% by controlling the DW initial position, which we show corresponds to 96% accuracy in a DW-MTJ full adder simulation. These results make strides in using MTJs and DWs for in-memory and neuromorphic computing applications.
Computing-in-memory (CIM) is proposed to alleviate the processor-memory data transfer bottleneck in traditional Von-Neumann architectures, and spintronics-based magnetic memory has demonstrated many facilitation in implementing CIM paradigm. Since hardware security has become one of the major concerns in circuit designs, this paper, for the first time, investigates spin-based computing-in-memory (SpinCIM) from a security perspective. We focus on two fundamental questions: 1) how the new SpinCIM computing paradigm can be exploited to enhance hardware security? 2) what security concerns has this new SpinCIM computing paradigm incurred?
Astrocytes play a central role in inducing concerted phase synchronized neural-wave patterns inside the brain. In this article, we demonstrate that injected radio-frequency signal in underlying heavy metal layer of spin-orbit torque oscillator neurons mimic the neuron phase synchronization effect realized by glial cells. Potential application of such phase coupling effects is illustrated in the context of a temporal binding problem. We also present the design of a coupled neuron-synapse-astrocyte network enabled by compact neuromimetic devices by combining the concepts of local spike-timing dependent plasticity and astrocyte induced neural phase synchrony.
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