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Register a new userOptimization of criteria for an efficient screening of new thermoelectric compounds: the TiNiSi structure type as a case-study
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High-throughput calculations are a very promising tool for screening a large number of compounds in order to discover new useful materials. Ternary intermetallic are thus investigated in the present work to find new compounds potentially interesting for thermoelectric applications. The screening of the stable non-metallic compounds required for such applications is obtained by calculating their electronic structure by DFT methods. In a first part, the study of the density of states at the Fermi level of well-known chemical elements and binary compounds allows to empirically optimize the selection criteria between metals and non-metals. In a second part, the TiNiSi structure-type is used as a case-study through the investigation of 570 possible compositions. This screening method leads to the selection of 12 possible semiconductors. For these selected compounds, their Seebeck coefficient and their lattice thermal conductivity are calculated in order to identify the most interesting one. TiNiSi, TaNiP or HfCoP could thus be compounds worth an experimental investigation.
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The layered Bi-chalcogenide compounds have been drawing much attention as a new layered superconductor family since 2012. Due to the rich variation of crystal structure and constituent elements, the development of new physics and chemistry of the layered Bi-chalcogenide family and its applications as functional materials have been expected. Recently, it was revealed that the layered Bi chalcogenides can show a relatively high thermoelectric performance (ZT = 0.36 in LaOBiSSe at ~650 K). Here, we show the crystal structure variation of the Bi-chalcogenide family and their thermoelectric properties. Finally, the possible strategies for enhancing the thermoelectric performance are discussed on the basis of the experimental and the theoretical facts reviewed here.
We introduce a simple but efficient electronic fitness function (EFF) that describes the electronic aspect of the thermoelectric performance. This EFF finds materials that overcome the inverse relationship between $sigma$ and $S$ based on the complexity of the electronic structures regardless of specific origin (e.g., isosurface corrugation, valley degeneracy, heavy-light bands mixture, valley anisotropy or reduced dimensionality). This function is well suited for application in high throughput screening. We applied this function to 75 different thermoelectric and potential thermoelectric materials including full- and half-Heuslers, binary semiconductors and Zintl phases. We find an efficient screening using this transport function. The EFF identifies known high performance $p$- and $n$-type Zintl phases and half-Heuslers. In addition, we find some previously unstudied phases with superior EFF.
Solid-state thermoelectric cooling is expected to be widely used in various cryogenic applications such as local cooling of superconducting devices. At present, however, thermoelectric cooling using p- and n-type Bi2Te3-based materials has been put to practical use only at room temperature. Recently, M4SiTe4 (M = Ta, Nb) has been found to show excellent n-type thermoelectric properties down to 50 K. This paper reports on the synthesis of high-performance p-type M4SiTe4 by Ti doping, which can be combined with n-type M4SiTe4 in a cooling device at low temperatures. The thermoelectric power factor of p-type M4SiTe4 reaches a maximum value of approximately 60 uW cm-1 K-2 at 210 K and exceeds the practical level in a wide temperature range of 130-270 K. A finite temperature drop by Peltier cooling was also achieved in a cooling device made of p- and n-type Ta4SiTe4 whisker crystals. These results clearly indicate that M4SiTe4 is promising to realize a practical thermoelectric cooler for use at low temperatures, which are not covered by Bi2Te3-based materials.
In search of better thermoelectric materials, we have systematically investigated the thermoelectric properties of a 122 Zintl phase compound EuCd$_{2}$As$_{2}$ using textit{ab-initio} density functional theory and semi-classical Boltzmann transport theory within constant relaxation time approximation. Considering the ground state magnetic structure which is A-type antiferromagnetic (A-AFM) and non-magnetic (NM) structure, we evaluated various thermoelectric parameters such as Seebeck coefficient, electrical and thermal conductivity, power factor and figure of merit (ZT) as function temperature as well as chemical potential. Almost all thermoelectric parameters show anisotropy between $xx$ and $zz$ directions which is stronger in case of A-AFM than in NM. Both A-AFM and NM phase of the compound display better thermoelectric performance when hole doped. We observed high Seebeck coefficient and low electronic thermal conductivity in A-AFM phase along $zz$ direction. The remarkably high ZT of 1.79 at 500 K in A-AFM phase and ZT$sim$1 in NM phase suggest that EuCd$_{2}$As$_{2}$ is a viable thermoelectric material when p-doped.
MnMX (M = Co or Ni, X = Si or Ge) alloys, experiencing structural transformation between Ni2In-type hexagonal and TiNiSi-type orthorhombic phases, attract considerable attention due to their potential applications as room-temperature solid refrigerants. Although lots of studies have been carried out on how to tune this transformation and obtain large entropy change in a wide temperature region, the crystallography of this martensitic transformation is still unknown. The biggest obstacle for crystallography investigation is to obtain a bulk sample, in which hexagonal and orthorhombic phases coexist, because the MnMX alloys will fragment into powders after experiencing the transformation. For this reason, we carefully tune the transformation temperature to be slightly below 300 K. In that case, a bulk sample with small amounts of orthorhombic phases distributed in hexagonal matrix is obtained. Most importantly, there are no cracks between the two phases. It facilities us to investigate the microstructure using electron microscope. The obtained results indicate that the orientation relationship between hexagonal and orthorhombic structures is [4-2-23]h//[120]o & (01-10)h//(001)o and the habit plane is {-2113.26}h. WLR theory is also adopted to calculate the habit plane. The calculated result agrees well with the measured one. Our work reveals the crystallography of hexagonal-orthorhombic transformation for the first time and is helpful for understanding the transformation-associated physical effects in MnMX alloys.
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