Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userTopological flat bands without magic angles in massive twisted bilayer graphenes
73
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Twisted bilayer graphene (TBG) hosts nearly flat bands with narrow bandwidths of a few meV at certain {em magic} twist angles. Here we show that in twisted gapped Dirac material bilayers, or massive twisted bilayer graphenes (MTBG), isolated nearly flat bands below a threshold bandwidth $W_c$ are expected for continuous small twist angles up to a critical $theta_c$ depending on the flatness of the original bands and the interlayer coupling strength. Narrow bandwidths of $W lesssim $30 meV are expected for $theta lesssim 3^{circ} $ for twisted Dirac materials with intrinsic gaps of $sim 2$ eV that finds realization in monolayers of gapped transition metal dichalcogenides (TMDC), silicon carbide (SiC) among others, and even narrower bandwidths in hexagonal boron nitride (BN) whose gaps are $sim 5$ eV, while twisted graphene systems with smaller gaps of a few tens of meV, e.g. due to alignment with hexagonal boron nitride, show vestiges of the magic angles behavior in the bandwidth evolution. The phase diagram of finite valley Chern numbers of the isolated moire bands expands with increasing difference between the sublattice selective interlayer tunneling parameters. The valley contrasting circular dichroism for interband optical transitions is constructive near $0^{circ}$ and destructive near $60^{circ}$ alignments and can be tuned through electric field and gate driven polarization of the mini-valleys. Combining massive Dirac materials with various intrinsic gaps, Fermi velocities, interlayer tunneling strengths suggests optimistic prospects of increasing $theta_c$ and achieving correlated states with large $U/W$ effective interaction versus bandwidth ratios.
rate research
Read More
Magic-angle twisted bilayer graphene (MA-TBG) exhibits intriguing quantum phase transitions triggered by enhanced electron-electron interactions when its flat-bands are partially filled. However, the phases themselves and their connection to the putative non-trivial topology of the flat bands are largely unexplored. Here we report transport measurements revealing a succession of doping-induced Lifshitz transitions that are accompanied by van Hove singularities (VHS) which facilitate the emergence of correlation-induced gaps and topologically non-trivial sub-bands. In the presence of a magnetic field, well quantized Hall plateaus at filling of 1, 2, 3 carriers per moire-cell reveal the sub-band topology and signal the emergence of Chern insulators with Chern-numbers, ! = !, !, !, respectively. Surprisingly, for magnetic fields exceeding 5T we observe a VHS at a filling of 3.5, suggesting the possibility of a fractional Chern insulator. This VHS is accompanied by a crossover from low-temperature metallic, to high-temperature insulating behavior, characteristic of entropically driven Pomeranchuk-like transitions,
Graphene bilayers exhibit zero-energy flat bands at a discrete series of magic twist angles. In the absence of intra-sublattice inter-layer hopping, zero-energy states satisfy a Dirac equation with a non-abelian SU(2) gauge potential that cannot be diagonalized globally. We develop a semiclassical WKB approximation scheme for this Dirac equation by introducing a dimensionless Plancks constant proportional to the twist angle, solving the linearized Dirac equation around AB and BA turning points, and connecting Airy function solutions via bulk WKB wavefunctions. We find zero energy solutions at a discrete set of values of the dimensionless Plancks constant, which we obtain analytically. Our analytic flat band twist angles correspond closely to those determined numerically in previous work.
We investigate the band structure of twisted monolayer-bilayer graphene (tMBG), or twisted graphene on bilayer graphene (tGBG), as a function of twist angles and perpendicular electric fields in search of optimum conditions for achieving isolated nearly flat bands. Narrow bandwidths comparable or smaller than the effective Coulomb energies satisfying $U_{textrm{eff}} /W gtrsim 1$ are expected for twist angles in the range of $0.3^{circ} sim 1.5^{circ}$, more specifically in islands around $theta sim 0.5^{circ}, , 0.85^{circ}, ,1.3^{circ}$ for appropriate perpendicular electric field magnitudes and directions. The valley Chern numbers of the electron-hole asymmetric bands depend intrinsically on the details of the hopping terms in the bilayer graphene, and extrinsically on factors like electric fields or average staggered potentials in the graphene layer aligned with the contacting hexagonal boron nitride substrate. This tunability of the band isolation, bandwidth, and valley Chern numbers makes of tMBG a more versatile system than twisted bilayer graphene for finding nearly flat bands prone to strong correlations.
The interplay between interlayer van der Waals interaction and intralayer lattice distortion can lead to structural reconstruction in slightly twisted bilayer graphene (TBG) with the twist angle being smaller than a characteristic angle {theta}c. Experimentally, the {theta}c is demonstrated to be very close to the magic angle ({theta} ~ 1.05{deg}). In this work, we address the transition between reconstructed and unreconstructed structures of the TBG across the magic angle by using scanning tunnelling microscopy (STM). Our experiment demonstrates that both the two structures are stable in the TBG around the magic angle. By applying a STM tip pulse, we show that the two structures can be switched to each other and the bandwidth of the flat bands, which plays a vital role in the emergent strongly correlated states in the magic-angle TBG, can be tuned. The observed tunable lattice reconstruction and bandwidth of the flat bands provide an extra control knob to manipulate the exotic electronic states of the TBG near the magic angle.
The charge susceptibility of twisted bilayer graphene is investigated in the Dirac cone, respectively random-phase approximation. For small enough twist angles $thetalesssim 2^circ$ we find weakly Landau damped interband plasmons, i.~e., collective excitonic modes which exist in the undoped material, with an almost constant energy dispersion. In this regime, the loss function can be described as a Fano resonance and we argue that these excitations arise from the interaction of quasi-localised states with the incident light field. These predictions can be tested by nano-infrared imaging and possible applications include a perfect lens without the need of left-handed materials.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
