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Register a new userManipulating Spin Chirality of Magnetic Skyrmion Bubbles by In-Plane Re-versed Magnetic Fields in (Mn$_{1-x}$Ni$_x$)$_{65}$Ga$_{35}$ ($x = 0.45$) magnet
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Understanding the dynamics of the magnetic skyrmion, a particle-like topologically stable spin texture, and its response dynamics to external fields are indis-pensable for the applications in spintronic devices. In this letter, the Lorentz transmis-sion electron microscopy (LTEM) was used to investigate the spin chirality of the mag-netic skyrmion bubbles (SKBs) in the centrosymmetric magnet MnNiGa at room tem-perature. The reversal of SKBs excited by the in-plane magnetic field has been revealed. Moreover, the collective behavior of interacting spin chirality can be manipulated by reversing the directions of the magnetic fields on a wedge-shaped thin plate. The dy-namic behavior of the bubbles at different position of the thin plate has been explored with the micromagnetic simulation, indicating a non-uniform and nontrivial dynamic magnetization on the surfaces and center of the thin plate during the spin chirality re-versal. The results suggest that the controllable symmetry breaking of the SKBs arising from thickness variation provides an ability to manipulate the collective behavior of the spin chirality with small external fields, leading to a promising application in nonvola-tile spintronic devices for magnetic skyrmions.
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Magnetic chiral skyrmion bubbles and achiral bubbles are two independent magnetic domain structures, in which the former with equivalent winding number to skyrmions offers great promise as information carriers for further spintronic devices. Here, in this work, we experimentally investigate the generation and annihilation of magnetic chiral skyrmion bubbles and achiral bubbles in the Mn-Ni-Ga thin plate by using the Lorentz transmission electron microscopy (L-TEM). The two independent magnetic domain structures can be directly controlled after the field cooling manipulation by varying the titled angles of external magnetic fields. By imaging the magnetization reversal with increasing temperature, we found an extraordinary annihilation mode of magnetic chiral skyrmion bubbles and a non-linear frequency for the winding number reversal. Quantitative analysis of such dynamics was performed by using L-TEM to directly determine the barrier energy for the magnetization reversal of magnetic chiral skyrmion bubbles.
We use neutron reflectometry to investigate the interlayer exchange coupling between Ga$_{0.97}$Mn$_{0.03}$As ferromagnetic semiconductor layers separated by non-magnetic Be-doped GaAs spacers. Polarized neutron reflectivity measured below the Curie temperature of Ga$_{0.97}$Mn$_{0.03}$As reveals a characteristic splitting at the wave vector corresponding to twice the multilayer period, indicating that the coupling between the ferromagnetic layers are antiferromagnetic (AFM). When the applied field is increased to above the saturation field, this AFM coupling is suppressed. This behavior is not observed when the spacers are undoped, suggesting that the observed AFM coupling is mediated by charge carriers introduced via Be doping. The behavior of magnetization of the multilayers measured by DC magnetometry is consistent with the neutron reflectometry results.
We perform a theoretical study, using {it ab initio} total energy density-functional calculations, of the effects of disorder on the $Mn-Mn$ exchange interactions for $Ga_{1-x}Mn_xAs$ diluted semiconductors. For a 128 atoms supercell, we consider a variety of configurations with 2, 3 and 4 Mn atoms, which correspond to concentrations of 3.1%, 4.7%, and 6.3%, respectively. In this way, the disorder is intrinsically considered in the calculations. Using a Heisenberg Hamiltonian to map the magnetic excitations, and {it ab initio} total energy calculations, we obtain the effective $JMn$, from first ($n=1$) all the way up to sixth ($n=6$) neighbors. Calculated results show a clear dependence in the magnitudes of the $JMn$ with the Mn concentration $x$. Also, configurational disorder and/or clustering effects lead to large dispersions in the Mn-Mn exchange interactions, in the case of fixed Mn concentration. Moreover, theoretical results for the ground-state total energies for several configurations indicate the importance of a proper consideration of disorder in treating temperature and annealing effects.
We report an optimized chemical vapor transport method to grow single crystals of (Mn$_{1-x}$Ni$_x$)$_2$P$_2$S$_6$ where x = 0, 0.3, 0.5, 0.7 & 1. Single crystals up to 4,mm,$times$,3,mm,$times$,200,$mu$m were obtained by this method. As-grown crystals characterized by means of scanning electron microscopy, and powder x-ray diffraction measurements. The structural characterization shows that all crystals crystallize in monoclinic symmetry with the space group $C2/m$ (No. 12). We have further investigated the magnetic properties of this series of single crystals. The magnetic measurements of the all as-grown single crystals show long-range antiferromagnetic order along all crystallographic principal axes. Overall, the Neel temperature TN is non-monotonous, with increasing $Ni^{2+}$ doping the temperature of the antiferromagnetic phase transition first decreases from 80 K for pristine Mn$_2$P$_2$S$_6$ (x = 0) up to x = 0.5, and then increases again to 155 K for pure Ni$_2$P$_2$S$_6$ (x = 1). The magnetic anisotropy switches from out-of-plane to in-plane as a function of composition in (Mn$_{1-x}$Ni$_x$)$_2$P$_2$S$_6$ series. Transport studies under hydrostatic pressure on the parent compound Mn$_2$P$_2$S$_6$ evidence an insulator-metal transition at an applied critical pressure of ~22 GPa
We have investigated the electronic structure of the $p$-type diluted magnetic semiconductor In$_{1-x}$Mn$_x$As by photoemission spectroscopy. The Mn 3$d$ partial density of states is found to be basically similar to that of Ga$_{1-x}$Mn$_x$As. However, the impurity-band like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga$_{1-x}$Mn$_x$As. This difference would explain the difference in transport, magnetic and optical properties of In$_{1-x}$Mn$_x$As and Ga$_{1-x}$Mn$_x$As. The different electronic structures are attributed to the weaker Mn 3$d$ - As 4$p$ hybridization in In$_{1-x}$Mn$_x$As than in Ga$_{1-x}$Mn$_x$As.
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