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Register a new userElectronic fitness function for screening semiconductors as thermoelectric materials
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We introduce a simple but efficient electronic fitness function (EFF) that describes the electronic aspect of the thermoelectric performance. This EFF finds materials that overcome the inverse relationship between $sigma$ and $S$ based on the complexity of the electronic structures regardless of specific origin (e.g., isosurface corrugation, valley degeneracy, heavy-light bands mixture, valley anisotropy or reduced dimensionality). This function is well suited for application in high throughput screening. We applied this function to 75 different thermoelectric and potential thermoelectric materials including full- and half-Heuslers, binary semiconductors and Zintl phases. We find an efficient screening using this transport function. The EFF identifies known high performance $p$- and $n$-type Zintl phases and half-Heuslers. In addition, we find some previously unstudied phases with superior EFF.
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The high-throughput (HT) computational method is a useful tool to screen high performance functional materials. In this work, using the deformation potential method under the single band model, we evaluate the carrier relaxation time and establish an electrical descriptor (c{hi}) characterized by the carrier effective masses based on the simple rigid band approximation. The descriptor (c{hi}) can be used to reasonably represent the maximum power factor without solving the electron Boltzmann transport equation. Additionally, the Gruneisen parameter ({gamma}), a descriptor of the lattice anharmonicity and lattice thermal conductivity, is efficiently evaluated using the elastic properties, omitting the costly phonon calculations. Applying two descriptors (c{hi} and {gamma}) to binary chalcogenides, we HT compute 243 semiconductors and screen 50 promising thermoelectric materials. For these theoretically determined compounds, we successfully predict some previously experimentally and theoretically investigated promising thermoelectric materials. Additionally, 9 p-type and 14 n-type previously unreported binary chalcogenides are also predicted as promising thermoelectric materials. Our work provides not only new thermoelectric candidates with perfect crystalline structure for the future investigations, but also reliable descriptors to HT screen high performance thermoelectric materials.
Usually microscopic electrostatic field around charged impurity ions is neglected when the ionization energy is concerned. The ionization energy is considered to be equal to that of a lonely impurity atom. Here the energy of the electrostatic field around charged impurity ions in semiconductor is taken into account. It is shown that the energy of this field contributes to decrease in the effective ionization energy. At high enough current carriers concentration the effective ionization energy becomes zero.
We report $^{59}$Co, $^{93}$Nb, and $^{121}$Sb nuclear magnetic resonance (NMR) measurements combined with density functional theory (DFT) calculations on a series of half-Heusler semiconductors, including NbCoSn, ZrCoSb, TaFeSb and NbFeSb, to better understand their electronic properties and general composition-dependent trends. These materials are of interest as potentially high efficiency thermoelectric materials. Compared to the other materials, we find that ZrCoSb tends to have a relatively large amount of local disorder, apparently antisite defects. This contributes to a small excitation gap corresponding to an impurity band near the band edge. In NbCoSn and TaFeSb, Curie-Weiss-type behavior is revealed, which indicates a small density of interacting paramagnetic defects. Very large paramagnetic chemical shifts are observed associated with a Van Vleck mechanism due to closely spaced $d$ bands splitting between the conduction and valence bands. Meanwhile, DFT methods were generally successful in reproducing the chemical shift trend for these half-Heusler materials, and we identify an enhancement of the larger-magnitude shifts, which we connect to electron interaction effects. The general trend is connected to changes in $d$-electron hybridization across the series.
Whether porosity can effectively improve thermoelectric performance is still an open question. Herein we report that thermoelectric performance can be significantly enhanced by creating porosity in n-type Mg3.225Mn0.025Sb1.5Bi0.49Te0.01, with a ZT of ~0.9 at 323 K and ~1.6 at 723 K, making the average ZT much higher for better performance. The large improvement at room temperature is significant considering that such a ZT value is comparable to the best ZT at this temperature in n-type Bi2Te3. The enhancement was mainly from the improved electrical mobility and multi-scale phonon scattering, particularly from the well-dispersed bismuth nano-precipitates in the porous structure. We further extend this approach to other thermoelectric materials such as half-Heuslers Nb0.56V0.24Ti0.2FeSb and Hf0.25Zr0.75NiSn0.99Sb0.01 and Bi0.5Sb1.5Te3 showing similar improvements, further advancing thermoelectric materials for applications.
The transverse thermoelectric effect refers to the conversion of a temperature gradient into a transverse charge current, or vice versa, which appears in a conductor under a magnetic field or in a magnetic material with spontaneous magnetization. Among such phenomena, the anomalous Nernst effect in magnetic materials has been receiving increased attention from the viewpoints of fundamental physics and thermoelectric applications owing to the rapid development of spin caloritronics and topological materials science. In this research trend, a conceptually different transverse thermoelectric conversion phenomenon appearing in thermoelectric/magnetic hybrid materials has been demonstrated, enabling the generation of a large transverse thermopower. Here, we review the recent progress in fundamental and applied studies on the transverse thermoelectric generation using magnetic materials. We anticipate that this perspective will further stimulate research activities on the transverse thermoelectric generation and lead to the development of next-generation thermal energy harvesting and heat-flux sensing technologies.
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