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Register a new userExploiting Oxide Based Resistive RAM Variability for Bayesian Neural Network Hardware Design
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Added by
Abhronil Sengupta
Publication date
2019
fields
Informatics Engineering
and research's language is
English
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Uncertainty plays a key role in real-time machine learning. As a significant shift from standard deep networks, which does not consider any uncertainty formulation during its training or inference, Bayesian deep networks are being currently investigated where the network is envisaged as an ensemble of plausible models learnt by the Bayes formulation in response to uncertainties in sensory data. Bayesian deep networks consider each synaptic weight as a sample drawn from a probability distribution with learnt mean and variance. This paper elaborates on a hardware design that exploits cycle-to-cycle variability of oxide based Resistive Random Access Memories (RRAMs) as a means to realize such a probabilistic sampling function, instead of viewing it as a disadvantage.
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A resistive memory device-based computing architecture is one of the promising platforms for energy-efficient Deep Neural Network (DNN) training accelerators. The key technical challenge in realizing such accelerators is to accumulate the gradient information without a bias. Unlike the digital numbers in software which can be assigned and accessed with desired accuracy, numbers stored in resistive memory devices can only be manipulated following the physics of the device, which can significantly limit the training performance. Therefore, additional techniques and algorithm-level remedies are required to achieve the best possible performance in resistive memory device-based accelerators. In this paper, we analyze asymmetric conductance modulation characteristics in RRAM by Soft-bound synapse model and present an in-depth analysis on the relationship between device characteristics and DNN model accuracy using a 3-layer DNN trained on the MNIST dataset. We show that the imbalance between up and down update leads to a poor network performance. We introduce a concept of symmetry point and propose a zero-shifting technique which can compensate imbalance by programming the reference device and changing the zero value point of the weight. By using this zero-shifting method, we show that network performance dramatically improves for imbalanced synapse devices.
Resistive random access memories (RRAM) are novel nonvolatile memory technologies, which can be embedded at the core of CMOS, and which could be ideal for the in-memory implementation of deep neural networks. A particularly exciting vision is using them for implementing Binarized Neural Networks (BNNs), a class of deep neural networks with a highly reduced memory footprint. The challenge of resistive memory, however, is that they are prone to device variation, which can lead to bit errors. In this work we show that BNNs can tolerate these bit errors to an outstanding level, through simulations of networks on the MNIST and CIFAR10 tasks. If a standard BNN is used, up to 10^-4 bit error rate can be tolerated with little impact on recognition performance on both MNIST and CIFAR10. We then show that by adapting the training procedure to the fact that the BNN will be operated on error-prone hardware, this tolerance can be extended to a bit error rate of 4x10^-2. The requirements for RRAM are therefore a lot less stringent for BNNs than more traditional applications. We show, based on experimental measurements on a RRAM HfO2 technology, that this result can allow reduce RRAM programming energy by a factor 30.
The design of systems implementing low precision neural networks with emerging memories such as resistive random access memory (RRAM) is a major lead for reducing the energy consumption of artificial intelligence (AI). Multiple works have for example proposed in-memory architectures to implement low power binarized neural networks. These simple neural networks, where synaptic weights and neuronal activations assume binary values, can indeed approach state-of-the-art performance on vision tasks. In this work, we revisit one of these architectures where synapses are implemented in a differential fashion to reduce bit errors, and synaptic weights are read using precharge sense amplifiers. Based on experimental measurements on a hybrid 130 nm CMOS/RRAM chip and on circuit simulation, we show that the same memory array architecture can be used to implement ternary weights instead of binary weights, and that this technique is particularly appropriate if the sense amplifier is operated in near-threshold regime. We also show based on neural network simulation on the CIFAR-10 image recognition task that going from binary to ternary neural networks significantly increases neural network performance. These results highlight that AI circuits function may sometimes be revisited when operated in low power regimes.
One of the most exciting applications of Spin Torque Magnetoresistive Random Access Memory (ST-MRAM) is the in-memory implementation of deep neural networks, which could allow improving the energy efficiency of Artificial Intelligence by orders of magnitude with regards to its implementation on computers and graphics cards. In particular, ST-MRAM could be ideal for implementing Binarized Neural Networks (BNNs), a type of deep neural networks discovered in 2016, which can achieve state-of-the-art performance with a highly reduced memory footprint with regards to conventional artificial intelligence approaches. The challenge of ST-MRAM, however, is that it is prone to write errors and usually requires the use of error correction. In this work, we show that these bit errors can be tolerated by BNNs to an outstanding level, based on examples of image recognition tasks (MNIST, CIFAR-10 and ImageNet): bit error rates of ST-MRAM up to 0.1% have little impact on recognition accuracy. The requirements for ST-MRAM are therefore considerably relaxed for BNNs with regards to traditional applications. By consequence, we show that for BNNs, ST-MRAMs can be programmed with weak (low-energy) programming conditions, without error correcting codes. We show that this result can allow the use of low energy and low area ST-MRAM cells, and show that the energy savings at the system level can reach a factor two.
As cost and performance benefits associated with Moores Law scaling slow, researchers are studying alternative architectures (e.g., based on analog and/or spiking circuits) and/or computational models (e.g., convolutional and recurrent neural networks) to perform application-level tasks faster, more energy efficiently, and/or more accurately. We investigate cellular neural network (CeNN)-based co-processors at the application-level for these metrics. While it is well-known that CeNNs can be well-suited for spatio-temporal information processing, few (if any) studies have quantified the energy/delay/accuracy of a CeNN-friendly algorithm and compared the CeNN-based approach to the best von Neumann algorithm at the application level. We present an evaluation framework for such studies. As a case study, a CeNN-friendly target-tracking algorithm was developed and mapped to an array architecture developed in conjunction with the algorithm. We compare the energy, delay, and accuracy of our architecture/algorithm (assuming all overheads) to the most accurate von Neumann algorithm (Struck). Von Neumann CPU data is measured on an Intel i5 chip. The CeNN approach is capable of matching the accuracy of Struck, and can offer approximately 1000x improvements in energy-delay product.
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