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Register a new userManifestations of the electron-phonon interaction range in angle resolved photoemission spectra
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Numerous angle resolved photoemission spectroscopy (ARPES) studies of a wide class of low-density metallic systems, ranging from doped transition metal oxides to quasi two-dimensional interfaces between insulators, exhibit phonon sidebands below the quasi-particle peak as a unique hallmark of polaronic correlations. Here, we single out properties of ARPES spectra that can provide a robust estimate of the effective range (screening length) of the electron-phonon interaction, regardless of the limited experimental resolution, dimensionality and particular features of the electronic structure, facilitating a general methodology for an analysis of a whole class of materials.
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We have studied the O 2p valence-band structure of Nb-doped SrTiO3, in which a dilute concentration of electrons are doped into the d0 band insulator, by angle-resolved photoemission spectroscopy (ARPES) measurements. We found that ARPES spectra at the valence band maxima at the M [k = (pi/a, pi/a, 0)]and R [k = (pi/a, pi/a, pi/a)] points start from ~ 3.3 eV below the Fermi level (EF), consistent with the indirect band gap of 3.3 eV and the EF position at the bottom of the conduction band. The peak position of the ARPES spectra were, however, shifted toward higher binding energies by ~ 500 meV from the 3.3 eV threshold. Because the bands at M and R have pure O 2p character, we attribute this ~ 500 meV shift to strong coupling of the oxygen p hole with optical phonons in analogy with the peak shifts observed for d-electron photoemission spectra in various transition-metal oxides.
We present an investigation on electronic structure of 1T-TiTe2 material via high-resolution angle-resolved photoemission spectroscopy (ARPES), utilizing tunable photon energy excitations. The typical semimetal-like electronic structure is observed and examined, where multiple hole pockets related to Te 5p bands and one electron pockets related to Ti 3d band are populated. The obtained results reveals i) a pronounced three-dimensional (3D) electronic structure of 1T-TiTe2 with typical semi-metallic features, for both the Ti 3d and the Te 5p states; ii) multiple Fermi surface (FS) sheets and complex band structure; and iii) an obvious kink in dispersion at an energy of about 18 meV below the Fermi energy, the first experimental observation of a kink structure in 1T-TiTe2, which may originate from electron-phonon coupling. These important and significant findings can help us to gain an in-depth understanding of the 3D electronic structure of semimetallic 1T- TiTe2.
High resolution laser-based angle-resolved photoemission measurements have been carried out on Sb(111) single crystal. Two kinds of Fermi surface sheets are observed that are derived from the topological surface states: one small hexagonal electron-like Fermi pocket around $Gamma$ point and the other six elongated lobes of hole-like Fermi pockets around the electron pocket. Clear Rashba-type band splitting due to the strong spin-orbit coupling is observed that is anisotropic in the momentum space. Our super-high-resolution ARPES measurements reveal no obvious kink in the surface band dispersions indicating a weak electron-phonon interaction in the surface states. In particular, the electron scattering rate for these topological surface states is nearly a constant over a large energy window near the Fermi level that is unusual in terms of the conventional picture.
Lattice contribution to the electronic self-energy in complex correlated oxides is a fascinating subject that has lately stimulated lively discussions. Expectations of electron-phonon self-energy effects for simpler materials, such as Pd and Al, have
resulted in several misconceptions in strongly correlated oxides. Here we analyze a number of arguments claiming that phonons cannot be the origin of certain self-energy effects seen in high-$T_c$ cuprate superconductors via angle resolved photoemission experiments (ARPES), including the temperature dependence, doping dependence of the renormalization effects, the inter-band scattering in the bilayer systems, and impurity substitution. We show that in light of experimental evidences and detailed simulations, these arguments are not well founded.
We present a numerical study of the isotope effect on the angle resolved photoemission spectra (ARPES) in the undoped cuprates. By the systematic-error-free Diagrammatic Monte Carlo method, the Lehman spectral function of a single hole in the ttt-J model in the regime of intermediate and strong couplings to optical phonons is calculated for normal and isotope substituted systems. We found that the isotope effect is strongly energy-momentum dependent, and is anomalously enhanced in the intermediate coupling regime while it approaches to that of the localized hole model in the strong coupling regime. We predict the strengths of effect as well as the fine details of the ARPES lineshape change. Implications to the doped case are also discussed.
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